plane of substrate 中文意思是什麼

plane of substrate 解釋
平面襯底
  • plane : n 懸鈴木屬樹木。n 1 平面，水平面，面。2 （知識等的）發達程度，水平，階段。3 【航空】機翼面；〈常 ...
  • of : OF ＝Old French 古法語。
  • substrate : n. 1. 底層，地層。2. 【無線電】（半導體工藝中的）襯底，基底。3. 【生物學】（生態學中的）基層；【生物化學】受質；被酶作用物。
  1. Large amount of hydrogen was disadvantage to the basal plane orientation, but it is helpful for the c axis paralleling to the substrate

    大量h的存在不利於基面平行襯底的取向的發生，但能夠滿足c軸平行襯底的條件（在一定偏壓下） 。
  2. 2 we studied the films with raman polarization spectrum. the peak intensity in the polarization spectrum of the films with basal plane not oriented on the substrate changes with the polarization condition

    張生僅北京工業大學博士學位論文摘要2利用raman偏振光譜研究了薄膜的性質，對基面非平行襯底的取向， raman譜隨偏振條件的不同而變化。
  3. E ) with the help of pecvd, we found that high substrate temperature is advantage to the basal plane orientation. higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly

    E ）高溫有利於基面平行於襯底的取向，在高的生長溫度下吸附於襯底表面的沉積粒子能夠迅速遷移到二維核的位置，並使粒子有足夠能量調整位置。
  4. C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films. low bias is helpful for the basal plane orientation, while under high bias the films shows that the c axis of bn was nearly parallel to the substrate

    C ）偏壓或離子轟擊對取向有重要影響，低偏壓有利於形成基面對襯底平行的取向，而在高偏壓下，薄膜表現為c軸平行襯底的取向。
  5. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  6. Components, structure and surface morphology of the resulted films were identified by fourier transform infrared ( ftir ) spectroscopy, x - ray diffraction ( xrd ) and scanning electronic microscopy ( sem ). the analyses showed the content of cubic boron nitride in the resultant films on substrates was rather high and crystal particles of c - bn with uniform size, smooth crystal plane and regular shapes ( quadrangle and hexagon ) densely arrayed on the substrate

    傅里葉轉換紅外吸收（ ftir ）光譜儀、 x射線衍射（ xrd ）儀和掃描電鏡（ stm ）的測量結果顯示，基底上的bn膜中立方相含量很高，且晶粒大小均勻、排列緻密，晶形呈規則的四角和六角形。
  7. C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line. over the years, sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led

    C -軸切型的藍寶石是近年來應用在生長氮化鎵藍光led重要的基材。兆晶科技新近增加此產品以因應光電業者殷切的需求。
  8. The compact version of the plant is essentially composed of a 2 - stage plane - tary extruder, 3 - roll calender, embossing unit, take - off and cooling unit, automatic unwinder for the substrate, pull unit, thickness gauge and control system and automatic winder

    該生產線的緊湊型主要由一個2段行星螺桿擠出機、三輥壓延機、壓花機構、接取和冷卻機構、基材自動退卷機、牽引機構、厚度測量計和控制系統及自動卷取機組成。
  9. The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique

    =本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。
  10. The antenna is obtained by extending the longitudinal strip of the fin - line, and etched on a metallized dielectric substrate. it is operating at ka band ( center frequency : 34ghz ), which has a good agreement between simulated and measured results. its e - and h - plane 3db main lobe beamwidth are 79. 25 and 80. 03 degrees respectively with sidelobes less than - 10db

    天線工作的中心頻率為34ghz ， e面和h面測試方向圖主瓣寬度分別為79 . 25o和80 . 03o ，旁瓣電平均小於- 10的db ，模擬和試驗結果基本一致，所設計天線的各項指標經測試基本達到要求。
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