mos device 中文意思是什麼

mos device 解釋
金屬-氧化物-半導體器件
  • mos : 不需要現場收音的無聲取景
  • device : n. 1. 設計，計劃；方法，手段。2. 〈pl. 〉意志，慾望。3. 謀略，策略，詭計。4. 器具，器械，設備，裝置。5. 圖案，圖樣；花樣；紋章；標記，商標；（紋章上的）題銘。
  1. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  2. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  3. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  4. This article is mainly about the sige hetrojunction mos device fabricated by soi technology

    本論文主要介紹的是基於soi技術的sige異質結mos器件。
  5. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
  6. Spic ( smart power integrated circuit ) based on new power mos device develop rapidly along with the advancement of micro - electronics technology

    隨著微電子技術的進步，以新型功率mos器件為基礎的智能功率集成電路（ spic ）得到了迅速發展。
  7. V groove mos device

    槽型柵金屬氧化物半導體掐
  8. Based on mos capacitive oxygen micro - sensor, the structure of mosfet oxygen micro - sensor was presented. the heater and temperature sensor are integrated into the device

    以mos電容式氧氣微傳感器的分析為基礎，設計mosfet氧氣微傳感器結構，在器件中集成了加熱元件和測溫元件。
  9. Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2

    自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。
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