plasma purity 中文意思是什麼
plasma purity
解釋
等離子體純度-
In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also
在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。 -
The x - ray diffraction, scanning electronic microscope and the squid were used to characterize the properties of the mgb2 core in mgb2 / fe tapes and wires. the effect of the proportion of mg, b and sic as well as the sintering parameters on the phase formation, microstructure and the critical current densities of mgb2 / fe tapes and wires was discussed in details. the results showed that the high purity of mgb2 core could be synthesized by both the traditional vacuum sintering and the sparking plasma sintering and the vacuum sintering environment restrained the oxidation of mg effectively
相對于傳統真空燒結， sps燒結方式成相速度快、樣品晶粒細小均勻、 mgb2超導芯緻密性好、晶間連接優良，因而sps燒結樣品的臨界電流密度明顯高於傳統真空燒結樣品，其中未摻雜的帶材樣品經過sps800 ， 15分鐘燒結后，自場下的臨界電流密度jc值在10k時達到8 . 64 105a / cm2 ，而且隨著測量溫度和外加磁場的增加， sps燒結樣品的臨界電流密度下降率比傳統真空燒結樣品緩慢，在20k ，自場時為5 . 97 105a / cm2 ， 20k ， 3t時，臨界電流密度值仍大於104a / cm2 。 -
Zro2 ( 6 % y2o3 ) ( ysz ) nano - powders were perpared by dc non - transferred arc plasma systems. based on the tem and xrd analysis results of powde, the particle size of tsz was about 20nm with high purity more than 98. 7 %
採用直流電弧等離子體「噴射法」 ，以草酸鹽干凝膠粉為原料，制備出了平均尺寸為為20nm的ysz納米粉末，粉末純度大於98 . 7 。 -
Using metal for reaction material, sno2 and tio2 nano - powders were obtained through dc transferred arc plasma with purity more than 98 % and average size of particle being l00nm and 60nm, in the same time the particle size could be adjusted according to the cooling medium
用直流電弧等離子體「蒸發?凝聚法」以金屬塊體為原料，制備出了純度大於98平均粒度分別為100nm和60nm的sno _ 2及tio _ 2納米粉末，並且粉末的粒度可以通過調整冷卻介質來加以控制。 -
The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream
實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。
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