lattice mismatch 中文意思是什麼
lattice mismatch
解釋
晶格失配-
Calculation of the lattice mismatch between semiconductor epitaxy and substrate
半導體外延層晶格失配度的計算 -
We studied the influence of the interface strain and it shows that the lattice mismatch between substrate and film is the main reason of the above observations. expand strain decreases tm - i with increasing resistivity and compressed strain has the opposite effect. using double exchange model of zener these results can be explained qualitatively
27歐姆厘米，轉變溫度是78與154開爾文，磁場強度為7t時，磁阻率為習3及巧6 x結合雙交換模型和不同的應力作用，逐一解釋了產生差異的緣由，其中我們也討論了具有）取向的la 。 -
A ) the orientation of hbn on si ( 100 ) was dominated intrinsically by the crystalline habit and the lattice mismatch between the substrate and films. the former was dominated by the periodical bond chain ( pbc ) theory, while the latter was in relation with the stress and strain
A ） hbn在si （ 100 ）表面的取向受hbn自身結晶習性和它與襯底間的晶格匹配關系的控制，前者是受周期性鍵鏈（ pbc ）理論控制，後者與應力和應變有一定關系。 -
The calculation way of the lattice mismatch through a new simpilied model between semiconductor epitaxy and substrate are analysed, and the way of determine the lattice mismatch in xrd are also discussed
結果表明，正三角形晶格和長方形晶格匹配，長方形晶格的寬列原子的匹配具有優先性，不受長列原子匹配的影響。 -
The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film
晶格失配對異質外延超薄膜生長中成核特性的影響 -
High quality epitaxial sto / ybco multilayers can be fabricated due to their similar crystal structure and small lattice parameters mismatch. the filter made from sto / ybco thin films shows high tunable speed, low microwave loss and high power handling capability. so sto / ybco multilayers have attracted much interests for electronically tunable filter in the last decade
因此，利用高質量sto / ybco外延薄膜研製的濾波器具有響應速度快、微波損耗低、調諧范圍大、承載功率高等優點，是一種極具競爭力的電調濾波器技術方案，也是當前的研究熱點和開發重點。 -
The investigation of structure by x - ray diffraction shows that crystal parameters changes clearly when percenting ca and la into pbtio _ 3, it was caused by the ca ion and la ion replaced the pb ion of a position in perovskite compound, that bring lattice mismatch and asymmetrical replace
在pbtio _ 3中摻入la和ca可以有效改變薄膜的晶格常數，這是因為在abo _ 3型化合物中，鈣離子、鑭離子取代了a位的鉛離子，造成晶格失配和不對稱取代。 -
The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example, batio _ 3 / srtio _ 3 with a lattice mismatch of 2. 18 % ), the growth mode of thin films is layer - by - layer, and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ), the strain relaxation process can be explained by theory of coherent strained islands
氧化物薄膜異質外延應變行為的理論預測和解釋。對于晶格失配較小的外延體系（如batio3 / srtio _ 3 2 . 18 % ） ，薄膜以層狀方式進行生長，臨界厚度和應變釋放過程可以用經典的matthews - blakeslee公式進行預測;對于晶格失配較大的體系（如mgo / srtio _ 3 8 % ） ，薄膜以島狀方式進行生長，應變釋放過程可以由彈性應變島的理論體系進行解釋。 -
The different definitions of lattice mismatch are compared with each other
摘要比較了晶格失配度的各種定義，建議統一使用同一定義。 -
However, the simulation results of the superlattice with 4 % lattice mismatch show that the thermal conductivity increases monotonically with the period length
而對于具有4 %晶格失配的超晶格模擬結果卻表明，超晶格導熱系數隨周期長度的增大而單調上升。 -
These results indicate that lattice mismatch is the main reason why minimum thermal conductivity has not been observed in a large number of experimental studies
這一研究結果表明，材料的晶格失配是大多數實驗研究中沒有發現超晶格最小導熱系數的主要原因。 -
This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy, which has the capability for improving device structure and characteristics
這種技術解決了外延生長難以解決的晶格失配問題，為改善器件結構及性能提供了巨大的潛力。 -
The xrd results show that the sputtered lcmo film grains are grown epitaxially, when the lattice mismatch between film and substrate is small. the lcmo thin films grown on sto substrates show an in - plane tensile stress
Xrd的研究結果表明，當基片與lcmo薄膜間的晶格失配度較小時，薄膜和基片具有一致的晶格取向，薄膜具有較好的外延結構特徵。 -
And, the sbn films were found more and more ( 001 ) preferential orientated with the increasement of film thickness and it was attributed to the lower layer acting as the buffer one to improve the lattice mismatch between the sbn film and the substrate
而且，隨著膜厚的增加，處于底層的膜層起到緩沖層的作用，逐漸改善著薄膜與襯底之間的晶格失配，從而使得sbn薄膜在（ 001 ）方向的優先取向性越來越好。 -
The heteroepitaxial growth of 3c - sic on si substrate not only unfurls the maturity of si process, but also incarnates the excellence of 3c - sic, so that it become for long researchful direction. due to the large lattice parameter mismatch ( ~ 20 % ) and the large thermal expansion coefficient mismatch ( ~ 8 % ), however, the 3c - sic / si study is very difficult
然而，由於3c - sic與si之間存在較大的晶格失配度（約20 % ）和熱膨脹系數差異（約8 % ） ，因此， 3c - sic / si異質外延薄膜的制備非常困難，仍存在許多技術問題需要克服。 -
The successful preparation of zncdse qd on znse provides a way for the fabrication of qd in s - k mode with relative small lattice mismatch
該方法為較小失配下s - k模式量子點的制備提供了途徑。 -
Over coming lattice and orientation mismatch, direct wafer bonding allows fabricating of structures and devices which can ? get through hetero - epitaxial growth
利用鍵合技術可以集成晶格或晶向失配的材料，製造傳統外延生長技術不能製造的結構和器件。 -
It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials, however, for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little. 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas, we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films, and bn ( n - type ) / si ( p - type ) heterojunctions were prepared
5實現了氮化硼薄膜的n型摻雜，成功制備出bn型）乃…型）異質結並且首次系統研究了其卜v和cv特性我們用射頻濺射法濺射六角氨化硼靶，在工作氣體氮和氮中混入s ，沉積氮化硼薄膜，以研究氮化硼薄膜的n型摻雜，並得到bnh型）侶i …型）異質結。 -
For the sake of further understanding the p - fesi2 / si orientation relationships, e calculate the orientations by grain boundary orientation theory. the best p - fesi2 / si orientation relationship is situated in the vicinity of ( 100 ) p / / ( 100 ) si, [ 010 ] p / / 011 > si, with small angular deviations for adapting to the lattice mismatch
最佳取向關系都在（ 100 ） p （ 100 ） s計n10兒八011 ；附近，但不完全與之相同， x 、 x 、 z方向都有小的轉角，從理論上證實了取向關系要通過轉角來調整失配。 -
On the other hand, if the introduction of the residual stress is fully understood, one can make good use of the strain induced by the lattice mismatch between the film and the substrate to modulate and improve the properties of the ferroelectric thin films
另一方面，如果人們能夠對薄膜應力的產生機制有較深刻全面的理解，就可能通過適當的制備手段來利用薄膜與基片間的應變效應來調制和提高薄膜的性能。
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