plasma ion source 中文意思是什麼

plasma ion source 解釋
等離子體光源
  • plasma : n. 1. 【生理】血漿；淋巴液。2. 【生物學】原生質。3. （做藥膏用的）膏漿。4. 【礦物】半透明的綠玉髓。5. 【物理學】等離子（體）；等離子區。
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • source : n 1 源頭，水源，源泉。2 根源，本源；來源。3 原因；出處；原始資料。4 提供消息的人。5 血統。vt 〈美...
  1. During ion source operating, alternating axial magnetic field and azimuthal electric field in discharge tube ionize hydrogen gas purified by hot palladium pipe, and form plasma, hi fifties year, research reports studied on rf ion source are numerous however most of them are concerned about application, and research reports relevant to discharge theory or experiment model are unfrequent

    離子源工作時，放電空間交變的軸向磁場和渦漩電場激發放電管中經鈀管純化后通入的氫氣電離，形成等離子體。 50多年來，關于高頻離子源的研究報告很多，但是，這些研究主要都集中在應用研究方面，有關高頻無極環形放電離子源的理論與實驗模型研究不是很多。
  2. Diamond - like carbon gradient film on ti6a14v alloy substrate have been prepared by means of plasma source ion implanted - ion beam enhanced deposition ( psii - ibed ). for potential applications as artificial joint materials and artificial cardiac valve materials, its trobological performance and hemocompatibility has also been evaluated in the present ph. d. thesis

    本研究採用等離子源離子注入?離子束增強沉積技術（ psii - ibed ）制備了鈦合金基類金剛石梯度薄膜材料，對類金剛石梯度薄膜這一新型人工關節材料和人工心臟瓣膜材料的生物摩擦學性能和血液相容性進行了研究和評價，研究了摩擦磨損對材料血液相容性的影響。
  3. In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

    本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。
  4. ( 3 ) chapter v. plasma characteristics of rf ion source is investigated. a zero - dimensional numerical dynamic colisional radiative atomic and molecular ( cram ) model is suggested to simulate the microphysical process. all species " population number densities in plasma are calculated in non - thermodynamics equilibrium condition, and proton content in extracted ion current are measured with 60 ? magnetic analyzer

    （ 3 ）提出了高頻離子源等離子體的零維cram模型（ collisionalradiativeatomicandmolecularmodel ） ，計算了非平衡態（ nte ）下等離子體中分子、電子、離子、基態原子、激發態原子等粒子濃度，並在zf - 200kev中子發生器上，用60磁分析器實驗測定了引出束流的質子比。
  5. ( ii ) charging effects on temporal and spatial evolution of dusty plasma sheath in plasma source ion implantation. the temporal and spatial evolution of a dusty plasma sheath in plasma source ion implantation has been investigated with a fluid theory and a self - consistent dust - charging model. a negative potential pulse is introduced to form the plasma sheath

    （ ）塵埃粒子的充電效應對等離子體源離子注入（ ps ）鞘層時空演化的影響採用流體模型及自洽的塵埃粒子充電模型，我們研究了等離子體源離子注入時的塵埃等離子體鞘層的時空演化。
  6. Among of them, radio - frequency ion source is in most wide used for the reasons of its high proton content, long life and reliable performance, etc. h - type radio - frequency ion source is a kind of plasma ion source

    其中，高頻離子源以其很高的質子比（ 70 - 90 ） 、長壽命和可靠的性能而得到了最廣泛的應用。高頻h型放電離子源屬于等離子體離子源。
  7. Plasma characteristics of a rf ion source are investigated by emission spectroscopy. the spatiotemporal spectral line intensities of the first three atomic lines in hydrogen bahner series ( = 656. 28, 486. 13, 434. 05nm ) of rf ion source plasma, are measured with calibrated optical multichannel analyzer ( oma ). some plasma parameters, including electron temperature, hydrogen atom density and hydrogen ion density, are calculated and analyzed using partial local thermodynamic equilibrium ( plte ) theory and abel transform

    實驗採用絕對定標后的光學多道分析系統（ oma ）測定了離子源等離子體不同時間和空間位置的氫原子巴耳末譜線系中前三條譜線（ = 656 . 28 ， 486 . 13 ， 434 . 05nm ）的強度，並採用plte的理論和abel變換方法，計算出了高頻離子源等離子體的電子溫度、氫原子濃度、氫離子濃度等參數在放電的不同階段和徑向分佈情況，並進行了簡要分析。
  8. Research on deposition diamond - like carbon films with end - hall plasma ion source

    端部霍爾等離子體源沉積類金剛石膜的研究
  9. The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage, frequency, gas flux influenced sp3 bond ratio of dlcs, the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage, reducing frequency, appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic, the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs, but it caused the surface morphology to become asperity

    研究結果表明： （ 1 ）用全方位離子注入技術能夠制備出類金剛石膜。在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓增加、頻率降低和適中的氣體流量可以制備出含sp ~ 3鍵較多的類金剛石膜；同時發現用全方位離子注入技術制備的類金剛石膜含有大量的sic成份，這對薄膜的性能（例如硬度）影響很大；用全方位離子注入制備的薄膜其結合力得到增強，但薄膜的表面形貌差。
  10. Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation

    附加電極半徑對空心圓管端點附近離子注入劑量的影響
  11. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  12. This paper mainly discusses the performance specification of plasma source ( gis ), technology and quality of tio2 and sio2 coatings and the technology for large antireflection coatings deposited with plasma - iad. the research shows that the index of optical coating increases remarkably by using plasma ion assisted deposition and approach to the massive material further, the coating structure is more compacted than the one obtained through conventional deposition method and the adhesive power is high as well

    研究了用於輔助鍍膜的等離子體源（ gis ）的結構原理及性能指標，並從光學特性、顯微特性和機械特性三方面著手，研究了使用等離子體源所做的單層tio _ 2膜和單層sio _ 2膜的成膜工藝與質量。
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