invert gate 中文意思是什麼
invert gate
解釋
反相門-
This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type.
這一電壓在柵極氧化物層上產生一個電場,它導致毗鄰的P型襯底轉變成N型。 -
In this paper, a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )
本文採用最新的逆變思想與新型的開關器件?絕緣柵型雙極晶體管( igbt ) ,研製出了移相式pwm軟開關高壓逆變電源。逆變技術發展至今,已經逐漸向大功率方向發展。 -
This paper has designed a inverter power supply of volume 2kva, working frequency 20khz., based on that has analyzed the characteristic of igbt ( insulated gate bipolar transistor ). it was provided the working theory of dc voltage circuit and bridge type invert circuit
本文在分析了igbt (絕緣柵雙極晶體管)特性的基礎上,設計了一臺容量為2kva 、頻率為20khz的高頻逆變電源。 -
This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n - type
這一電壓在柵極氧化物層上產生一個電場,它導致毗鄰的p型襯底轉變成n型。
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