rate of vapor deposition 中文意思是什麼
rate of vapor deposition
解釋
汽相淀積速率- rate : n 1 比率，率；速度，進度；程度；（鐘的快慢）差率。2 價格；行市，行情；估價，評價；費，費用，運費...
- of : OF ＝Old French 古法語。
- vapor : n. 〈美國〉＝ vapour.
- deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
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Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited
本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。 -
By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched
實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。 -
For the liquid phase method, it is discovered that the optimal encapsulation is obtained at stalling ph equal 8. 5 by the analysis of the influence of ph on the compactness. for the atmospheric chemical vapor deposition, the optimal experimental condition of coating is determined by the analysis of the influence of different reaction temperature and different flow rate of o2 and different reaction time on the compactness of the coating and the luminescent performance of the phosphor in the experimental scope
對于液相包膜，通過分析陳化ph值對膜層緻密性能的影響，發現在ph值為8 . 5陳化能夠得到最佳的包覆；對于化學氣相沉積法，通過分析不同溫度、不同氧流速、不同時間對包覆膜層緻密性能和zns ： cu材料的發光性能的影響，找到了該實驗范圍內包覆的最佳條件。
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