ion dosage 中文意思是什麼
ion dosage
解釋
離子劑量-
The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists
本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。 -
In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers
本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。 -
Nowadays, separation by implantation of oxygen ( simox ) and smart - cut are two major methods to commercially supply soi wafers, but these soi wafers are much expensive than si wafers due to the long time ion implantation required for the high dosage ( 1017 - 10l8cm - 2 ) by conventional beam - line ion implanters, which, to some extent, embarrasses its widespread adoption in mainstream microelectronic products
目前制約soi技術商業應用的重要因素之一是soi圓片過低的產量和過高的價格，主要原因是使用傳統線掃描式離子注入機需要很長時間才能達到所需的注入劑量（ 10 ~ （ 17 ） 10 ~ （ 18 ） cm ~ （ - 2 ） ） 。
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