optical emission 中文意思是什麼

optical emission 解釋
光學發射
  • optical : adj 眼的;視覺的;視力的;幫助視力的;光學(上)的。 optical activity 【物理學】旋光性。 an optic...
  • emission : n. 1. (光、熱、氣體等的)發出,發射,射出,放射;傳播。2. (紙幣等的)發行;發行額。3. 發出物,放射物。4. 【醫學】排出;遺精。
  1. Surface chemical analysis - glow discharge optical emission spectrometry gd - ose - introduction to use

    表面化學分析-輝光放電發射光譜方法通則
  2. Surface chemical analysis - glow discharge optical emission spectrometry gd - oes - introduction to use

    表面化學分析.輝光放電發射光譜.使用介紹
  3. Gd - oes. surface chemical analysis - glow discharge optical emission spectrometry gd - oes - introduction to use

    表面化學分析.輝光放電發射光譜測定法
  4. The methods for chemical analysis of zinc and zinc alloys - the determination of lead, cadmium, iron, copper, tin, aluminium, arsenic, stibium, magnesium lanthanum and cerium contents - the inductively coupled plasma - optical emission spectrometric method

    鋅及鋅合金化學分析方法鉛鎘鐵銅錫鋁砷銻鎂鑭鈰量的測定電感耦合等離子體-發射光譜法
  5. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈;分析了不同基團的相對密度隨宏觀放電條件(微波輸入功率、放電氣壓、源氣體流量比)的變化規律;探討了等離子體中各種基團的生成途徑;在不同源氣體流量比的條件下沉積了a - c : f薄膜並通過傅立葉變化紅外吸收光譜( ftir )的測量得到了薄膜中鍵結構的信息;分析了a - c : f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。
  6. Standard test method for optical emission vacuum spectrometric analysis of stainless steel by the point - to - plane excitation technique

    用點對面激發技術作不銹鋼的光輻射真空光譜測定分析
  7. This article discusses the in - situ rapid and exact analysis of chemical components in molded metallic materials by portable optical emission spectrometer in site testing

    摘要討論了便攜式光譜儀, ?確、快速地對已成型的金屬材料化學成分的無損現場分析應用。
  8. In situ diagnosis of plasma environment for synthesizing diamond film was conducted by langmuir single probe and optical emission spectroscopy. the mechanism of diamond growth was investigated and the n - type diamond was deposited by glow plasma assisted chemical vapor deposition ( cvd )

    本文通過langmuir單探針和光發射譜對合成金剛石薄膜的等離子體環境進行了原位診斷;初步探討了金剛石薄膜生長的動力學過程;並採用輝光等離子體輔助化學氣相沉積( cvd )技術制備得到了n型金剛石薄膜。
  9. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光放電等離子體增強pld的氣相反應,給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子體內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高晶態碳氮材料的生長速率。
  10. Standard guide for describing and specifying the spectrometer of an optical emission direct - reading instrument

    光學輻射直讀儀表的分光計的描述與規定用標準指南
  11. Standard test method for analysis of ores, minerals, and rocks by the fire assay preconcentration optical emission spectroscopy

    用燃燒檢測預精選技術對礦石礦物和巖石做光譜測定分析的標準試驗方法
  12. According to the test conditions, the double polarity inputting mode is adopted in the circuit of voltage - frequency converting part ; storage batteries are used in the optical emission part of optical fibre isolating and transmitting device, that can guarantee isolation between the main circuit and the testing system ; the 89c51 singlechip is used in the singlechip testing - controlling unit, the peripheral circuits are extended, data are transmitted through the serial port in this part ; the p opular software delphi5. 0 is used in the pc part, the communication between singlechip and pc by serial port, plotting of current wave, regulation of data ; the optical - electrical isolating and triggering are used in the controlling part, this can guarantee the veracity and reliability of breakers triggered, this triggering mode is also used in the triggering of the main closing breaker, the tested breaker and the assistant breaker, the triggering signals are sent out by a singlechip

    壓頻轉換部分電路中根據實際情況採用了雙極性輸入方式;光纖隔離傳輸裝置的光發射部分電源採用了蓄電池供電,確保了主迴路與測試迴路的完全隔離;單片機測控部分採用了89c51單片機,擴充了外圍電路,通過串口向pc機傳送數據; pc機與單片機之間的串口通訊、波形繪制、數據管理等都採用了軟體delphi5 . 0編寫。該測試系統中預留了輸出口,可以對合成迴路中的主合閘開關、被試開關、輔助開關進行觸發,信號由單片機發出,控制部分採用了光電耦合隔離觸發的方法。軟體設計主要集中在對電流信號的數據採集、數據處理、數據傳送、人機界面、波形繪制和數據管理,軟體部分又可分為單片機和pc機程序設計兩大部分。
  13. It is found that, the modes of coaxial optical emission of dissimilar gaps, clustering at distinct numerical range, can distinguish 1st, 2nd and 3rd class welds of different welding quality effectively

    結果表明,同軸光信號幅值的眾數在不同間隙的焊縫段,聚集在線性可分的不同的區間,可以有效分開焊接質量不同的類、類、類焊縫;信號的分段功率譜分析能夠較為直觀地反映焊接狀態的變化。
  14. Methods for analytical of copper cathode - the optical emission spectrometry

    陰極銅直讀光譜分析方法
  15. Standard practice for evaluating an optical emission vacuum spectrometer to analyze carbon and low - alloy steel

    分析碳和低合金鋼用光輻射真空分光儀的評估
  16. Standard test method for optical emission vacuum spectrometric analysis of blast furnace iron by the point - to - plane technique

    採用點對面技術的高爐鐵的光輻射真空光譜測定分析的標準試驗方法
  17. Aluminium and aluminium alloys - chemical analysis - inductive coupled plasma - optical emission spectrometric method

    鋁和鋁合金.化學分析.感應耦合等離子體光學發射光譜分析法
  18. Standard practice for sampling of zinc and zinc alloys for optical emission spectrometric analysis

    光發射光譜測定分析用鋅和鋅合金取樣的標準實施規程
  19. Aluminium and aluminium alloys - chemical analysis - guideline for spark optical emission spectrometric analysis

    鋁和鋁合金.化學分析.閃光光學發射光譜分析指南
  20. Method for optical emission spectrochemical analysis of aluminium and aluminium alloys

    鋁和鋁合金的光發射光譜分析法
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