ion energy 中文意思是什麼

ion energy 解釋
離子能量
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • energy : n. 1. 干勁，活力。2. （語言、行為等的）生動。3. 〈pl. 〉 （個人的）精力；能力。4. 【物理學】能，能量。
  1. Numerical simulation of the beam optics characteristics in a high energy and high current negative ion beam system

    高能強流負離子束系統束光學特性的數值模擬
  2. Ion cannon shots vaporise the object struck magnifying the energy discharge. armour is of no value against them. they function as lances in all respects

    離子炮射擊能使目標蒸發從而增大能量放射。裝甲對它們完全無效，在各方面，它們表現的都和騎槍一樣。
  3. ( 2 ) the emission spectra of laser ablation metal copper plasma were measured. the detailed mechanism of plume emission of cu plasma was qualitatively explained using a simple model based on excitation of atom and ion in plume arising from inelastic collision between the elemental species and electron with high kinetic energy. under the local thermal equilibrium model, the electronic temperature of copper plasma was deduced to be in the 104 scale by its emission lines

    （ 2 ） cu等離子體光譜：在420 570nm波長范圍內觀測了激光燒蝕cu等離子體的光譜和各發射譜線在等離子體中的空間分佈；比較了激光能量對cu等離子體發射光譜、電子溫度的影響；用局部熱力學平衡（ lte ）近似，測得cu等離子體的電子溫度為104k數量級；在不同背景氣壓下，觀測了激光燒蝕cu等離子體光譜的空間分佈。
  4. Modification of polyaniline thin films by low energy ion implantation

    低能離子注入對聚苯胺薄膜的改性研究
  5. ( c ) the total energy of manganate - oxides materials decreases after intercalation lithium. the electrovalent bond weakens and the covalent bond strengthen between manganese and oxygen due to ion polarization effect, which makes the spinel structure more stable

    （ 3 ）對于錳系材料嵌鋰后，體系總能量降低；鋰離子的靜電作用和極化作用，使錳氧之間的離子鍵成分減小，共價鍵成分增加，整個尖晶石骨架結構更加穩定。
  6. The thesis includes three parts : firstly, previous study and latest advance of molecular motor in biology are outlined, including myosin ' s and kinesin ' s construction and function, the latest advance of molecular motor in constructional biology ; secondly, the latest advance of molecular motor in physics is reviewed, including the general view of brownian motor and two examples of molecular motor, one being related to two kinds of flashing potention energy, the other being related to electronical bipole ; and finally, the model on unidirectional motion of molecular motor is in detail come up with, and especially, the interact ion between two heads is taken into account, followed by the construction of langevin equation and fokker - planck equation involved in the model. by using solutions of fokker - planck equation, unidirectional motion mechanism of molecular motor is analyzed

    本文內容包括：首先綜述生物學領域分子馬達研究的最新進展，內容安排為：肌球蛋白的結構和功能，驅動蛋白的結構和功能，肌球蛋白和驅動蛋白定向運動機制的結構生物學方面的最新進展；其次綜述並分析了當前研究分子馬達定向運動機制的幾種物理模型，內容安排為：分子馬達運動的基本觀點和建構模型的一般方法，勢壘的兩態漲落誘導的分子馬達運動模型，分子馬達定向運動的偶極子模型；最後討論雙頭相互作用的分子馬達模型，內容安排為：先詳細論述模型的構建，再建立langevin方程和fokker - planck方程，接著用差分的方法求解出fokker - planck方程的解，然後分析和研究分子馬達定向運動的機制。
  7. One of the focuses in investigating the high energy heavy - ion collisions is to explore the existence and the properties of quark - gluon - plasraa ( qgp ) which is predicted by the strong interaction theory - quantum chromodynamics ( qcd )

    探尋強相互作作理論?量子色動力學（ qcd ）所預言的夸克膠子等離子體（ qgp ）的信號及相變性質（ ? ）直是高能核?核碰撞實驗的重要目標之一。
  8. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  9. Scattering ion energy ratio

    散射離子的能量比值
  10. Scattering ion energy

    散射離子能量
  11. The energy loss method is depended on the resolution of the detector and the ion energy

    E - e望遠鏡方法對同量異位素的分辨本領取決于e和e探測器的能量分辨本領和離子所帶能量的高低。
  12. With increasing implantation dose, the thickness of the box layer increases while that of the si over - layer decreases. the thickness of the si over - layer is dependent of the ion energy

    通過調節注入能量可獲得所需要的不同表層硅厚度的soi結構材料，但為獲得高質量的soi材料，注入能量需要和注入劑量有合適的匹配。
  13. It has been shown from numerical results that as increasing the discharge pressure, bimodal - peaks distributions for the ion energy become gradually single - peak distributions and low - energy ions increase

    數值結果表明：隨著放電氣壓增加，離子在基板上的能量分佈逐漸地由雙峰分佈變成單峰分佈，而且低能離子的數目也逐漸地增加。
  14. In the present works, a self - consistent model describing the dynamics of radio - frequency ( rf ) sheath was established. the effects of collisions on the rf sheath dynamics, distributions of ion energy and angle incident on the substrate and the etching profiles were investigated numerically

    本文建立了一套自洽的碰撞射頻等離子體鞘層理論模型，系統地研究了碰撞效應對等離子體鞘層的物理特性、離子入射到基板上的能量分佈和角度分佈以及刻蝕剖面的影響。
  15. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  16. In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

    本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。
  17. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  18. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  19. In the hipib strengthening experiments, samples of high - speed steel ( w6mo5cr4v2 ) were irradiated by abstract hipib ( cn + = 30 %, h + = 70 %, ion energy 250 kev, ion current density 60 - 180a / cm2, pulse duration 80 - 100 ns ). microstructure investigation and properties characterization of the treated hss samples were carried out to investigate the effect of current density and pulse number of incident hipib on the surface modification treatment. the physical mechanism of the hipib - solid interaction was established based on the experiments

    在hipib轟擊材料表面方面，本文選擇成分由c ~ （ n + ） （ 30 ）和h ~ + （ 70 ）組成、加速電壓為250kv 、脈沖寬度為80 100ns的hipib對高速鋼（ w6mo5cr4v2 ）進行表面輻照處理，研究離子束流密度和脈沖次數對高速鋼微觀結構和宏觀性能的影響，探討了hipib與材料表面相互作用的物理機制。
  20. The experimental results show that the n contents in the multilayers are higher at the lower incidence ion energy and current. the n contents increase with the increasing of the substrate temperature. the n contents in the films also arose by using the assisted ion beam

    實驗結果表明：入射離子能量較低、束流較低時，制得薄膜的n含量較高；升高溫度能增加薄膜中的n含量；輔助離子束的使用同樣增加了薄膜中的n含量；獲得的cn _ x tin _ y薄膜的最高含n量為49 . 52at 。
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