photoelectronic 中文意思是什麼

photoelectronic 解釋
光電子的
  1. Established in 1995, suzhou branch undertook lump sum contract service fukuda metal co. ltd. and rebesto friction products, and design works for more than 10 projects, such as panasonic electrical, nokia telecom, epson, amd, fujitsu telecom, gao de electronic, etc. having rich experiences on engineering design, supervision, lump sum contract. in recent years, with increasingly improvement on design and work scopes, suzhou branch provided design works for large projects such as jin xiang electronic, shang hai beilin, he jian technology, you da photoelectronic, nanjing tong bao, tai shan photoelectronic, etc. and also undertook lump sum contract for vertex

    先後完成了福田金屬有限公司雷貝斯托生益科技喜美謳電子材料蘇州住礦電子等項目的總承包以及蘇州松下電工諾基亞電訊愛普生amd富士通通信高德電子友達光電和艦科技金像電子南京統寶泰山光電上海貝嶺騰光電等數百個項目的設計任務，在工程設計監理項目總承包各方面都具有豐富經驗。
  2. On the basis of photoelectronic dynamics, an energy model at room temperature that describes the cubic silver halide microcrystals not doped or doped with metal ion complex at deferent doping amounts is proposed, and then a series of differential equations describing the relationship between carriers number are set up

    本工作以光電子動力學理論為依據，建立了一種描述純鹵化銀微晶及摻有不同濃度金屬離子絡合物的鹵化銀立方體微晶在室溫下的能級模型，由此生成了一組描述粒子數關系的微分方程。
  3. It has broad application prospect in the following fields such as microelectronics, photoelectronic devices, large screen flat panel display, field emitter array, acoustic surface wave device, photon crystal, light waveguide array, holographic honeycomb lens and micro - optical element array, micro - structure manufacture, fabrication of large area grating and grid of high resolution, photoresist performance testing, profile measurement and metrology, etc. the paper only involves the primary research of interferometric lithography

    在微電子、光電子器件、大屏幕平板顯示器、場發射器陣列、表面聲波器件、光子晶體、光波導陣列、全息透鏡和微光學元件陣列、微結構製造，高分辨、大面積光柵和網格製造，在抗蝕劑性能測試、面形測量和計量等領域，干涉光刻技術都具有廣闊的應用前景。
  4. It is a good candidate for the high quality photoelectronic and microelectronic devices, such as fiber optical communication lasers, photoelectronic detectors, high electron mobility transistors and electro - optic modulators

    它是制備性能優良的光電子與微電子器件，如光纖通訊激光器、光電探測器、高電子遷移率晶體管、電光調制器等的主要選擇對象之一。
  5. It is not only the satisfactory substrate used for the epitaxy growth of infrared detector material hgcdte, but also attractive candidates for the manufacture of high quality x - ray or y - ray detectors, photoelectronic modulator, solar cell, and laser windows etc. no matter what the crystal is used as detectors or epitaxy substrate, it is of vital importanteto obtain high quality cdznte crystals with perfect surface

    它不僅是生長紅外探測器材料hgcdte最理想的外延襯底，而且還被廣泛用於制備高性能x射線或射線探測器、光電調制器、太陽能電池和激光窗口等。獲得高性能、高質量的czt晶體是至關重要的。無論是作探測器還是作外延襯底等都要求它的表面質量要非常高，因為表面質量會直接影響到器件的性能。
  6. Semiconductor materials with self - organized quantum dot structure play a very important role in photoelectronic and microelectronic field

    半導體自組織量子點材料在光電子與微電子器件領域具有重要的作用。
  7. Ni guo qiang : electronic optics, photoelectronic imaging technique, real time image processing and fusion technique

    倪國強：電子光學，光電成像技術，實時圖像處理及融合技術。
  8. Organic electroluminescent ( oel ) devices are one of hot research project because of great interests in both science and applications among photoelectronic field. people invent a series of luminescent materials and devices, but the emission from exciplex is usually found in oel devices

    有機電致發光（ oel ）近年來因在科學研究和實際應用領域的巨大效益而成為國際上研究的熱點之一，人們為此開發了各種各樣的發光材料和器件。
  9. Hubei guangtong photoelectronic system co., ltd

    湖北外資網
  10. Injection and assembly for precision parts of photoelectronic and optic fiber

    矽晶、石英、超硬材質加工
  11. Cdznte ( czt ) crystal material is widely concerned for its excellent photoelectronic performance

    Cdznte （ czt ）晶體材料由於其優異的光電性能，得到了人們的廣泛注意。
  12. The progress in quantum dot synthesis, its spectroscopic and photoelectronic properties, and its potential application to life science are reviewed

    現就量子點的光學特性、制備方法以及在生物學中的研究進展和應用前景作一簡要綜述。
  13. The formation of self - assembled interfacial n - dodecanethiol monolayer and its effect on the corrosion protection of epoxy coating were evaluated using the x - ray photoelectronic spectroscopy, electrochemical impedance spectroscopy, impedance - time transition, and phase angle - time transition method

    採用x射線光電子能譜、電化學阻抗譜、阻抗時間譜和相位角時間譜等方法對硫醇自組裝界面層及其對塗層腐蝕防護性能的影響進行了研究。
  14. The morphology, chemical compositions, crystal structures and some properties of these obtained nanowires were systemically characterized. < wp = 6 > because of their novel properties and unique structures, one - dimensional nanostructrue semiconductor materials have generated a tremendous amount of interests in fundamental and potential promising applications in electronic and photoelectronic devices. we fabricated cdse, te and cdte nanowires by direct current ( dc ) electrodeposition in porous anodic aluminum oxide ( aao ) templates

    本論文採用電化學模板合成法制備出了幾種新型的納米線，並對它們的形貌、組成、晶體結構及其他一些性質進行了表徵；發展了一種用紫外可見光分光光度法分析電沉積在導電玻璃上的ni - fe合金鍍層的方法；用模板脈沖電沉積法制備了fe20ni80 / ag多層納米線，並對它的形貌進行了初步表徵。
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