ion plasma 中文意思是什麼

ion plasma 解釋
等離子區
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • plasma : n. 1. 【生理】血漿；淋巴液。2. 【生物學】原生質。3. （做藥膏用的）膏漿。4. 【礦物】半透明的綠玉髓。5. 【物理學】等離子（體）；等離子區。
  1. Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave

    摘要採用微波電子迴旋共振等離子體反應離子刻蝕（ ecr - rie ）裝置對氂牛毛纖維進行表面改性，從而改善氂牛毛的可紡性。
  2. This flyby was the first survey of the ion plasma of mercury ' s space environment

    這一飛，是第一次調查時的離子血漿中的水星的空間環境。
  3. ( 2 ) the emission spectra of laser ablation metal copper plasma were measured. the detailed mechanism of plume emission of cu plasma was qualitatively explained using a simple model based on excitation of atom and ion in plume arising from inelastic collision between the elemental species and electron with high kinetic energy. under the local thermal equilibrium model, the electronic temperature of copper plasma was deduced to be in the 104 scale by its emission lines

    （ 2 ） cu等離子體光譜：在420 570nm波長范圍內觀測了激光燒蝕cu等離子體的光譜和各發射譜線在等離子體中的空間分佈；比較了激光能量對cu等離子體發射光譜、電子溫度的影響；用局部熱力學平衡（ lte ）近似，測得cu等離子體的電子溫度為104k數量級；在不同背景氣壓下，觀測了激光燒蝕cu等離子體光譜的空間分佈。
  4. Plasma immersion ion implantation into insulating materials

    等離子體浸沒離子注入絕緣材料的研究
  5. In this paper, we focus on the following three topics : ( i ) density distribution of dusty plasma in the low - pressure collisionless positive column the radial density distributions of electron, ion and dust particle in the low - pressure collisionless positive column are investigated with a fluid theory and a self - consistent dust - charging model

    本文著重以下三個方面的研究： （ ）低氣壓無碰撞輝光放電正柱區塵埃等離子體密度徑向分佈本文採用流體模型和自洽的塵埃充電模型，研究了低氣壓無碰撞輝光放電正柱區的電子密度、離子密度和塵埃粒子密度的徑向分佈。
  6. Pvp polyethylene pyrrole alkane ketone whether one physiology have similar human plasma high polymer of albumen, the best one in the ion surface - active agent of right and wrong

    Pvp （聚乙烯吡咯烷酮）是一種生理學上類似人體血漿蛋白的高分子聚合物，是非離子表面活性劑中最好的一種。
  7. During ion source operating, alternating axial magnetic field and azimuthal electric field in discharge tube ionize hydrogen gas purified by hot palladium pipe, and form plasma, hi fifties year, research reports studied on rf ion source are numerous however most of them are concerned about application, and research reports relevant to discharge theory or experiment model are unfrequent

    離子源工作時，放電空間交變的軸向磁場和渦漩電場激發放電管中經鈀管純化后通入的氫氣電離，形成等離子體。 50多年來，關于高頻離子源的研究報告很多，但是，這些研究主要都集中在應用研究方面，有關高頻無極環形放電離子源的理論與實驗模型研究不是很多。
  8. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等離子體化學氣相沉積（ pecvd ）和等離體浸沒離子注入（ piii ）技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。
  9. Study on noncovalent binding between ketoprofen and plasma protein by electrospray ion trap mass spectrometry

    酮洛芬與血漿蛋白非共價結合的電噴霧質譜研究
  10. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  11. In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

    本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。
  12. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  13. Diamond - like carbon gradient film on ti6a14v alloy substrate have been prepared by means of plasma source ion implanted - ion beam enhanced deposition ( psii - ibed ). for potential applications as artificial joint materials and artificial cardiac valve materials, its trobological performance and hemocompatibility has also been evaluated in the present ph. d. thesis

    本研究採用等離子源離子注入?離子束增強沉積技術（ psii - ibed ）制備了鈦合金基類金剛石梯度薄膜材料，對類金剛石梯度薄膜這一新型人工關節材料和人工心臟瓣膜材料的生物摩擦學性能和血液相容性進行了研究和評價，研究了摩擦磨損對材料血液相容性的影響。
  14. For unmagnetized, relativistic and hot ion plasmas, the ion - acoustic waves can be described by the kadomtsev - petviashvili ( kp ) equation ( ( ut + auux + buxxx ) x + duyy = 0 ). it suggests that the nonlinear ion - acoustic solitary waves in a relativistic hot ion plasma are stable even there are some higher order transverse perturbations. there are only compressive solitary waves in the relativistic hot ion plasmas which has been vertified analytically

    在低階近似下，無磁場相對論熱離子等離子體可由kp方程（ （ u _ t + auu _ （ x ） + bu _ （ xxx ） _ x + cu _ （ yy ） = 0 ）來描述，相對論熱離子等離子中的非線性離子聲孤波在高階橫向擾動下是穩定的，且在相對論熱離子等離子體中僅存在壓縮型孤波
  15. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  16. The top plot depicts the low - energy plasma of solar wind origin, and the bottom plot shows heavy ion intensities associated with the planet

    頂部情節描寫低能離子的太陽風的原產地，以及底部圖謀表明重離子強度與星球。
  17. Plasma ion oscillation

    等離子體離子振蕩
  18. The effect of the dust charging process becomes significant when the charging time is longer than either the pulse period or the ion response time ( measured by the inverse of the ion plasma frequency )

    因為塵埃粒子的充電時間長于離子響應時間或者負脈沖時間，塵埃粒子的充電過程對鞘層的形成將有很大影響。
  19. The dispersion curves and simulated dispersion relationship of longitudinal waves without the langmuir wave, the ion sound wave and the ion plasma wave are obtained

    得到了除朗繆爾波、離子聲波和離子等離子體波外其它縱波的色散曲線和擬合色散關系。
  20. Ion plasma frequency

    離子等離子體頻率
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