optoelectronic devices 中文意思是什麼
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It shows high potential on light - emitting devices, photodetector, optoelectronic devices and sensor
結果表明，摻鋁樣品引入了新的缺陷，發光強度增強。 -
Semiconductor optoelectronic devices detail specification for type gd101 pin photodiode
半導體光電子器件gd101型pin光電二極體詳細規范 -
Semiconductor optoelectronic devices detail specification for type gd3550y pin photodiode
半導體光電子器件gd3550y型pin光電二極體詳細規范 -
Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor
半導體光電子器件gti6型硅npn光電晶體管詳細規范 -
In the array scheme of with the diaphragm, the optimization of semiconductor optoelectric devices array forms a sky screens. while the bullel passing through the sky screens, the outputs of optoelectronic devices are amplified and coded, and then transmitted to the computer for processing
半導體光電件陣列方案是將半導體器件陣列和光闌合理配置，形成天幕，將彈丸過靶信號光電轉換、放大，經過編碼處理，最後送入計算機處理。 -
Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature
氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。 -
Iii - v semiconductors are important candidate materials for optoelectronic devices
-族化合物半導體是製作固體發光器件的重要材料。 -
When the amt concentration was below 3phr ( 3g amt / 100g epoxy resin ), the cte values of composites decreased from 0 to 20 % of that of pure epoxy, however, the light transmittancies in near ir region of composites were more than 80 % of that of the pristine epoxy, indicating that epoxy / amt exfoliated nanocomposites could be used as packaging materials for optoelectronic devices
對剝離型納米復合材料的熱膨脹系數進行了研究，隨著粘土含量的增加體系熱膨脹系數顯著下降，且仍保持較好的光學透明性。表明粘土納米復合是一種很好的制備高透光率和低膨脹系數的光電器件包裝用環氧樹脂基復合材料的方法。 -
Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices
被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。 -
This characteristic enables the realization of many novel optoelectronic devices based on this configuration. in this dissertation, a new type of electro - optic polymer modulator base on atr is introduced
本文即以衰減全反射結構為研究內容，提出用這一結構來實現一種新型光電子器件的思想? ?衰減全反射型聚合物電光調制器。 -
In all of the optoelectronic materials, cds was paid more attention for the excellent properties, which has commercial and potential applications in light - emitting diodes, solar cells, and other optoelectronic devices
在眾多半導體納米材料中， cds納米粒子以其優良的性能引起了許多科學家的極大關注。 cds是典型的-族直接帶隙半導體化合物，室溫下其禁帶寬度為2 . 42ev 。 -
An overview on the research and development of semiconductor blue - green optoelectronic devices
藍綠光半導體光電子器件的研究與發展現狀 -
Semiconductor optoelectronic devices detail specification for type gr8813 infrared emitting diode
半導體光電子器件. gr8813型紅外發射二極體詳細規范 -
Semiconductor optoelectronic devices. detail specification for type gr9413 infrared light emitting diode
半導體光電子器件gr9413型紅外發射二極體詳細規范 -
It makes more attention to the ultraviolet ( uv ) optoelectronic devices
因此，氧化鋅材料在紫外光電器件方面有巨大的應用潛力。 -
Semiconductor optoelectronic devices. detail specification for yellow light - emitting diode for type gf318
半導體光電子器件. gf318型黃色發光二極體詳細規范 -
The course is also intended to introduce students to noise models for semiconductor devices and to applications of optoelectronic devices to fiber optic communications
本課程也計劃介紹半導體元件的雜訊模型以及光電元件于光纖通訊的應用。 -
Sige si heterostructure optoelectronic devices
異質結光電器件 -
Inductively coupled plasma etching technology and its application in optoelectronic devices fabrication
刻蝕技術及其在光電子器件製作中的應用 -
Soi - based optoelectronic devices
集成光電子器件
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