ion deposition 中文意思是什麼

ion deposition 解釋
離子沉積
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  1. Ni ion beam enhanced deposition of nitride film

    鎳離子束動態增強沉積多元氮化物膜
  2. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等離子體化學氣相沉積（ pecvd ）和等離體浸沒離子注入（ piii ）技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。
  3. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  4. Diamond - like carbon gradient film on ti6a14v alloy substrate have been prepared by means of plasma source ion implanted - ion beam enhanced deposition ( psii - ibed ). for potential applications as artificial joint materials and artificial cardiac valve materials, its trobological performance and hemocompatibility has also been evaluated in the present ph. d. thesis

    本研究採用等離子源離子注入?離子束增強沉積技術（ psii - ibed ）制備了鈦合金基類金剛石梯度薄膜材料，對類金剛石梯度薄膜這一新型人工關節材料和人工心臟瓣膜材料的生物摩擦學性能和血液相容性進行了研究和評價，研究了摩擦磨損對材料血液相容性的影響。
  5. Metal plasma immersion dynamic ion beam enhanced deposition

    金屬等離子體浸沒動態離子束增強沉積
  6. The mechanisms of diamond nucleation and growth are discussed, and it is believed that the continued ion bombardment during the deposition process is a key factor for the growth of nanocrystalline diamond film using ch4 and h2

    探討了金剛石的核化機制和納米金剛石的形成機制，認為沉積過程中的持續的離子轟擊是ch _ 4和h _ 2體系制備納米金剛石薄膜的關鍵。
  7. ( 5 ) cdse nano - wire arrays / aam composite, cdse nano - wire arrays and cdse nano - wire were prepared by template - electro - deposition in seleneous acid ( hasech ) solution and selenosulfite ion ( sesoa2 " ) solution. then the image, composition and structure of those products were investigated by sem, tem, eds, xps and x - ray diffraction ( xrd )

    （ 5 ）分別以hzseo3和seso32一為硒源，用模板一電沉積法在納米孔陣列aam模板中制備出cdse納米線陣列/ aam復合物，然後溶解掉納米孔陣列aam ，寧} ） ij得了cdse納米線陣列和cdse納米線。
  8. The results indicate that the optical performance and coating quality have been improved drastically by using ion - assisted deposition technology in the vacuum deposition, in comparison with the traditional thermal vapor deposition

    結果表明，與傳統的熱蒸發鍍膜工藝相比，在真空沉積過程牛採用離子束輔助沉積技術，可以大大提高膜層的光學特性及膜層品質。
  9. Property comparison of optical thin films prepared by e - beam, ion assisted deposition and ion beam sputtering

    離子輔助和離子束濺射三種工藝對光學薄膜性能的影響
  10. It is known that high intense pulsed ion beams ( hipib ) have a high viability to be used as an efficient energetic source for rapid film deposition and direct surface modification. up to now, however, there is still lack of a systematic work to reveal the influence of hipib on the film deposition and material modification although there are lots of papers have been published in the field. in the present work, these two practical applications of hipib were all investigated in detail

    根據強流脈沖離子束（ highintensepulseionbeam ? hipib ）技術具有快速沉積薄膜和材料表面輻照處理改性的特點，而目前對其薄膜沉積和材料輻照處理缺乏系統研究，本論文的工作分為兩部分，其一是類金剛石薄膜（ diamondlikecarbon ? dlc ）沉積，其二是高速鋼直接輻照處理表面改性。
  11. Abstract : under the laser irradiation, the characteristics of the metal ion in the deposition processes are described in the paper

    文摘:介紹在鍍液中，在激光光束作用下，金屬離子沉積過程的一些特點，並對其原因進行了簡單的探討。
  12. Research on deposition diamond - like carbon films with end - hall plasma ion source

    端部霍爾等離子體源沉積類金剛石膜的研究
  13. In view of its virtue of high degree of electron and ion generations, the microwave electron cyclotron resonance ( mwecr ) cvd method is expected to deposit device quality a - si : h at high deposition rate

    鑒于微波電子迴旋共振化學氣相沉積（ mwecrcvd ）系統具有電子和離子產生率高等優點，人們期望它能在較高的沉積速率下獲得器件級質量的a - si ： h薄膜。
  14. The energy calibration is around 1. 1 mev per channel for oxygen ion and iron ions when energy deposition is less than 50 mev in each detector

    從重離子的能譜中我們可以看到，在半導體探測器中的能量沉積大於50mev時，將引起電荷靈敏前置放大器飽和。
  15. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  16. ( 4 ) cdse thin films were respectively fabricated by electro - deposition in seleneous acid ( h ^ seos ) solution and selenosulfite ion ( sesos " ) solution

    （ 4 ）分別以hzseo3和seso32一為硒源，用電沉積法制備了edse薄膜。
  17. Centering at soft x - ray multilayer uniformity technology, we introduce general situation of multilayer, design of multilayer structure, simulation calculation, ion - beam sputtering deposition and evaluation of samples. above all, we carry out study of improving uniformity of period thickness spatial distribution, and develop correction mask for controlling period thickness. as a result, we improve uniformity from 4. 5 % to 2. 0 %, the error of period thickness on ( 130nm field is controlled within 0. 18nm, and the reflectivity reach 35 % at center wavelength 17. 1nm

    特別地，我們設計並應用膜厚擋板補償技術控制多層膜的膜厚分佈，將膜厚分佈非均勻性從4 . 5減小到2 ，周期厚度絕對差值控制在0 . 18nm以內，並且制備得實際多層膜樣品在中心波長17 . 1nm處實測反射率達到35 ，達到實用水平。
  18. The synthesis process of single - wall carbon nanotubes ( swnts ) by catalytically chemical vapor deposition ( ccvd ) was investigated and the product was characterized with transmission electron microscopy ( tem ), electron diffraction ( ed ), electron dispersive spectra ( eds ) and raman scattering spectra etc. pyrolysis of methane over solid catalysts prepared with impregnation, ion - adsorption precipitation, and sol - gel technique can all lead to the growth of swnts

    本文研究了單壁納米碳管的化學氣相沉積法（ cvd ）制備工藝，並運用透射電子顯微鏡（ tem ） 、 x - ray能譜（ eds ）與喇曼（ raman ）光譜等分析手段，對產物及催化劑進行了表徵。採用浸漬法、吸附沉澱法與溶膠凝膠法等制備了催化劑，併合成了單壁納米碳管。
  19. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  20. This paper mainly discusses the performance specification of plasma source ( gis ), technology and quality of tio2 and sio2 coatings and the technology for large antireflection coatings deposited with plasma - iad. the research shows that the index of optical coating increases remarkably by using plasma ion assisted deposition and approach to the massive material further, the coating structure is more compacted than the one obtained through conventional deposition method and the adhesive power is high as well

    研究了用於輔助鍍膜的等離子體源（ gis ）的結構原理及性能指標，並從光學特性、顯微特性和機械特性三方面著手，研究了使用等離子體源所做的單層tio _ 2膜和單層sio _ 2膜的成膜工藝與質量。
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