oxide layer 中文意思是什麼
oxide layer
解釋
氧化層-
Effect of heat treatment on induced apatite deposition and bonding strength of the alkali treated titanium oxide layer for carbon carbon composite
碳復合材料上堿液處理氧化鈦鍍層誘導沉積磷灰石和結合強度的影響 -
4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate
4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。 -
Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。 -
So a conclusion can be got that the annealing in n2 raises the la2o2, stability. 3. the exact solution and wkb approximation are compared, the exact solution agrees with the wkb approximation in calculating the mono - layer sio2 tunneling current, but the wkb approximation is inappropriate for the dual layer oxide - lanthanum structure, while the exact algorithm can give a exact result
比較了wkb和精確解法計算柵介質隧穿電流的方法，精確解法在解決單sio _ 2層和wkb準經典近似有相同的結果，但是wkb不適合計算la _ 2o _ 3 / sio _ 2雙層柵介層的隧穿電流，而精確解法能精確地計算雙層柵介質隧穿電流。 -
Abstract : taken as materials, ammonium paramolybdate, molybdenum tri - oxide, molyb denum dioxide and molybdenum powder of different layers in thickness are reduced at different temperatures, and by analyzing the grain size, oxygen content and mo rphology of the molybdenum powders obtained, the effects of reduction processing on the grain size and oxygen content of the molybdenum powder of different layer s in the same boat are discussed
文摘:以仲鉬酸銨、三氧化鉬、二氧化鉬和鉬粉為原料，採用不同的溫度和不同的料層厚度進行了還原試驗，分析了所得鉬粉的粒度、氧含量和形貌，剖析了同舟內不同層次鉬粉的粒度和氧含量的變化規律。 -
A tio2 layer prepared by dipping in the stable tio2 sol was deposited on the surface of etched aluminum foils. after heat treatment, the composite oxide films were prepared by a normal formation
將鋁腐蝕箔在此穩定的溶膠中浸漬處理，高溫熱處理后將其陽極氧化，得到復合氧化膜。 -
The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer
模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。 -
Using v2 & 5 and alkylamines ( cs - cao alkyl chain ) as precursor, vanadium oxide nanotubes which have an unique structure that alkylamines intercalate into layers of tubes wall affecting the layer spacing were prepared. their layers spacing ranges from 1. 25 nm to 3. 82 nm according to the length of alkyl chain. moreover, the growth mechanism of vanadium oxide nanotubes have been investigated and 3 - 2 - id model was established to interpret the vanadium oxide nanotubes growth process. potassium niobate is a functional materials which can be used as photochemical catalysts. lt is well known that the catalytic activites are affected greatly by the surface area of catalyst particles on which the reaction take place
以系列烷基胺和五氧化二釩為原材料，通過簡單的水熱反應合成出了氧化釩納米管，這種納米管結構獨特，烷基胺作為模板劑內嵌入納米管管壁層間，成為支持納米管的骨架，並影響層間距大小，納米管管壁層間距隨著烷基胺碳鏈長度的不同在很大范圍內變化，通過採用不同碳鏈長度的烷基胺（ c _ nh _ （ 2n + 1 ） nh _ 23 n 20 ）作為模板，來控制氧化釩納米管的層間距，層間距可調控范圍從1 . 25nm到3 . 82nm 。 -
Buried oxide layer ( box ) - the layer that insulates between the two wafers
氧化埋層（ box ） -在兩個晶圓片間的絕緣層。 -
Immediately below the oxide film and often mingled with it in an intricate way is the true surface layer of the metal.
氧化膜的下面就是真正的金屬表層，氧化膜常常與金屬表面層以復雜的形式混合在一起。 -
Taken as materials, ammonium paramolybdate, molybdenum tri - oxide, molyb denum dioxide and molybdenum powder of different layers in thickness are reduced at different temperatures, and by analyzing the grain size, oxygen content and mo rphology of the molybdenum powders obtained, the effects of reduction processing on the grain size and oxygen content of the molybdenum powder of different layer s in the same boat are discussed
以仲鉬酸銨、三氧化鉬、二氧化鉬和鉬粉為原料，採用不同的溫度和不同的料層厚度進行了還原試驗，分析了所得鉬粉的粒度、氧含量和形貌，剖析了同舟內不同層次鉬粉的粒度和氧含量的變化規律。 -
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the souce and the drain
第一個重要的來自熱氧化組薄膜是柵氧化層，在它之下，源和漏之間就能形成導電通道。 -
In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。 -
In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1
本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。 -
Three kinds of different methods, namely anode oxidation, micro - arc oxidation and dc reactive magnetron sputtering, were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film
本文分別採用陽極氧化法、微弧氧化法和磁控反應濺射沉積氮化鋁薄膜的方法對功率電子器件用金屬鋁基板表面進行絕緣化處理。 -
This technique improves the speed of the transistors, but engineers have been pushing hard to do even better using something called silicon - on - insulator technology, which involves putting a thin layer of insulating oxide slightly below the surface of the wafer
這項技術提高了電晶體的速度，不過工程師為了追求更好，採用一種稱為絕緣層覆矽的技術，方法是在晶圓表面下緣加入薄薄一層絕緣氧化物。 -
After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。 -
The oxidation curve and sem images show that the oxygen evolution at the interface plays a key role in the transition from the compact al oxide layer to the porous membrane
分孔道的產生說明析氧反應不但在緻密膜電解液界面發生，而且在多孔膜孔壁電解液界面也同時發生。 -
In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2
為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。 -
Native oxide layer
自然氧化膜
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