junction frequency 中文意思是什麼
junction frequency
解釋
聚合頻率-
Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes
肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。 -
Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits
半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。 -
The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。 -
While simulating the resonant circuits, we finished a microstrip resonance, which has high q - factor and fits to design w - band low phase noise oscillators. select beam lead hyperabrupt junction varactor and gunn die made in china as vco ’ s frequency turning component and minus resistance
此外，文中還對w頻段微帶結構直流偏置網路、微帶波導過渡等外圍電路進行了模擬優化，設計方法和結論對毫米波微帶電路設計具有通用的參考價值。 -
And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown
而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。 -
Theoretical analysis and simulation results demonstrate that asymmetries in lower and upper sidebands and imd magnitude variation depending on envelope frequency and junction temperature can appear, these results are in accordance with measurement results, and show that electrical and thermal memory effects exist
理論分析和模擬結果表明功率放大器上下邊帶不平衡和互調失真幅度依賴于包絡頻率和結溫，結果和測量的結果是一致的，說明存在電和熱記憶效應。 -
The main works are as the follows. in view of the contradiction among frequency, output power and dissipation power, propose deep - trench junction termination structure filling with isolated materials and collector - combed ( base - combed ) structure
主要工作包括以下幾個方面：針對頻率與功率、功耗的矛盾，提出了絕緣深阱結終端結構和梳狀集電結（基區）結構。 -
Comparing with p - n junction, sbd is a majority carrier device. it has low break - over voltage, and can be used at high frequency
與p - n結相比，它是一種多子器件，具有正向導通電壓低，使用頻率高等特點。 -
This paper realized frequency modulation using the video signal to directly control the resonance loop ' s diode of the vco at the early stages, and then through using radio frequency bipolar junction transistor, designed a lc voltage controlled oscillator which was emulated by advance design system. in addition, it also implemented the design and debugged the hardware circuit
本文第一次實驗採用視頻信號直接控制vco諧振迴路變容二極體的方式實現頻率調制，並且利用射頻雙極性晶體管（ bjt ）設計了一種lc壓控振蕩器，通過ads軟體進行了參數模擬，最後進行了硬體電路的製作和調試。 -
There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication
目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。 -
It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects
Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。 -
Litter containers provided by the department can be found at almost every bus stop, major road junction, ferry concourse, transport interchange and mass transit railway kowloon canton railway exit in hong kong. they are emptied at frequency commensurate with usage. they range from four to eight times a day
本署在差不多每個巴士站主要路口渡輪碼頭大堂交通交匯處地下鐵路及九廣鐵路各站出口，都設有廢屑箱，清倒的次數視乎收集量而定，由每日四至八次不等。 -
Litter containers provided by the department can be found at almost every bus stop, major road junction, ferry concourse, transport interchange and mass transit railwaykowloon canton railway exit in hong kong. they are emptied at frequency commensurate with usage. they range from four to eight times a day
本署在差不多每個巴士站、主要路口、渡輪碼頭大堂、交通交匯處、地下鐵路及九廣鐵路各站出口，都設有廢屑箱，清倒的次數視乎收集量而定，由每日四至八次不等。
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