plasma probe 中文意思是什麼
plasma probe
解釋
等離子區探測器-
We tested the ecr deposition system and plasma parameters with the help of langmuir probe and faraday cup
我們還介紹了bn薄膜的特性、應用和bn體系相關系的研究。 -
This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。 -
In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma
重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈；分析了不同基團的相對密度隨宏觀放電條件（微波輸入功率、放電氣壓、源氣體流量比）的變化規律；探討了等離子體中各種基團的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜並通過傅立葉變化紅外吸收光譜（ ftir ）的測量得到了薄膜中鍵結構的信息；分析了a - c ： f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。 -
In situ diagnosis of plasma environment for synthesizing diamond film was conducted by langmuir single probe and optical emission spectroscopy. the mechanism of diamond growth was investigated and the n - type diamond was deposited by glow plasma assisted chemical vapor deposition ( cvd )
本文通過langmuir單探針和光發射譜對合成金剛石薄膜的等離子體環境進行了原位診斷；初步探討了金剛石薄膜生長的動力學過程；並採用輝光等離子體輔助化學氣相沉積（ cvd ）技術制備得到了n型金剛石薄膜。 -
In this paper, firstly, monolithic materials cosb3 and bi2te3 were prepared by sparkle plasma sintering ( sps ) respectively, and at the same time the microstructure of cosb3 and bi2te3 were studied by sem ; the seebeck coefficients and electrical conductivities of monolithic materials were measured by standard - four - probe method ( ulvac zem - 700 ) in a he atmosphere simultaneously, and their thermal conductivities were investigated by laser flash method ( tc - 7000 ) in vacuum. secondly, the junction temperature of graded bi2te3 / cosb3 thermoelectric materials was optimized based on the thermoelectric transport properties of monolithic materials, also when graded materials were used in the temperature difference ranging from 300k to 800k, the length ratio of monolithic materials cosb3 and bi2te3 were optimized in theory. thirdly, graded bi2te3 / cosb3 thermoelectric materials were prepared by two - step sps sintering, and the relationship between its average seebeck coefficients and temperature were calculated by theory mo del
均質材料cosb _ 3和bi _ 2te _ 3的電導率和seebeck系數採用標準四端子法于he氣氛下在zem - 1上同時進行測量；熱導率採用激光微擾法（ tc - 7000 ）于真空狀態下進行測量；其次，在對均質材料cosb _ 3和bi _ 2te _ 3熱電傳輸特性研究的基礎上，對結構梯度bi _ 2te _ 3 cosb _ 3熱電材料的界面溫度進行了優化；為了使結構梯度bi _ 2te _ 3 cosb _ 3熱電材料在300k至800k的溫度范圍內具有最佳的熱電性能，本研究同時對梯度結構熱電材料當中均質材料cosb _ 3和bi _ 2te _ 3材料的長度進行了優化設計；第三，通過兩步放電等離子燒結的方法制備出了結構梯度bi _ 2te _ 3 cosb _ 3熱電材料；採用理論計算的方法研究了梯度結構熱電材料平均seebeck系數和溫度的關系；同時為了驗證設計的結果，本論文對結構梯度bi _ 2te _ 3 cosb _ 3熱電材料的開路輸出電壓和熱端溫度之間的關系及梯度材料在300k至800k的溫度范圍內使用時的功率輸出進行了相應的研究。 -
In the present research, scanning electron microscope ( sem ), laser raman spectroscopy ( lrs ), x - ray photoelectron spectroscopy ( xrs ), x - ray diffraction ( xrd ) and electron probe micro analysis ( epma ) were utilized to investigate the difference in micro - structure and elements distribution between domestic and foreign pdcs. combined with analysis on current manufacturing process, the mechanism for the difference was discussed. scanning electron microscope ( sem ), laser granularity analysis, atom emission spectroscopy ( aes ) and plasma emission spectroscopy ( icpaes ) are also utilized to investigate the grain shape and impurities of key material - diamond power
本課題採用掃描電鏡、拉曼光譜、光電子能譜、 x -射線衍射分析、電子探針等方法分析了國內外聚晶金剛石-硬質合金復合片在微觀組織結構、元素成分分佈方面的差異，結合對現有燒結工藝的分析，研討了造成這些差異的機理；採用掃描電子顯微鏡、激光粒度分析、原子發射光譜、等離子發射光譜等方法對關鍵原材料-金剛石微粉的晶形、雜質含量進行了比較分析測試。
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