junction surface 中文意思是什麼

junction surface 解釋
連接面
  • junction : n. 1. 接合,連接,連絡。2. 接合點,交叉點,(河流的)匯合處,(鐵道的)聯軌點。3. 【電學】中繼線。4. 【物理學】接頭,結。
  • surface : n 1 表面;地面;水面;廣場,空地。2 外觀,外表,皮毛。3 【幾】面;切口;【航空】翼面。adj 表面的...
  1. The asterion wasn " t always located over the superficial surface of the transverse - sigmoid sinus junction

    星點並不總是正對橫竇乙狀竇交匯處。
  2. From then on, the above two shortcomings had been overcome. impurity concentration and junction depth can be accurately controlled and freely adjusted. both low and high dopant concentration can be gained easily, and ideal distribution of ga in si can also be achieved with uniform surface concentration, good repeatability and high eligibility and excellence ratio, which have greatly improved comprehensive performances of the devices

    此工藝發明以來,克服了上述兩者的弊端,雜質濃度和結深能準確控制而又能任意調整,可進行低、高濃度階段性摻雜,得到元素ga在si中的理想分佈,而且表面濃度均勻一致、重復性好、合格率和優品率高,改善和提高了器件的綜合性能。
  3. In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points

    在器件設計過程中,在源端和漏端都採用了多晶場板技術,減小了表面pn結和nn +處的峰值電場,避免了器件在這兩處過早擊穿。
  4. Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance. the formation theory of aluminum - alloyed back surface field, the effect parameters to the doping concentration and the junction depth were analyzed

    比較了兩種商業太陽電池的雜質濃度分佈及結深情況;敘述了鋁背場的作用及形成原理,對影響鋁背場表面濃度和結深的參數作了分析。
  5. The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface

    實驗研究了快速熱擴散( rtd ) :通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性,發現: 1 )此樣機的溫度場在空間分佈上是均勻的; 2 )快速熱擴散可以比傳統擴散快3倍的速度進行擴散; 3 )在擴散溫度和摻雜磷源相同的條件下,與傳統擴散相比,快速熱擴散將雜質向結更深的地方推進。
  6. The result shows that under the effect of repeated impact load, the stress wave produces reflection in the metallurgical junction plane between coating and basal body, and forms stretch wave causing longitudinal split and angle split of coat ; the microcosmic spot pitting and deep layered peeling off occur in coating surface due to stress concentration ; the energy accumulation of impact loading causes rigidity variation and plastic deformation

    結果表明:在多沖載荷作用下,應力波在塗層和基體的冶金接合面發生反射,形成拉伸波造成塗層的縱裂和角裂;在塗層表面由於應力集中,塗層表面發生微觀點蝕和深層剝落;沖擊載荷能量的積累,造成塗層試樣硬度變化和塑性變形。
  7. Cz - jb junction box produced with bao steel a3 material with painting after surface finish

    Jb接線箱採用寶鋼產a3板材進行加工生產,表面加工處理后噴漆。
  8. Cz - jb junction box is produced with bao steel a3 material with surface finish of paining and plastic spray

    Jb接線箱採用寶鋼產a3板材進行加工生產,表面處理烤漆、噴塑。
  9. Wrkd - jz type thermocouple on the wall of boiler takes 4 sheathed thermocouple as measuring element. the thermal junction is fastened in stainless steel gathering heat clump with different curved surface of bearing treble points welded or m8 screw fixed to measure surface temperature of the wall of boiler, furnace and other equipments. wrkd - hg surface sandwich thermocoupleon the wall of boiler is specialized in measuring surface temperature of round column

    Wrkd - jz型鍋爐爐壁熱電偶採用4的鎧裝熱電偶做測溫元件,熱接點緊固在帶有不同曲面的不銹鋼,集熱塊上採用三點焊接或m8螺釘固定,用於鍋爐管壁,爐壁及其它設備的表面溫度。
  10. Experimental results show, with the not - uniform two - direction ballasting technology, the peak junction - temperature at the center of the chip can be lessened 7 - 10 surface temperature of the case can also reduce 3 - 7, and the heat - dissipating property of the power devices has distinct improvement

    實驗結果表明:具有非均勻雙向鎮流電阻結構的雙極功率器件,其晶元中心峰值結溫ih了村技人學博士論文可降低7 10ac ,谷殼表面的溫度也可降低3 7c ,器件的敝熱特性明顯岱島。
  11. Analysing the connection between soil temperature of the earth ' s surface and hereinafter 5cm, 10cm, 15cm, 20cm, 40cm and ground water depth, eliciting that temperature of soil underground 10 cm and ground water depth has junction. 3

    分析了地表及地表以下5cm 、 10cm 、 15cm 、 20cm 、 40cm土壤溫度,與地下水埋深間的相關性,得到結論地表以下10層面的土壤溫度與地下水埋深相關性最大。
  12. Magnetic resonance imaging ( mri ) demonstrated a heterogeneous mass arising from dorsal surface of pontomedullary junction

    磁共振造影發現一不均勻腫瘤長于延腦橋腦交界背面。
  13. Choose the good vacuum characteristic insulator, reduce the probable weakness ; 2. reduce the electrical field in the triple junction as possible 3. make the electrical field distributing along the surface more uniform

    總結提出了絕緣子設計的三點基本考慮: 1 、選擇真空性能好的絕緣子,減少可能存在的弱點; 2 、盡量降低三結合點電場強度; 3 、使電場沿絕緣子表面分佈盡量均勻。
  14. From the experiment results and the normalization results, the surface recombination velocities of silicon pn junction were obtained

    通過測量結果和計算結果的歸一化比較,獲得了其表面復合速率。
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