radiation hardening 中文意思是什麼

radiation hardening 解釋
輻射加固
  • radiation : n. 1. 發光,射光,放熱,放射,發射。2. 【物理學】輻射;放射物;輻射線[熱、能];照射(作用)。3. 【動、植】輻射形;【測】射出測量法;【醫學】射線療法。
  • hardening : n. 1. 硬化;【冶金】淬火。2. 硬化劑。
  1. Reference to the convention means of the analysis and research for energy spectrum hardening and photon scattering in internal and external, and based on the physical mechanism of radial interacts with matter, this paper approximatively deduce a theoretical formula of correction of energy spectrum hardening and scattered radiation in transmission industrial x - ray computerized tomography from a ideal model. and presented a correction computer program

    本文在分析研究國內外有關射線能譜硬化和散射修正問題的分析方法及其研究狀況的基礎上,從射線同物質相互作用的物理學機理出發,從理論上近似推導了x射線能譜硬化和散射修正計算公式,建立了散射修正的分析模型,並編制了相應的計算機修正程序。
  2. One involves the radiation hardening technique of electronic devices aboard on spacecraft for extremely high energy protons with low flux existed in the environment of space ; the other is related to the thermal - mechanical effects of materials under the exposure of high - energy intense - current proton beams

    本文主要研究了空間飛行器抗輻射加固研究中涉及的高能質子輻射效應問題和強流質子束輻照引起的熱?力學效應問題。
  3. As a wide bandgap semiconductor material, silicon carbide is an exellent material with superior thermal, electrical, mechanical and chemical properties for the fabrication of high temperature, high power, high frequency and radiation hardening electronic devices

    Sic是一種寬帶隙半導體材料、第三代半導體材料的代表,是製造高溫、高頻、大功率、抗輻照等半導體器件的優選材料,又被稱為極端電子學材料,在微電子學領域具有廣闊的應用前景。
  4. Designs of redundant, radiation hardening and anti - lock of cmos integrate circuit were developed as the reliability steps of the on - board embedded computer system

    提出了利用一定冗餘備份的容錯設計技術、計算機抗輻加固技術和cmos集成電路抗閂鎖技術等提高星載嵌入式計算機系統可靠性的措施。
  5. Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too

    首先,對有關輻照效應的理論進行了簡要的敘述,介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型,另外,還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。
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