phi 中文意思是什麼

Scheler ' s sociology of knowledge is, in a very eal sense, ancilla philoso - phi - ae, and of a very specific philosophy to boot

值此，謝勒所謂的知識社會學就某種意義來說，只是哲學的附屬品罷了。

Someday you may be a phi beta kappa

有一天你也可能成為斐陶斐的一員。

Phi beta kappa spread to colleges throughout new england

斐陶斐榮譽學會后來擴展到新英格蘭地區的大學里。

Preprocessing of phi - 3 hyperspectral data

3高光譜數據預處理

Application of vegetation spectral features based on phi imaging data

高光譜影像的植被光譜特徵應用研究

The phi losophy and passion of hui studies on dai zhen ' s enlightment thought

以戴震為例看徽學的啟蒙精神

[ could that name also be linked to the phi ratio of sacred geometry

這個名字可以與神聖幾何學的黃金比率相聯系呢？

The maps phi and psi which are introduced here are examples of " isogenies "

本節引入的映射和是「同源」的實例。

Secondly, we make an inquiry of the basic content of locke ' s phi - losophy of right

接著，對洛克法哲學思想的基本內容進行了探究。

Lau has been elected a member of phi beta kappa, a member of tau beta pi, a fellow of the econometric society, an academician of academia sinica, a member of the conference for research in income and wealth, an overseas fellow of churchill college, cambridge, england, an honorary member of the chinese academy of social sciences and an academician of the international eurasian academy of sciences

劉教授早在一九六六年即建立了他的第一個中國計量經濟模型，並不斷加以改良。在有關中美貿易平衡的爭論中，劉教授對中國經濟進行分析，並提供了與眾不同的觀點。隨著中國大力發展對外貿易，劉教授的研究亦顯得愈來愈重要。

For the difference of the basis of thought and the focus of study, reconceptualists were divided into two schools, phi lo s op hic auaestheti c al and s oc ial / po l iti c al v is ion. the forme r sti c ks to the pni los o p hic ai / ae sthetic ai c ritic s to awaken and hei ghten the s elf c ons c io usnes s, to the development of currere

由於思想基礎和關注焦點的不同，概念重建學派形成了兩翼，一翼堅持哲學/美學的視野，著眼于個體意識覺醒與提升的哲學/美學批判和存在經驗的發展，一翼堅持社會/政治視野，著眼于社會意識形態的批判與社會公正的建立。

Special thanks to mr. lee phi do, for initiating and facilitating this noble deeds

另外，特別感謝lee phi do先生的拋磚引玉及促成此次的善舉。

Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige

Plasma immersion ion implantation ( phi ) seems to be an alternative approach to reduce the manufacture cost of soi wafers due to its large ion current and independence of implantation time to the wafer size

等離子體離子注入（ p ）技術由於其強束流和大面積注入方式而有希望在soi材料制備方面獲得突破。

A " consultation zone " will be delineated for the phi concerned. the boundary and size of the " consultation zone " are determined having regard to the topography, the phi type and its hazardous material storage capacity

此外，潛在危險裝置附近會劃定一個諮詢區，范圍及面積視乎地形、潛在危險裝置的種類和危險物料貯存量而定。

An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。

There may be inadequate godown facilities to store the dangerous goods. the forecast that 25 - 30 ha of land would be required for phi facilities should be reviewed

可能沒有足夠的倉庫儲存危險物品。應檢討預計興建具有潛在危險裝置所需25至30公頃土地是否足夠。

The hong kong planning standards and guidelines ( hkpsg ) stipulate that the land use in the vicinity of a phi must comply with the relevant standards set out therein so as to minimise the risk posed by the phi to residents nearby

根據《香港規劃標準與準則》 ，任何潛在危險裝置附近的土地用途必須符合《香港規劃標準與準則》列明的標準，以減少這些裝置對附近居民構成的風險。

Her outstanding achievements had won her numerous scholarships and honours, notably the phi kappa lambda honour from the usa national music honours association

1998年獲取音樂碩士后，余氏于該校繼續進修，現為其哲學博士候選人，主修音樂理論。

Jonathan holds an mba from the university of chicago and a ba with honors in economics from claremont mckenna college, where he graduated phi beta kappa

Jonathan擁有美國芝加哥大學university of chicago的企管碩士學位，並以優異成績取得克雷蒙麥肯納學院claremont mckenna college的經濟學士學位，畢業時並獲phi beta kappa之榮譽。