ion beam etching 中文意思是什麼

ion beam etching 解釋
離子束腐蝕
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • beam : n 1 梁，棟梁，桁條；（船的）橫梁。2 船幅；（動物、人的）體幅。3 （秤）桿，杠桿，（織機的）卷軸，...
  • etching : n. 1. 蝕刻法；蝕刻（銅）版畫；蝕鏤術。2. 蝕刻畫，蝕刻版，蝕刻版印刷品。
  1. Lin h, li l and zeng l., " in - situ end - point detection during ion - beam etching of multilayer dielectric gratings ", chin. opt. lett., 3 ( 2 ), 63 ( 2005 )

    林華， "介質膜光柵:光刻膠掩模占寬比和離子束刻蝕槽深的監控" ，博士論文，導師:李立峰（ 2006 ）
  2. Influence of ion - beam etching incidence angle on slope of pattern sidewall

    光線斜入射對光柵常數測量的影響
  3. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  4. The submicron ring, laser beam shaper and fresnel lens is fabricated by ion etching according to the selected parameter

    依照這些參數刻蝕出了高質量的特徵尺寸為亞微米的環、光束整形元件和菲涅耳透鏡等元件。
  5. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  6. Generic specification of ion beam etching system

    離子束蝕刻機通用技術條件
  7. Reactive ion beam etching system ribe system

    反應性離子束蝕刻系統
  8. Lin h, li l and zeng l., " in - situ monitoring during ion - beam etching of multilayer dielectric gratings : simulation and experiment ", holography, diffractive optics, and applications ii, spie, 5636, 143 ( 2004 )

    林華，李立峰，曾理江， "利用導波耦合角度實時控制光刻膠光柵掩模的占寬比" ，光學學報， 26 ， 767 ? 772 （ 2006 ）
  9. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  10. The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward

    綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。
  11. The diffraction efficiency of phase mask is discussed by using rigorous coupled - wave theory. the results are useful for fabrication of phase mask. and the diffraction efficiency of linearly chirped phase mask is discussed, it presents require of ion - beam etching

    利用嚴格耦合波理論對光纖光柵相位掩模的衍射效率問題進行了深入研究，以達到指導光纖光柵相位掩模實際製作的目的，並且研究了啁啾掩模的衍射效率問題，為線性啁啾光刻膠掩模的離子束刻蝕提出了要求。
  12. Ion beam etching system

    離子束蝕刻系統
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