polycrystalline growth 中文意思是什麼

polycrystalline growth 解釋
多晶生長
  • polycrystalline : 多結晶體
  • growth : n. 1. 生長，成長，發育，發展。2. 栽培，培養。3. 生長物，產物；【醫學】瘤，贅生物。4. 【經濟學】（資本價值與收益的）預期增長。
  1. Polycrystalline diamond films with preferred orientation by adopting assisted - bias hfcvd technique are prepared, and the mechanisms of the nucleation and growth of the films are studied. in addition, application of the film to the heat sink of power electron device is discussed

    採用輔助偏壓熱絲cvd技術，制備擇優生長的多晶金剛石薄膜，研究了金剛石薄膜的成核及生長機理，並將其應用於功率電子器件的熱沉。
  2. Growth and characterization of undoped polycrystalline zno films

    熱蒸發分解法制備多晶氧化鋅薄膜以及性能分析
  3. Ito substrate with an smooth surface of 0. 2nm rms roughness measured by afm was obtained by the developed pre - cleaning processing procedure. mbe growth of znsxse1 - x thin films on ito coated glass substrates were carried out using zns and se sources. the xrd 9 / 29 spectra resulted from these films indicated that the as - grown polycrystalline znsxse1 - x thin films had a preferred orientation along the ( 111 ) planes

    採用分子束外延技術在ito導電玻璃上低溫沉積了zns _ xse _ （ 1 - x ）多晶薄膜，詳細研究了薄膜制備的工藝參數，在最佳沉積條件下，制備獲得了晶型為立方閃鋅礦，並具有（ 111 ）面高度定向生長結構的柱狀zns _ xse _ （ 1 - x ）多晶薄膜，其rms表面粗糙度最小可達1 . 2nm 。
  4. Abnormal grain growth and its countermeasure in sintering of fine grained polycrystalline diamond compacts

    細粒度金剛石燒結體中異常粒成長及其對策
  5. Growth of high - quality cuinse2 polycrystalline films by magnetron sputtering and vacuum selenisation

    用磁控濺射和真空硒化退火方法制備高質量的銅銦硒多晶薄膜
  6. Selective growth of polycrystalline diamond film by selectively seeding with nanocrystalline diamond powder

    在不同襯底上用納米引晶法選擇性生長金剛石薄膜
  7. Although some material scholars have made great progress in simulating polycrystalline solid grain growth by means of mc method

    盡管一些材料研究者近年來運用montecarlo方法在模擬多晶材料晶粒生長方面取得了較大的進展。
  8. High quality znsxse1 - x thin film grown at the optimized temperature had the smoothest surface with lowest rms value of 1. 2 nm and tem cross - sectional micrograph showing a well defined columnar structure. the dependence of substrate temperature, deposition rate and alloy composition to the structure of the film was discussed in the thesis. the developed theory named " quasi - structure area mode " can successfully explain the film growth mechanism of polycrystalline znsxse1 - x thin films deposited on ito substrate by mbe

    研究了採用mbe系統沉積zns _ xse _ （ 1 - x ）多晶薄膜的生長機理，分析了襯底溫度、沉積速率及薄膜組分對薄膜微結構的影響，提出的「類結構區域模型」可以較完整地解釋ito襯底上zns _ xse _ （ 1 - x ）多晶薄膜生長的機理。
  9. There are many different methods of growth cdse single crystals, but they have some deficiencies. in our study, the technique of the purification of starting materials had been improved : the purification of polycrystalline and growth of cdse single crystals had be carried on in the same quartz ampoule and starting materials had been transferred into the growth ampoule directly in the last process of purification, which avoided the extra contamination

    由於制備具有高純度和高電阻率的cdse單晶體非常困難：到目前為止，制備cdse單晶體的方法雖然很多，如溶液法、熔體法、溫度梯度溶劑區熔法（ tgsz ）等，但是都因各自的不足而沒有成為簡便而理想的制備cdse單晶體的方法，所以cdse單晶體沒有得到廣泛的應用。
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