ir annealing 中文意思是什麼
-
The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists
本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。 -
Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material
研究表明:電解液的配製過程中，氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響，其中溶液ph值是最主要的影響因素;在儀器的使用條件探索中，理論結合實驗確定了本電鍍液體系循環伏安電勢窗的理想范圍，並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物的共沉澱是目前研究熱點，在此選用與釕同一族的銥作為共沉澱元素，銥的加入會阻礙氧化物的沉積速度，銥的比例超過50 %會使沉積作用停止，但是二元氧化物的協同作用使沉積的活性物質比容量大大提高;一定溫度下退火后處理作用會使水合釕化物轉變成混合價態的氧化釕，從而提高活性物質的穩定性。 -
Ir spectrum analyses have demonstrated that the structure mode of the substoichiometric silicon - 53 - abstrct oxide films ( sio ~ ) can be described as a mixture of rmm and rbm x at relatively low annealing temperature. the reaction, si - si ~ o4 ~ - - - ~
進一步升高，由a工膜的xrd圖矛前人的實驗推車如t 800硅晶化自分急后增力，相應的a七減少， nc和a七。 -
After dipped in amino trimethylene phosphonic acid ( atmp ) solution, anodic oxide films are annealed in pipe stove. the influences of concentration and temperature of atmp solution and annealing temperature on rising time, withstanding voltage and specific capacitance of anodic oxide films are studied. after hydration, anodic oxide films treated with atmp or not are analyzed by ft - ir
2 .將化成箔在氨基三甲叉膦酸（ atmp ）溶液中浸漬，取出烘乾后再進行熱處理，研究了atmp溶液濃度、浸漬溫度和熱處理溫度對氧化膜升壓時間、比容、耐電壓的影響，找到其最佳耐水合處理工藝;採用ft - ir對水合作用后的atmp處理氧化膜和未經耐水合處理氧化膜進行了分析。 -
The optimum concentration and temperature of dtpmp solution and optimum annealing temperature are discussed. in addition, hydration resistant effect of anodic oxide films treated with adp, atmp and dtpmp respectively is discussed through ft - ir, xps, afm and i - v characteristics testing
探討了dtpmp溶液濃度、浸漬溫度和熱處理溫度對氧化膜升壓時間、比容、耐電壓的影響，並找到其最佳耐水合處理工藝;同時採用ft - ir 、 xps 、 afm和i - v特性測試對adp 、 atmp 、 dtpmp三種試劑對氧化膜的耐水合處理效果進行了對比研究。 -
The compositions and the configurations of the composite films were tested by means of ft - ir, xps and afm. the optimal procedure was obtained by studying the influences of the dipping time, and the annealing temperature on the capacitance increase percentage
藉助于ft - ir 、 xps 、 afm等分析手段對復合氧化膜的成分和結構進行了分析，並研究了sol - gel技術的主要工藝參數對鋁陽極氧化膜電性能的影響。 -
The condition of electrolyte preparation, the setup of instrument exporting cv voltage, the influence of co - deposition ir composition, the treatment of ta foil surface and annealing treatment of electrode are studied. the mechanism of ru compound deposition is discussed meantime
討論了電解液配製條件、儀器使用條件、共沉澱銥化物、鉭基體表面處理和電極片退火處理條件對產品性能的影響，並分析了沉積機理。
分享友人