low mobility layer 中文意思是什麼
low mobility layer
解釋
低遷移率層-
After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次,根據器件參量對閾值電壓和輸出特性的影響,以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構,詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值,對器件進行優化設計。
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