process gas balance 中文意思是什麼

process gas balance 解釋
工藝氣流平衡
  • process : n 1 進行，經過；過程，歷程；作用。 2 處置，方法，步驟；加工處理，工藝程序，工序；製作法。3 【攝影...
  • gas : n （pl gases ）1 氣，氣體，氣態 〈cf fluid; solid〉 2 可燃氣，煤氣，沼氣；【礦物】瓦斯。3 【軍事...
  • balance : n 1 〈常作 a pair of balances〉 天平，秤。2 平衡，均衡，對稱；抵消；比較，對照，對比。3 （鐘表的...
  1. Applying the mass balance and the reaction equilibrium theory, a dynamic model of carbon content and temperature variation of bof steelmaking process based on the continuous data from the exhaust gas analysis system was built

    摘要根據物料平衡及反應平衡原理，利用爐氣分析系統在線連續檢測、分析數據，建立了轉爐冶煉過程中碳含量及溫度變化的動態模型。
  2. In order to understand such a process in ying - qiong basin clearly to serve well for oil and gas exploration and development, in the paper, the expression of the thermal fluid flow in trace markers as seismic response, geochemical index and fluid inclusion is stated, thus tracing out the thermal fluid flow in ying - qiong basin ; and the paths and direction of hydrocarbon migration and accumulation in the dynamic balance between accumulation and dispersion are pointed out by use of various trace markers of the thermal fluid flow which is taken as hydrocarbon carrier

    為了清楚地認識鶯一瓊盆地中的這一過程，更好地服務于油氣的勘探和開發，本文闡述了熱流體活動在地震響應、地化指標、流體包裹體等示蹤標志上的表現，進而追蹤鶯瓊盆地中的熱流體活動，並指出作為油氣載體的熱流體的各種示蹤標志，在油氣運聚動平衡過程中指示了油氣運聚發生的路徑和方向。
  3. In the eme model, the electron energy balance equation is taken into account and the transport coefficients are assumed to be the functions of the electron mean energy. in this paper, a software is programmed to simulate the discharge process of plasma display cell of coplanar - electrode type, the matrix - electrode type and the novel shadow - mask pdp according to the gas discharge mechanism and fluid simulation theory. the simulation results show that both lfa model and eme model can be used to investigate the discharge characteristics of the cell, but the eme model is preferred for its better coincidence with theories and experiments

    在本文中，分別使用本地場近似的lfa （ localfieldapproximation ）流體模型和假設碰撞反應系數、傳輸系數和電子的平均能量相關的eme （ electronmeanenergy ）流體模型對pdp放電過程進行模擬，比較分析模擬結果，得出eme模型和lfa模型對放電的繁流、起輝放電、熄滅等過程的描述的基本趨向是大致相同的，而從模擬工作電壓與實際電壓的接近程度和放電效率角度比較， eme模型的模擬結果跟理論和實驗結果更為相符。
  4. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  5. This general formula can describe not only the releasing process of elastic energy in gas reservoir but also the material balance phenomenon caused by the retrograde condensation in gas reservoir and it can be simplified as the material balance equations of condensate gas reservoirs under several special cases, thus providing a effective means for the performance analysis and prediction of condensate gas reservoir development

    該凝析氣藏物質平衡方程通式既能描述氣藏彈性能的釋放過程，又能描述氣藏反凝析引起的物質平衡現象，並可簡化為幾種特例下凝析氣藏的物質平衡方程，為凝析氣藏開發動態分析及預測提供了一種有效的手段。
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