nucleation density 中文意思是什麼

nucleation density 解釋
成核密度
  • nucleation : n. 【物、化】成核（現象）；晶核過程，核子作用；集結；人工降雨作用。
  • density : n. 1. 稠密；濃厚。2. 【物理學】濃度；密度；比重。3. 愚鈍，昏庸。
  1. Study of active nucleation site density in subcooled nucleate pool boiling

    池內過冷核沸騰表面活化核心密度的研究
  2. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  3. The paper works out the ice crystal spectrum distributing in the different macroscopic and micro - backgroud of the cloud ( ie, the thickness, the temperature and the supersaturation with respect to ice of the nucleation layer ). this paper also works out the amount of catalyst which is allowed in the cloud nucleation layer according to the different quantity of the supercooled water, the density of the supersaturation of the vapor with respect to ice. simultaneously, the paper discusses the i nfluence of remaining time when seeding artificial ice nucleus in the different ascending - velocity and altitude, and elicits the proper seeding altitude of the catalyst

    以此解為依據，得出了不同均流時，人工引入冰核在核化層存留時間，再以此時間作為人工冰核凝華增長時間，求出不同的雲宏微觀背景（如核化層厚度、溫度、冰面過飽和度等）下的冰晶譜分佈，經和實際資料比對符合相當好。進而求出核化層中不同過冷水量、冰面過飽和水汽密度下雲核化層可允許的催化用量。同時討論了不同升速，不同高度引入人工冰核時對其存留時間的影響。
  4. The three different pretreatment methods were adopted respectively in order to increase nucleation density

    為提高金剛石成核密度分別採用以下三種不同的基片處理方法。
  5. Hence, it is considered that the high nucleation density integrated with low substrate temperatures causes the growth of nanocrystalline p - sic films effectively

    因此，高的形核密度與低的襯底溫度是促進納米- sic薄膜生長的關鍵因素。
  6. When the third pretreatment method was adopted, microwave input power was 700w, gas pressure was 1000pa and substrate was tangent on plasma ball surface, diamond films showed higher nucleation density by contrast

    經過對比採用方案基片處理方式，基片和等離子球處于相切位置時，在微波輸入功率700w和反應氣壓1000pa時沉積工藝參數時，基片成核密度較高。
  7. On the surface of annealed 45 steel, as the pearlite in it contains cementite phase and has high crystal boundary density, the nucleation and growth of deposits prefer to occur at the pearlite at the beginning during depositioa the coating exists in form of nano - polycrystal layers composed by gathering of nano - sized crystals

    在退火態45鋼表面，由於珠光體組織中含有滲碳體相且具有比較高的晶界密度，因而在沉積初期鍍層優先在此處形核和生長；鍍層在基體表面是以納米尺度的晶粒聚集在一起形成的聚晶體形式存在的。
  8. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  9. By analyzing of the potentiostatic transients, the diffusion coefficient d of the depositing nickel ions and saturated nucleus number density nsat were estimated, the effects of applied potential on nucleation and growth ware also discussed

    通過分析恆電位暫態曲線，求出鎳離子的擴散系數d ，以及不同外加電位下的飽和晶核數密度n _ （ sat ） ，探討了外加電位對成核作用的影響。
  10. The research and application of the diamond films were reviewed in this paper, and the nucleations on different substrates in hfcvd ( i lot filament chemical vapor deposition ) system were introduced. the improvement of the diamond nucleation on si, ni, cu was investigated, in order to deposit diamond of high density. the p - n junction between b - implanted diamond films and n - type si substrate was investigated

    本論文簡要敘述了金剛石薄膜的研製進展和應用，介紹了用化學氣相沉積法（ hotfilamentchemicalvapordeposition ）在不同的襯底上的金剛石薄膜的制備方法和形核，並對si 、 ni 、 cu三種不同的襯底的金剛石膜研究了如何增大形核密度、提高形核質量。
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