molecular beam 中文意思是什麼

molecular beam 解釋
分子束
  • molecular : adj. 分子的,由分子形成的,分子內[間]的。adv. -ly
  • beam : n 1 梁，棟梁，桁條；（船的）橫梁。2 船幅；（動物、人的）體幅。3 （秤）桿，杠桿，（織機的）卷軸，...
  1. Semiconductor superlattice distributed bragg reflector grown by molecular beam epitaxy

    的分子束外延生長
  2. Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy

    生長的跨導為186
  3. Molecular beam epitaxy, mbe

    分子束磊晶
  4. Collisonal quantum interference ( cqi ) was observed in the intramolecular rotational energy transfer in the experiment of the static cell, and the integral interference angles were measured. to observe more precise information, the experiment in the molecular beam should be taken, from which the differential interference angle can be obtained precisely. in this paper, the theoretical model of cqi is described in an atom - diatom system in the condition of the molecular beam, based on the first - born approximation of time dependent perturbation theory, taking into accounts the anisotropic lennard - jones interaction potentials. the method of observing and measuring correctly the differential interference angle is presented. the changing tendencies of the differential interference angle with the impact parameter, velocity, and et al. are discussed

    分子內部轉動傳能的靜態池實驗觀察到了碰撞量子干涉效應（ cqi ） ，並且測得積分干涉角，為了獲得更加精確的分子內部轉動傳能的碰撞量子干涉效應信息，實驗就必須要採用分子束實驗進行.本文理論上採用各項異性相互作用勢，應用含時微擾理論的一級波恩近似，假想在分子束實驗的條件下，建立在原子-雙原子分子體系中碰撞量子干涉的理論模型.理論上推導出微分干涉角具體表達式，通過計算定性地討論了微分干涉角隨著碰撞參數、速率等的變化趨勢，同時初步探討了實驗的正確觀測途徑，得出了採用分子束進行實驗觀測的實驗方法，為進一步進行分子束實驗提供了理論基礎，對實驗的進行起到了一定的借鑒作用
  5. Metal organic molecular beam epitaxial growth system

    有機金屬分子束磊晶生長系統
  6. Gas source molecular beam epitaxial growth system

    瓦斯源分子束磊晶生長系統
  7. This article deduces molecular beam ' s momentum distribution function, calculates mean momentum, root mean square momentum and furthorest possible momentum, and compares them with the characteristic physics quantities corresponding to molecular beam ' s speed distribution function one by one

    摘要本文首先推導出分子束的動量分佈函數，然後計算了平均動量、均方根動量和最概然動量，並與分子束的速率分佈函數相應的特徵物理量逐一比較。
  8. Molecular beam mass spectrometer

    調制分子束質譜計
  9. Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed

    本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。
  10. In our experiments, these complexes, produced in supersonic beam expansions, are amenable to high resolution resonant two - photons ionization spectroscopy, which make it possible to obtain detailed information on their electronic - vibrational states. through resonant ionization spectra and together with time - of - flight mass spectrometry in supersonic molecular beam, the internal rotation for ch3 and intermolecular vibration for atom ar ( or n2 ) in the complexes ( c6h5ch3.

    實驗中採用了高解析度的共振電離光譜技術和超聲分子束技術，通過共振電離光譜和飛行時間質譜技術的手段探明了復合物c _ 6h _ 5ch _ 3 … n _ 2 、 ar的電子態、振動態以及甲基（ ch _ 3 ）內轉動的詳細情況。
  11. 4. we attempted to carry out the experiment of co a3 ( v = 18 ) / d1 ( v = 10 ) collision with he in a static cell using oodr - mpi technique for the preparation of doing experiment in a molecular beam machine. in the experiment of 2 + 1 ' + 1 " two - color rempi, we conformed the accidental predissociation of co ( e1, v = l ) state, and studied the effect of the accidental predissociation of co ( e1, v = 1 ) state for different rotational states

    4 .為了在分子束實驗條件下進行實驗，用光學一光學雙共振多光子電離光譜（ oonr一mpi ）的方法，在靜態池條件下，對較長壽命的eo （ a 』 n ， v = 18 ） / （ d 』 ， v = 10 ）單重態一三重態之間的碰撞傳能實驗進行了嘗試。
  12. High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique. successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out

    本文研究了在gaas和gap襯底上，本徵型和n型al摻雜zns基單晶薄膜的分子束外延生長，獲得了高質量的單晶外延薄膜。
  13. We took some experiments using oodr - mpi technique in the static cell for the preparation of the experiment in the molecular beam

    為分子束實驗做了嘗試性的實驗（在靜態池中） 。
  14. A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt

    室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓
  15. Main works and results include : ( 1 ). growth method of self - organized quantum dots was studied. high quality inas self - organized quantum dots were grown by mbe ( molecular beam epitaxy ) technique

    本文開展的主要工作和結果有： （ 1 ）研究了自組織量子點的生長方法，利用分子束外延技術（ mbe ）生長出高質量的inas自組織量子點。
  16. Fortunately, with the improvement in the material growth, gap1 - xnx alloys with nitrogen concentration as high as several percentage have been successfully grown by molecular beam epitaxy ( mbe ) or metalorganic vapor - phase epitaxy ( movpe ). more and more attentions have been paid to this alloy for its distinct property such as the giant band gap and effect, for this reason, gap1 - xnx alloys are usually called abnormal alloys

    人們研究發現， gapn混晶具有一些獨特的光電性質，例如其帶隙不是gap和gan的線性內插值，而是存在著較大的帶隙降低和巨大的帶隙彎曲系數，因此gapn混晶又被稱為「反常」混晶，從而引起了人們越來越多的關注，並成為當前的一個研究熱點。
  17. To study its properties and obtain high quality thin films, a variety of techniques have been used such as molecular beam epitaxy ( mbe ), metal organic chemical vapor deposition ( mocvd ), magnetron sputtering, pulsed laser deposition, to prepare zno thin films

    為了獲得高質量的氧化鋅薄膜材料，人們已採用分子束外延，有機化學汽相沉積，脈沖激光沉積，磁控濺射等各種技術來制備氧化鋅薄膜材料。
  18. Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )

    本文採用分子束外延（ mbe ）方法在gaas （ 001 ）襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜，採用原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）與x射線雙晶衍射（ dcxrd ）等方法研究了insb / gaas薄膜的表面形貌與結晶質量。
  19. Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies

    Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。
  20. The fabrication methods such as molecular - beam epitaxy and metal - organic chemical vapor deposition and experimental studies of their properties have been reported, and theoretical studies mainly concentrate on the impurity binding energy varying the size of the wire, the effect of the applied electric field or magnetic field, and photoionization of impurities

    在實驗上已經用分子束外延和金屬有機化學汽相淀積等技術對其物理性質進行了廣泛的研究，而理論上的研究主要集中於研究量子線的尺寸對雜質束縛能的影響、外加電場或磁場的作用及雜質的光致電離效應。
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