ion implantation damage 中文意思是什麼
ion implantation damage
解釋
離子注入損傷- ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
- implantation : n. 1. 種植。2. 插入；灌輸，鼓吹。3. 【醫學】皮下注射。
- damage : n 1 損害，損傷；〈口語〉傷害，毀壞。2 〈口語〉費用，代價。3 〈pl 〉 【法律】 賠償損失；賠償金。vt...
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At first, we investigated the photoluminescence characterization of theion - implanted samples by spectroanalysis, found that the ion implantation would damage the crystal lattice structure and affect the optical radiation of characteristic. moreover, the crystal lattice structure will be restored after annealing, which can be determined by the change of fluorescence peak intensity and blue migration of wavelength
發現mn ~ +離子、 c離子的注入都會損傷樣品的晶格結構，從而影響樣品的發光特性，而退火處理對這些損傷有一定的修復作用，這可以從發光峰強度的變化及波長的藍移來判定。 -
Some previous experiments have showed that cavities had more efficient gettering than p - diffusion, mechanical damage and ion implantation. most of studies about cavities gettering are concentrated on the peculiarity of cavities gettering metal impurities intentionally into silicon wafer from the viewpoint of basic study. this technique especially applied to low - contamination process, how ever, has not been carefully studied, which should be important to the semiconductor manufacturing
而過去的工作多集中在從基礎研究的角度研究氦微孔對有意摻入金屬雜質的矽片的吸除特性，對無意引入的低濃度金屬雜質的器件吸雜效果的研究卻非常少，這方面的研究是氦微孔技術走向實際應用的必經之路。
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