junction temperature 中文意思是什麼
junction temperature
解釋
結溫- junction : n. 1. 接合，連接，連絡。2. 接合點，交叉點，（河流的）匯合處，（鐵道的）聯軌點。3. 【電學】中繼線。4. 【物理學】接頭，結。
- temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
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We design and manufacture a complete line of high quality standard and custom temperature sensors including thermocouples, rtd s and thermowells as well as a wide selection of junction boxes, cable and harness assemblies. in 2004, sanjac is iso 9001 : 2000 and as9100a certified that reinforced our ability in providing excellent products for our customers
主要產品為熱電偶熱電阻隔爆耐磨普通特殊鎧裝熱電偶快速接頭表面用熱電偶熱電偶及熱電阻接線盒brskejt各種型號的溫度補償導線等，產品種類豐富種類全。 -
And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown
而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。 -
The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface
實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。 -
The test junction is usually embedded in the material whose temperature is to be measured.
測試結通常埋在待測溫度的物質中。 -
Theoretical analysis indicates, the two technology helps reduce the concentration of current, lower the peak junction - temperature, and effectively avoid the appearance of devices " breakdown caused by heat and current
理論分析表明：上述兩種技術，有利於減小電流集中現象，降低器件峰值結溫，避免熱擊穿和二次擊穿的發生。 -
Wrkd - jz type thermocouple on the wall of boiler takes 4 sheathed thermocouple as measuring element. the thermal junction is fastened in stainless steel gathering heat clump with different curved surface of bearing treble points welded or m8 screw fixed to measure surface temperature of the wall of boiler, furnace and other equipments. wrkd - hg surface sandwich thermocoupleon the wall of boiler is specialized in measuring surface temperature of round column
Wrkd - jz型鍋爐爐壁熱電偶採用4的鎧裝熱電偶做測溫元件，熱接點緊固在帶有不同曲面的不銹鋼，集熱塊上採用三點焊接或m8螺釘固定，用於鍋爐管壁，爐壁及其它設備的表面溫度。 -
Sheathed thermocouple as temperature sensor consist oftwo dissimilar and qualified conductor or semiconductor welded together at both ends one terminal as measaring junction, another as reference junction, temperature can be measured depend upon
由兩種不同但符合一定的導體或半導體熱電極，將其一端焊接作為測量端，另一端為參考端，利用兩端溫差與熱電 -
Experimental results show, with the not - uniform two - direction ballasting technology, the peak junction - temperature at the center of the chip can be lessened 7 - 10 surface temperature of the case can also reduce 3 - 7, and the heat - dissipating property of the power devices has distinct improvement
實驗結果表明：具有非均勻雙向鎮流電阻結構的雙極功率器件，其晶元中心峰值結溫ih了村技人學博士論文可降低7 10ac ，谷殼表面的溫度也可降低3 7c ，器件的敝熱特性明顯岱島。 -
Analysing the connection between soil temperature of the earth ' s surface and hereinafter 5cm, 10cm, 15cm, 20cm, 40cm and ground water depth, eliciting that temperature of soil underground 10 cm and ground water depth has junction. 3
分析了地表及地表以下5cm 、 10cm 、 15cm 、 20cm 、 40cm土壤溫度，與地下水埋深間的相關性，得到結論地表以下10層面的土壤溫度與地下水埋深相關性最大。 -
Microwave power dissipated in ta2n resistive film generates heat to raise the temperature of the hot junction above that of the cold junction, thereby producing a dc voltage across the thermocouple. we can measure microwave power through measuring this dc voltage
微波功率耗散在ta2n電阻上轉變成熱能使熱結溫度高於冷結，這樣冷熱結兩端就產生一個熱電勢，通過測量該熱電勢即可實現微波功率測量。 -
Bipolar transistors of the type of 3dd820 and 3dd15d ( with f2 metal - pack ) are taken as an example in the study to verify the method of controllable junction temperature
以3dd820 ， 3dd15d （ f2金屬封裝）雙極晶體管為實驗對象，對結溫可控的晶體管穩態工作壽命試驗方法進行了驗證。 -
