reacting gas 中文意思是什麼
reacting gas
解釋
反應氣體-
In arbitrary curvilinear coordinates, the wall function is used for treating near wall regions. the influences of two different inlet gas parameter distributions and turbulent combustion models, as well as three different afterburners on turbulent combustion flow fields and wall temperature profiles are calculated. comparisons of experiment results and calculations results show that second - moment combustion model is reasonable for modeling turbulent reacting flows, inlet gas parameter distributions is more important. calculation method is reliable and can be used for the optimum design of afterburner
數值研究三種不同幾何形狀、兩種進口氣流參數分佈、兩種紊流燃燒模型等對加力室內各氣流參數、隔熱屏和加力室筒體壁面溫度分佈的影響，計算結果與試驗數據比較表明:不同幾何形狀加力室對加力室內紊流燃燒流場的影響要比進口氣流參數分佈大些，正確給定進口氣流參數分佈較為重要，二階矩紊流燃燒模型更適用摸擬三維紊流燃燒流動，計算方法合理，編制的計算程序可靠，可供加力燃燒室優化設計用。 -
All pumps of this series are not suitable for gas containing too much oxygen or grains of dust, poisonous gas, explosive gas, corrosive gas, or gas capable of reacting with va - cumm oil, or for pumping gas from one vessel to another
該泵不宜抽除含氧過高、有害、有爆炸性、對金屬有腐蝕性、對真空油起化學反應，含顆粒塵埃的氣體，也不能用來把氣體從一個容器抽送到另一個容器作輸送泵。 -
In this paper, simple reacting flow model in solid - propellant ducted rocket combustor based on eddy break - up model is established. the model is used to simulate the three - dimensional combustion flowfields in an experimental motor. some factors how to affect the combustion efficiency are discussed in the paper, including air intake and gas generator nozzle
本文基於簡單反應的旋渦分裂模型，建立了固體火箭沖壓發動機補燃室內的湍流燃燒模型，並在該模型下對某實驗發動機進行了三維數值模擬，研究了補燃室設計參數包括進氣道出口設計參數和燃氣發生器噴管設計參數對燃燒效率的影響。 -
Modeling of dense particle - gas two - phase reacting flow in lagrangian approach
稠密氣固兩相反應流的拉格朗日法 -
Numerical simulation of three - dimension reacting flows in model gas turbine combustor
模型燃氣輪機燃燒室三維反應流數值模擬 -
A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by cvd, while supplying a first process gas for film formation and. a second process gas for reacting with the first process gas to a process field accommodating the target substrate
本發明揭示一種用於半導體製程之薄膜形成方法，其系配置成藉由cvd在目標基板上形成薄膜，同時將用於薄膜形成的第一製程氣體及用於與該第一製程氣體反應的第二製程氣體供應至一容納該目標基板的製程區域。
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