rapid annealing 中文意思是什麼

rapid annealing 解釋
快速退火
  • rapid : adj 1 快。2 敏捷的，麻俐的，快手快腳的（工人等）。3 峻險的（坡等）。4 【攝影】感光快的。n 〈常 pl...
  • annealing : 熱處理
  1. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  2. Wang yongqian, liao xianbo, ma zhixun, et al. solid - phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing [ j ]. applied surface science, 1998 135 : 205

    薛清，郁偉中，黃遠明.利用快速退火法從非晶硅薄膜中生長納米硅晶粒[ j ] .物理實驗， 200222 （ 8 ） : 17
  3. It was reported that the secondary phase of mnas has been found in gaas substrate by mn - implanted and subsequent rapid thermal annealing

    有報道稱採用離子注入的方法將mn ~ +注入到gaas單晶襯底中，經過快速熱退火處理后，發現在晶體中生成了mnas第二相。
  4. The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated

    摘要通過對已經過兩步（低高）退火的大直徑直拉矽單晶片進行高溫快速熱處理，研究矽中氧沈澱被高溫快速熱處理消融的情況。
  5. In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased

    Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。
  6. In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion

    本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。
  7. Research progress of rapid quenching and annealing of rare earth - based hydrogen storage alloys

    稀土系貯氫合金的快淬及退火研究進展
  8. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  9. Tb doped pt thin films with highly ( 100 ) orientation were prepared. rapid thermal annealing process was used to supply enough energy for the movement of the atoms. so perovskite phase began to form at ( 100 ) orientation which had the lowest surface energy

    研究發現， pt / tb薄膜系統為非均相成核，利用快速熱處理工藝可控制原子以高能量遷移，使鈣鈦礦結構晶體以表面能最低的（ 100 ）晶面在薄膜生長方向上結晶生長， pt / tb薄膜出現了（ 100 ）晶浙江大學碩士學位論文面的擇優取向。
  10. The main work is as the follows : 1. perovskite batio3 thin films are grown on sio2 / si ( 111 ) substrates by sol - gel process and rapid thermal annealing ( rta ) technique

    主要工作如下: 1 .用溶膠-凝膠法和快速退火工藝在sio2 / si （ 111 ）基片上生長了鈣鈦礦結構batio3薄膜。
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