To increase the accuracy of the test method, a steady - state operation life test method with additional measuring and strictly controlling transistor junction temperature, in the highest temperature range, is given
旨在提高晶體管穩態工作壽命試驗方法的可信度，提出了一種在試驗過程中實時測量並嚴格控制晶體管結溫在最高允許結溫附近的穩態工作壽命試驗方法。 -
Analyzing the various problems of current steady - state operation life test standard, it is pointed out that, not measuring and controlling, transistor junction temperature in current transistor steady - state operation life test can lead to fatal inaccuracy of the test results
摘要在分析了現行標準中晶體管穩態工作壽命試驗方法存在問題的基礎上，認為在現行的穩態工作壽命試驗中沒有對晶體管的結溫實施測量和控制，是導致試驗結果不準確的重要原因。 -
Theoretical analysis and simulation results demonstrate that asymmetries in lower and upper sidebands and imd magnitude variation depending on envelope frequency and junction temperature can appear, these results are in accordance with measurement results, and show that electrical and thermal memory effects exist
理論分析和模擬結果表明功率放大器上下邊帶不平衡和互調失真幅度依賴于包絡頻率和結溫，結果和測量的結果是一致的，說明存在電和熱記憶效應。 -
Temperature compensating method of reference junction
參比端溫度補償法 -
There is no air between the wire and hull to increase the dimension for quick heat transpiring and decrease the rising of wire temperature. the junction is combined from two directions thus to double the contact dimension and decrease the temperature of wire and junctions
3銅排與外殼之間無空氣隔層，熱阻小，波紋蓋板增大了散熱面積，導熱速度快，降低了導電銅排的溫升。 -
In this paper, firstly, monolithic materials cosb3 and bi2te3 were prepared by sparkle plasma sintering ( sps ) respectively, and at the same time the microstructure of cosb3 and bi2te3 were studied by sem ; the seebeck coefficients and electrical conductivities of monolithic materials were measured by standard - four - probe method ( ulvac zem - 700 ) in a he atmosphere simultaneously, and their thermal conductivities were investigated by laser flash method ( tc - 7000 ) in vacuum. secondly, the junction temperature of graded bi2te3 / cosb3 thermoelectric materials was optimized based on the thermoelectric transport properties of monolithic materials, also when graded materials were used in the temperature difference ranging from 300k to 800k, the length ratio of monolithic materials cosb3 and bi2te3 were optimized in theory. thirdly, graded bi2te3 / cosb3 thermoelectric materials were prepared by two - step sps sintering, and the relationship between its average seebeck coefficients and temperature were calculated by theory mo del
均質材料cosb _ 3和bi _ 2te _ 3的電導率和seebeck系數採用標準四端子法于he氣氛下在zem - 1上同時進行測量；熱導率採用激光微擾法（ tc - 7000 ）于真空狀態下進行測量；其次，在對均質材料cosb _ 3和bi _ 2te _ 3熱電傳輸特性研究的基礎上，對結構梯度bi _ 2te _ 3 cosb _ 3熱電材料的界面溫度進行了優化；為了使結構梯度bi _ 2te _ 3 cosb _ 3熱電材料在300k至800k的溫度范圍內具有最佳的熱電性能，本研究同時對梯度結構熱電材料當中均質材料cosb _ 3和bi _ 2te _ 3材料的長度進行了優化設計；第三，通過兩步放電等離子燒結的方法制備出了結構梯度bi _ 2te _ 3 cosb _ 3熱電材料；採用理論計算的方法研究了梯度結構熱電材料平均seebeck系數和溫度的關系；同時為了驗證設計的結果，本論文對結構梯度bi _ 2te _ 3 cosb _ 3熱電材料的開路輸出電壓和熱端溫度之間的關系及梯度材料在300k至800k的溫度范圍內使用時的功率輸出進行了相應的研究。 -
Constant - temperature method of reference junction
參比端恆溫法 -
Except temperature sensor and non - junction box, there are four kinds of junction box : splashproof type waterproof type jack type common junction box. users can choose according to need of working spot
熱電阻系列產品除感溫元件和無接線盒形式以外，一般有四種接線盒形式，即防濺式防水式插座式和普通接線盒是，可根據工作現場需要分別選擇。 -
Single junction temperature transducer sensor
單結溫度傳感器
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