mode field 中文意思是什麼

mode field 解釋
狀態欄位, 方式欄位
  • mode : n 1 法，樣，方法，方式。2 模，型；樣式，體裁，款式；習慣。3 風尚；〈the mode〉流行，時髦。4 【語...
  • field : n 菲爾德〈姓氏〉。n 1 原野，曠野；（海、空、冰雪等的）茫茫一片。2 田地，牧場；割草場；〈pl 〉〈集...
  1. Finally we focus our attention on studying the emission spectrum of two atoms driven by a single - mode field in an ideal cavity. we showed that the atomic emission spectrum is insensitive to the phase of field for the two atoms initially in the coherent superposition state tf / = v2 / 2 ( j +, - ) h ? + } ), when the two atoms is initially prepared in ( fs * } = cos ( 0 / 2 ] +, + ) + sm ( 0 / 2 ) ei ' p -, - ), the atomic emission spectrum is associated with not only the field photon - number distribution and the atomic populations, but also the phases of the field and the atomic dipole

    接著考察了好腔中由單模量子場驅動的雙原子發射譜，結果表明初態為的雙原子發射譜與驅動場的相位無關；而初態為的雙原子發射譜不僅與光場的光子數分佈以及原子的布居數有關，而且依賴于光場的相位以及原子偶極矩的相位，並且在適當的條件下，壓縮真空場可將雙原子俘獲在相干疊加態。
  2. The optical waveguide characteristics such as waveguide mode field profile, and the mode cut - off conditions, and the waveguide dispersion are analyzed with the solution of a certain wave equation. the mechanism of index ellipsoid of linbo _ 3 crystal distorted with an external applied electric field by means of the electro - optic tensor as investigated. based on the operation principle of m - z waveguide, the operation mechanism of the two - section cascaded m - z waveguide and of the modulation electrode are

    調制器的結構設計從m - z干涉型光波導工作原理出發，分析兩級串聯m - z干涉型光波導的工作原理，調制電極的工作原理，從而設計出了工作於1 . 054 m的、兩級串聯m - z干涉型光波導、行波電極linbo _ 3為強度調制器的結構參數。
  3. Optical fiber mode field parameters test equipment

    光纖模態參數測試器
  4. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  5. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  6. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  7. Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

    半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范
  8. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范
  9. Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4856 cs4861型硅n溝道耗盡型場效應晶體管詳細規范
  10. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范
  11. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范
  12. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范
  13. Connectors, optical fiber cable, 2 positions, multi - mode, field, miniaturized, jgl27 - 1. 8 - 03, detail specification for

    Jgl27 - 1 . 8 - 03型兩芯輕型多模野戰光纜連接器詳細規范
  14. Connectors, optical fiber cable, 4 positions, multi - mode, field, miniaturized, jgl27 - 2. 5 - 01, detail specification for

    Jgl27 - 2 . 5 - 01型四芯小型多模野戰光纜連接器詳細規范
  15. The analysis of mode field of planar optical waveguide by the scalar fd - td method

    標量時域有限差分法用於平面光波導模場分析
  16. Evolution of the entropy of a two - mode field interacting with a casade three - level atom system

    型四能級系統互作用光場的熵演化
  17. Entropy property in the system of a single - mode field interacting with two two - level atoms

    雙光子過程單模輻射場與二能級原子相互作用系統場熵的壓縮特性
  18. For the coupling between the laser diode and the tapered single - mode fiber, the overlap integral is used to compute the coupling efficiency on the basis that the laser diode outputting mode field and the fiber eigenmode field is approximated to basic - mode gauss field. and based on the same approximation, the coupling efficiency between the semi - tapered fiber and the laser diode is calculated by using the ray - traced method. the parameters are analyzed for the effect on the coupling efficiency and give the theory foundation to optimize the design of the tapered fiber coupling system

    首先通過對半導體激光器輸出模式場和光纖本徵模式場的高斯基模近似，利用交疊積分計算了錐形單模光纖與激光器的耦合效率問題；其次依據以上近似，利用光線跡蹤法計算了半錐形多模光纖與激光器的耦合效率問題，給出各個參數對耦合效率的影響和作用，為優化設計錐形光纖耦合系統提供了理論依據。
  19. Abstract : this paper describes a new kind of mode field diameter measuring system of single - mode fiber. it adopts reference measuring method introduced by national standard, the far field, scan method. it has high accuracy of measurement, high speed and strong anti - jamming ability and it is easy to be operated. it can not only be used in laboratory but also in plant environment. and it can substitute the same kind of import products

    文摘:介紹了一種新型的單模光纖模場直徑測試系統，它採用國際推薦的基準測試方法? ?遠場掃描法，具有測量精度高、速度快、抗干擾能力強和操作簡單的特點，既可用於實驗室中，也適合在工廠環境下使用，能夠替代同類進口產品。
  20. Mode field diameter of single - mode optical fiber by knife - edge scanning in the far field

    用遠場刀刃掃描法測定單模光纖模場直徑
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