pn-junction 中文意思是什麼
pn-junction
解釋
pn接面-
This paper analyses the numerical simulation problems of the semiconductor devices deeply. a one dimensional pn junction diode is worked out satisfyingly by the recursive method with the matlab5. 3 software
論文深入的分析了半導體器件的數值模擬問題，利用matlab5 . 3等計算機工具，用解三對角矩陣方程的遞歸演算法，實現了pn結二極體的一維求解，取得了比較滿意的結果。 -
Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes
肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。 -
Pipework. dismountable connections with a spheroconical junction. nominal pressure pn 10
管道.球形連接的可拆卸連接件.公稱壓力pn10 -
In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points
在器件設計過程中，在源端和漏端都採用了多晶場板技術，減小了表面pn結和nn +處的峰值電場，避免了器件在這兩處過早擊穿。 -
It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established
通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。 -
The impacts of the substrate pn junction isolation on the inductor quality factor ( q ) are studied and experimental results show that a certain deep substrate pn junction isolation achieves good improvement
結果表明這種方法是可行的， b一一定深度的襯底pn結隔離能有效的使q值提高。 -
A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented. the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors. the substrate pn junction can be realized in standard silicon technologies without additional processing steps
提出了一種新的方法來減小硅襯底損耗提高集成電感的q值：在硅襯底形成間隔的pn結隔離以阻止渦流減少損耗，這種方法工藝簡單且與常規硅集成電路工藝兼容。 -
At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 -
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of pn junction and schottky junction
為了理解有機靜電感應三極體的肖特基柵極原理，本文在第二章闡述了pn結和肖特基結的特性。 -
Based on this model, it was presented that how to select the thickness of epilayer, the doping concentration of epilayer, schottky contact, the width of pn grid, the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics
基於此模型，提出在對正反向特性進行折衷時，如何選擇合適的外延層摻雜濃度和厚度、肖特基接觸和pn結網格寬度、 pn結深度和摻雜濃度。 -
According to the analysis of physical quantities in the body, we got a conclusion that the effect of pn junction on schottky is through its depletion layer and the gap between two pn junctions
通過對器件體內各物理量的定量分析，得出pn結對肖特基的作用是通過其耗盡層和兩pn結之間的間隙來影響肖特基的導電溝道這一結論。 -
Using this method, the interface characteristics of angle beveled mesa structure high - voltage silicon pn junction protected by organic materials or inorganic passivation films were measured
採用此方法，測量了臺面型高壓硅半導體器件的無機鈍化和有機保護界面的表面復合速率。 -
Based on the systematic study and analysis, alight spot scanner photo - current ( pc ) measurement technique was set up to measure the interface properties of silicon pn junction
摘要通過系統的研究分析，建立了應用光探針的光電（ pc ）測量方法，應用鏡像法和點源產生近似原理建立了物理模型，並進行了系統的理論分析。 -
Discussion is made on photocurrent output, injection current output and zero current output for photoreceiving pn junction by means of i - v equation of photoreceiving pn junction. further survey is carried out on physical elements of the injection photodetector followed by description of some experiment subjects
本文推導金屬球的雷達散射截面，同時討論金屬球散射的三個區域，金屬球本身是一個良好的雷達目標，同時又是測量目標雷達截面的參考標準，因此還研究了金屬球的尺寸、導電性能和球殼的厚度，給出了測量結果 -
The one dimensional continuity equations of n - on - p planar pn junction are solved at different boundary conditions. generalized solutions of photocarrier concentration are given in this paper
摘要對一維情況下平面pn結的連續性方程進行了求解，給出了不同邊界條件下光生載流子濃度的一般形式解，並對結果進行了分析討論。 -
From the experiment results and the normalization results, the surface recombination velocities of silicon pn junction were obtained
通過測量結果和計算結果的歸一化比較，獲得了其表面復合速率。
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