phase transition temperature 中文意思是什麼

phase transition temperature 解釋
相變溫度
  • phase : n 1 形勢，局面，狀態；階級。2 方面，側面。3 【天文學】（月等的）變相，盈虧；【物、天】相，周相，...
  • transition : n 轉變，演變，變遷，變化；飛越；過渡期；【音樂】變調，轉調；【修辭學】語次轉變；【語法】轉換；【...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. No evidences of low - temperature phase transition were found for pbtio3, while the tetragonal - orthogonal and orthorhombic - rhombohedral phase transitions were present for batio3

    沒有發現鈦酸鉛存在低溫相變的證據，而鈦酸鋇則存在四方正交和正交三角鐵電相變。
  2. 5, both melting point ( tm ) and isotropization temperature ( tj ) of all the three series compounds change regularly with the carbon numbers of the end alkoxy group increased. there is a gradual increase in smectic phase length and in the smectic - nemetic transition temperature. at the same time there is a gradual decrease in nemetic phase length

    五，三個類型化合物16ia至16id 、 16ila至16lid 、 17ia至17id 、 17ila至17lid 、 18ia至18id和18ila至18lid的熔點和液晶態的清亮點均化合物分子中末端烷氧基增大逐漸降低；近晶相的溫度范圍和近晶相一向列相轉變溫度逐漸增大，而向列相的溫度范圍遞減。
  3. The measuring of low - temperature specific heat is an important and effective method to study the structure of electronic states, the atomic vibration of lattice, phase transition and structure of grain boundary

    低溫比熱測量是研究固體的電子能態結構、原子點陣振動狀態、相變、界面結構等信息的重要的且很有效的手段之一。
  4. It is found that the enhancement of the long - range interaction will result in the increment of the phase transition temperature, the increase of the critical transverse field and the decrease of the critical size

    採用超越平均場理論計算了長程相互作用對鐵電薄膜的物理性質的影響，發現長程相互作用的增強將使鐵電薄膜的居里溫度升高、臨界橫場增大、臨界尺寸下降。
  5. The entropy or number of states of system or subsystem are closely related to interaction of particles and energy level distribution, therefore, to study the temperature dependence of the specific heat may supply some important and useful microscopic information which may play an important role in understanding electronic structure, density of state, phonon spectrum etc. the specific heat measurements at low temperatures also play important roles in the finding of the third law of thermodynamics, the quantum theory of solid and bcs theory for superconducting etc. moreover, specific heat measurements help us to understand the different kinds of phase transitions ( such as : structural phase transition, magnetic phase transition, superconducting phase transition etc. ) and the scaling behavior near the critical point

    系統、子系統的熵或微觀狀態數與微觀粒子間的相互作用及能級分佈密切相關，因此研究比熱與溫度的依賴關系能夠提供被測量系統許多極其有用的微觀信息，對理解固體的電子結構、電子態密度、聲子譜等起著十分重要的作用。低溫比熱的測量和研究對熱力學第三定律、固體量子理論和超導bcs等理論的建立起到了積極的推動作用。比熱研究還有助於認識各類相變如結構相變，磁性相變，超導相變等及臨界點附近的標度規律。
  6. The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion

    在高溫部分，材料呈現小極化子跳躍形式輸運特徵；實驗研究了不同偏置電流對薄膜的相變影響，表明電場可以引起材料中磁性的變化和晶格畸變，導致相變溫度點向低溫方向移動；材料的光致相變研究表明光子能量、光強和極化方向對輸運性質有影響。
  7. The exact expression is n = 4 ", in which n is the stage of koch curve. since we only consider one generator in computation process, so we simplify it as n = 4 ). the critical point of this kind of koch curve is zero, also called zero temperature phase transition, and this is the character of all the limited branching systems

    無分支科赫曲線是一種典型的分形，前人的研究都局限於n = 4 （ n是用線元，面元，或體元覆蓋分形系統所需要的覆蓋次數，確切的應該寫成n = 4 ~ n ，其中n為科赫曲線的級，但我們在重整化群計算時只考慮一個生成元，所以簡化為n = 4 ）情況，這種科赫曲線的相變點為零，是一種零溫相變，這也是有限分岔系統的相變特徵。
  8. It is found that the pyroelectric coefficient and susceptibility increase with the decrease of the magnitude of the long - range interaction and the interfacial coupling when the temperature is lower than the phase transition temperature

    我們發現，在相變溫度以下，隨著雙層薄膜的界面耦合的減弱，鐵電雙層薄膜的熱電系數和介電極化率增加。
  9. Ii ) with the increase of the long - range interaction and the interfacial coupling, the pyroelectric coefficient before the phase transition temperature decreases

