oxidation etching 中文意思是什麼
oxidation etching
解釋
氧化腐蝕-
For the algaas / gaas vcsel fabrication, oxide - confined structure provid electrical and optical confinement. algaas / gaas vcsel fabricated by selective oxidation and selective etching
在vcsel器件研製方面，我們採用氧化物限制結構來對其的電流和光場進行限制。 -
The lowest threshold current 1. 8ma is achieved with continuous - wave at room temperature, the maximum output power is 7. 96mw. for the resesrch work on the fabrication procedures, we discusses selective oxidation and selective wet etching
利用濕法氧化和選擇性腐蝕相結合工藝研製出室溫連續工作的vcsel ，最低閾值電流為1 . 8ma ，輸出功率為7 . 96mw 。 -
( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels
胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。 -
Study on anodic oxidation etching of pan - based carbon fiber
基炭纖維陽極電解表面刻蝕工藝研究 -
The oils meguiar ' s uses are also important in maintaining the original condition of the paint by filling in the naturally occurring microscopic pores and surface imperfections thus preventing detrimental substances and elements as simple as water, or worse, acid - rain, from entering into these pores and microscopic surface imperfections thus causing oxidation and chemical etching
美光的這種油在護理原始的漆面在填補細微的小孔和不完整的漆面時，會防止有害的物質和成分，例如像水、或臟的水點、酸雨等滲入到小孔，導致氧化和化學腐蝕。 -
The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber, and guarantee the carry out of the reaction. the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber, it is the container which carry out the pcr reaction, and dna sample carry out amplification reaction here. the third part is to use the sputtering, photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction
首先，利用氧化工藝和lpcvd技術，生長sio _ 2掩膜層和si _ 3n _ 4絕緣層，以提高反應腔的熱效率，保證擴增反應的順利進行；其次，用濕法腐蝕和干法刻蝕相結合的方法加工微型腔體，使之作為dna樣品進行pcr擴增反應的容器；第三，用濺射、光刻等工藝在微型腔體底部製作微型加熱器和溫度傳感器，實現對反應腔體的加熱及其溫度的精確測量，提供pcr擴增反應所需的溫度條件。
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