micron 中文意思是什麼

micron 解釋
n. 名詞 （pl. microns, -cra ） 微米〈100萬分之一米，符號μ〉。

  1. If the micron of polybag is 38 micron or higher, then no need for warning or air holes

    是不是說：要是膠袋的厚度是38微米或者更厚的話，就不用警告性語標或者打孔了！
  2. Multiple depositions of patterns to different filter types, including dichroic, can be aligned with remarkable micron - scale precision and repeatability

    多層不同濾光器類型的圖案沉積，包括二色性的技術，可以提供卓越的精確度和可重復性。
  3. One of trends of scientific and technological development is microminiaturization, from millimeter to micron and even nanometre

    21世紀，科學技術的趨向之一是向微小方向發展，由毫米級、微米級繼而涉及納米級。
  4. It is able to trap particles above 0. 3 micron in size

    它能阻隔0 . 3毫米以上的微粒。
  5. Micron grade lenght measurement by sem

    微米級長度的掃描電鏡測量方法
  6. In response to the low - speed, 3 - micron resolution of detection

    在低速響應下，檢測解析度為3微米。
  7. Exclusively fda - compliant pure polypropylene micron fiber

    使用符合fda要求的過濾純聚丙烯毛細纖維。
  8. Research on micron electrohydraulic position feedback control system

    微米級電液位置反饋控制系統的研究
  9. Tribological performance of nanon and micron fe2o3 filled uhmwpe composites

    基復合材料的摩擦學性能研究
  10. Numerical simulation of air sliders in an ultra sub - micron flying system

    深亞微米飛行系統滑塊的數值模擬
  11. In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays

    本論文以鐵磁共振為主要研究手段，輔助以磁性和磁光測量，對外延于gaas及inas上的不同厚度的單晶fe超薄膜、不同厚度的nife多晶薄膜和電子束光刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形薄膜的磁性，特別是磁各向異性進行了較為系統的研究。
  12. As the ic manufacturing process develops from sub - micron to very deep submicron ( vdsm ) technologies, with current lithography tools ( 248nm and 193nm ), foundries can not manufacture products that designs want because of so - called optical proximity effect ( ope )

    當集成電路生產工藝發展到納米級時，利用現有的曝光設備（ 248nm和193nm ） ，由於所謂的光學鄰近效應，集成電路製造廠商已經無法製造出滿足電路功能要求的產品。
  13. Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing

    建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型，有助於開發由成品率驅動的版圖設計工具，自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。
  14. The light guiding unit on the surface is composed of sub - micron gratings whose transmission wavelengths are red, green and blue in order. the light source are red 、 green 、 blue led or semiconductor laser array. to enhance the light utilization, the surfaces of light guide plate except the incident and transmitted surfaces are coated with metallic film

    本文設計的亞微米光柵型導光板為矩形狀的，導光板上表面的導光單元是由三套出射光主波長分別是紅光632 . 8nm ，綠光521nm ，藍光441 . 6nm的亞微米光柵組成，光源採用的是紅、綠、藍三色發光二級管或者半導體激光器陣列，為了提高光能利用率，除入光面和出光面外，導光板其餘面都鍍上金屬膜。
  15. This paper summarizes the present situation of modern microelectronic device is. with integrated degree of circuits increasing, and the characteristic sizes of technics minishing as well as the device sizes turning into sub - micron and deep sub - micron, there are many problems

    概述了現代微電子器件發展的現狀，電路集成度的不斷提高，加工工藝特徵尺寸的不斷減小，器件尺寸進入了亞微米、深亞微米階段，出現了許多不良效應。
  16. Therefore, cleaning of micron and submicron contaminate particles has become an important procedure in the process of glass substrate with super - smooth optical surface, and also become one of the key solving technology to ensure the quality of substrate

    表面清洗是光學基片製造中必不可少的工序之一，隨著表面污染微粒的容限提高到微米甚至亞微米級，傳統的清洗技術難以滿足要求，已經成為制約基片性能提高的主要技術難題之一。
  17. Culpepper, m. l., et al. " design of integrated eccentric mechanisms and exact constraint fixtures for micron - level repeatability and accuracy. " paper accepted for publication in precision engineering

    等，微米水平上重復性和精確性的綜合離心裝置和精確約束裝置. 《精確工程學》同意發表的論文
  18. So re oxides has two form existence, one is concentrate on the matrix equiaxial crystal grain boundary as a micron particles and the other is distributed in matrix crystal dispersively as the nanometer particles compared the electron emission performance of mo - la2o3, mo - ; la2o3 - y2o3 and mo - la2c > 3 - sc2o3 cathode, the mo - la2o3 - sc2c > 3 cathode show excellent electron emission character

    上述研究表明不論是在稀土?鉬陰極還是在稀土?鎢電極中，稀土氧化物的存在形式有兩種，一種是微米級的顆粒偏聚于晶界處，另外一種是彌散分佈於基體晶粒的納米小顆粒。
  19. Six international - level speakers sponsors and 126 qualified attendees and over 300 web cast audiences. sponsors included : motorola, enea, national semiconductor, micron, silicon laboratories, texas instruments

    贊助商包括：摩托羅拉公司歐洲原子能機構美國國家半導體公司micron公司硅實驗室公司德州儀器公司。
  20. Sintering behaviors of sub - micron - al2o3 green compacts at constant heating rates

    3坯體的恆速升溫燒結行為
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