    另外，隨著長程相互作用以及界面耦合強度的增強，相變溫度以下的熱電系數明顯減小。
  10. We obtain that i ) with the increase of the phonon - pseudospin interaction and the thickness of the superlattice, the phase transition temperature of the superlattice will increase. ii ) the increase of the phonon - pseudospin interaction leads to the change of the number of the pyroelectric peaks in the temperature curve of pyroelectric coefficient and to the change of the pyroelectric coefficient

    研究發現，聲子與贗自旋的相互作用會影響鐵電超晶格熱電峰的數目以及熱電系數的溫度曲線的形態，而且聲子與贗自旋耦合作用的增強以及超晶格尺寸的增大都會使整個材料的相變溫度增加。
  11. We find that i ) with the increase of the long - range interaction, the interfacial coupling and the thickness of one period, the phase transition temperature of the ferroelectric superlartice increases

    我們發現，隨著長程相互作用和界面耦合作用的增強以及鐵電超晶格尺寸的增大，整個材料的相變溫度升高。
  12. It is found that starch microgel has microporous network structure and environmental responsiveness, moreover, its volume phase transition temperature ( tc ) is around 37, which are researched by the characterization of tem, dls, light refraction and other techniques. so, starch microgel with those advantages can be expected to use as a targeting drug carrier

    藉助透射電鏡、動態光散射、光折射等技術的表徵，發現所制備的澱粉微凝膠具有微孔網路結構和環境敏感性，而且相體積轉變溫度（ t _ c ）約37 ，所制澱粉微凝膠的這些優越性可望作為靶向藥物載體。
  13. On the other hand, relationship between doping concentration, phase transition temperature, magnitude of resistance change and hysteresis width was investigated

    在此基礎上，本文進一步探討了摻雜濃度與vo _ 2薄膜相變溫度、電阻突變數量級以及熱滯寬度的關系。
  14. Then, the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature, magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed

    （ 2 ）本文以摻鋯為例，探討了不同的真空退火溫度對vo _ 2薄膜的相變溫度、電阻突變數量級以及熱滯寬度有何影響。
  15. 5 ) as the deformation strain increases the reverse transformation temperature and thermal hystersis of tini film increase on the first heating, while the martensitic transformation temperature decreases and r phase transition temperature is constant

    隨預應變量增大， tint薄膜的第一次逆相變溫度升高，相變熱滯增大，馬氏體相變溫度降低， r相變溫度無明顯變化。
  16. Results show that the increase of semiconductor - metal phase transition temperature and the decrease extent of resistance is linear to zr ~ ( 4 + ) doping content, while the hysteresis width of vo _ 2 thin film fluctuates with zr ~ ( 4 + ) doping content

    實驗結果表明:隨zr含量的增加， vo _ 2薄膜的半導體-金屬轉變溫度和電阻突變數量級呈線性下降，同時，隨摻雜量的增加， vo _ 2薄膜的熱滯寬度的變化規律是先減小后增大。
  17. The magnetic ground state of lafe _ ( 11. 4 ) al _ ( 1. 6 ) cx compound changes from antiferromagnetic to ferromagnetic for x > 0. 06 and the curie temperature increased monotonously with the increase of carbon content. a large magnetic entropy change was obtained near the phase transition temperature and the refrigerant capacity is good

    當碳含量高於0 . 06時，化合物的基態由反鐵磁變為鐵磁且居里溫度隨c含量的增加向高溫區移動，在各自相變溫度附近保持較大磁熵變，具有良好的磁製冷能力。
  18. Since 1980s research about doped vo _ 2 matrix has shown that doping could alter the phase transition temperature of vo _ 2 thin film, and as a result, influence on its optical and electrical properties

    從上世紀八十年代開始的對vo _ 2的摻雜研究表明:摻雜能明顯改變vo _ 2薄膜的相變溫度，進而影響其光電性能。
  19. Compared with testing results at different annealing temperatures ranging from 350 to 500 c, it was found that vo _ 2 film annealed at 450 c exhibits lower phase transition temperature and significant resistance change

    通過對比不同退火溫度下的測試結果可知:經450退火后的摻雜vo _ 2薄膜與其它退火溫度所得的vo _ 2薄膜相比，具有較低的相變溫度以及較為明顯的電阻突變數量級。
  20. On the base of tg - dta, found the yb : kgw crystal has very good thermal stability under 1100, which has two obvious absorption peak at 1088 and 1025, contrast with the pure kgw crystal ( melting point at 1005, phase transition temperature from tetragonal system to monoclinic is 1075 ), we know the yb : kgw crystal ' s melting point is the absorption peak at 1088, phase transition peak from tetragonal system to monoclinic is the absorption peak at 1025

    利用tg - dta對所生長的yb ： kgw晶體測定說明，其在1100以下的熱穩定性是很好的。 yb ： kgw晶體在1088和1025有兩個明顯的吸收峰，判斷在1088處較寬的吸收峰是yb ： kgw晶體的熔點， 1025處的吸收峰是yb ： kgw晶體從四方晶系向單斜晶系的相轉變峰。
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