luminescence efficiency 中文意思是什麼

luminescence efficiency 解釋
發光效率
  • luminescence : n. 【物理學】發光，發螢[冷、磷]光。adj. -nescent
  • efficiency : n. 1. 功效。2. 效率；效能；實力，能力。3. 【物理學】性能。
  1. This type of long persistent phosphor has the advantages of innocuity, no radioactivity, high luminescence, long duration and no need of electricity, so it can be regarded as high efficiency solid display material

    它無毒、無放射性、亮度高、余輝時間長、不消耗電能，是一種高效節能的固體發光顯示材料。
  2. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  3. The influence of y2o2s : eu phosphors fluorescent spectra, chroma and luminescing efficiency is studied with the changing of concentration of eu34 " ion, and the suited concentration of eu3 + ion is acquired, all these provided support for the research on the yzc ^ s : eu, mg, ti long - persistent phosphors structure and luminescence performance

    研究了不同eu含量對y _ 2o _ 2s ： eu熒光體光譜性能、發光效率和色度的影響，給出了最適宜的摻eu濃度，為進一步研究探討y2o2s ： eu ， mg ， ti長余輝磷光體的基質組成和發光性能提供依據。
  4. This could increase the work function of ito, which would decrease the device threshold voltage and increase the luminescence efficiency consequently

    因此，採用氧等離子體處理的ito薄膜作為oled的陽極將降低發光器件的開啟電壓，提高其發光效率。
  5. Semiconductor luminescence materials and devices were developed as one of semiconductor technology in 1960. the luminescence devices made with the materials had developed quickly. but the pure semiconductor materials could not better because the luminescence efficiencies were lower. doping is very important in order to improve the luminescence efficiency

    半導體發光材料和器件是六十年代發展起來的半導體技術中的一個分支，單一的純凈本徵半導體的性能往往不能滿足實際的需要，發光效率或發光幾率低，發光強度弱，提高發光效率的有效途徑就是進行材料的摻雜改性。
  6. By the study of the whole decay curves of 10 hours, the influence of each step is summarized, and the best stoichiometry and preparation techniques are acquired. the crystal structure of sral2o4 eu2 +, dy3 + is monoclinic system, which is a high efficiency luminescence crystal structure. the emission spectrum and the excitation spectrum of sral2o4 eu2 +, dy3 + powder are measured

    此外，通過x射線衍射譜確定了所制備的sral _ 2o _ 4 ： eu ， dy長余輝材料晶體為單斜晶系結構，並測量其發射光譜，激發光譜，初步討論了sral _ 2o _ 4 ： eu ， dy長余輝蓄能材料可能的發光機理。
  7. Organic and polymer electroluminescence materials have attracted much interest because of its high luminescence efficiency, full color, processable and so on

    有機電致發光材料由於具有高發光效率，亮度和顏色可調，易加工成膜等優良特性，引起了人們的極大興趣。
  8. By adopting single doped, co - doped or triple - doped ways after adjusting the ingredients of host materials, the author has obtained several up - conversion materials with highly blue and green up - conversion efficiency as well as characteristic luminescence lines and peculiar relations of ratio of luminescence intensities

    作者通過調整基質材料，採用單摻雜、雙摻雜和多摻雜、等方式，得到了幾種藍綠光上轉換效率高的上轉換發光材料，其熒光譜線較新穎，色比關系較特殊。
  9. Silicon horizontal integration processes are very mature. considering the compatibility of the technics, taking silicon material as the luminescence devices will be the perfect selection. but the most important things are how to improve the efficiency of the luminescence

    由於硅的平面集成工藝已相當成熟，所以從工藝兼容性考慮，用硅基材料作為發光器件將會是最佳的選擇，而其獲得應用的關鍵是提高發光效率。
  10. In order to clarify the origin of pl and enhance the luminescence efficiency of materials, the study of the relationship between preparation process and pl properties is very important

    對制備方法及其工藝參數對薄膜熒光特性影響的研究，不僅可以進一步澄清各熒光帶的起因，而且也是提高材料發光性能的重要途徑。
  11. The results indicate that carriers recombining and causing luminescence in two organic layers by traversing their interface. the influence of barrier height of transport layer on current density, recombination current and recombination efficiency of the devices is great

    結果表明：雙層器件的發光是載流子隧穿內界面后在兩有機層中的復合發光，輸運層的勢壘高度對載流子電流密度、復合電流密度以及器件的復合效率影響很大。
  12. By the aid of pl, ple and el, the influence of the defects, luminescence centers and the structure on luminescence of the films had been investigated, especially on the onset of the bias voltage, the intensity of el, and the efficiency of the el

    通過對上述薄膜的pl 、 ple以及el的分析，研究了此頭薄膜中所存在的缺陷及發光中心，以及結構對發光的影響。著重討論了摻鋁對薄膜電致發光的啟動電壓、發光強度、發光效率的影響。
  13. Based on the above work, the optical absorption and photoluminescence ( pl ) properties of a - sinx : h films with different compositions are studied through ultraviolet - visible spectroscopy ( uv - vis ) and time - resolved photoluminescence ( tr - pl ), the dependence of pl intensity decay on emission photon energy is found, the luminescence mechanism of nanosilicon embedded in silicon nitride matrix is presented, finally, the effective approaches to improving the luminescence efficiency of a - sinx : h films are discussed

    在此基礎上，通過紫外-可見光譜（ uv - vis ）技術，時間分辨光致發光譜技術研究了不同組分的富硅a - sin _ x ： h薄膜的光吸收和光輻射特性，得到了材料光致發光衰減和輻射光子能量之間的關系，提出了鑲嵌在氮化硅中的納米硅的發光機制，進而探討了提高納米硅薄膜發光效率的有效途徑。
  14. Effects of transfort layers on luminescence efficiency of organic bilayer devices

    輸運層對雙層器件電致發光效率的影響
  15. A study and comparison of up - conversion luminescence efficiency in four er3 yb3 co - doped glasses

    共摻四種玻璃中上轉換發光效率的比較及研究
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