related impurities 中文意思是什麼

related impurities 解釋
相關雜質
  • related : adj. 1. 所敘述的，所說的。2. 相關的，有關系的〈尤指有親戚關系的〉。3. 【音樂】和聲的。n. -ness
  • impurities : 懸浮固體物
  1. Due to high - thermal stability and independent of impurities dj - center is argued to originate from antisite or antisite complex. furthermore, the ltpl measurements have been taken on as - irradiated and postannealed p - type 6h - sjc, l ; lines related to dj - center were not observed with sample after postannealing at 1500 ?, the observation of a series of high intensity spectra which may mask the d1 - center due to the recombination of the d - a pairs

    本文還對經幅照的p -型6h - sic的幅照退火特性進行了研究，在經過1500後退火的樣品中沒有觀察到d _ i - center ，這可能是由於d _ i - center被實驗中觀察到的源於d - a對輻射復合的高強度的譜峰所掩蓋。
  2. The major research interest covers a broad range of topics concerned with the fundamental properties of shallow - levels in semiconductors and with impurity related issues of importance to semiconductor physics and technology, e. g., single and multiple donors and acceptors, shallow excited states of deep - level impurities, defect interaction on the atomic scale such as impurity - pair or complex formation

    主要研究方向涵括半導體物理與技術方面有關雜質之重要領域，例如施者與受者雜質、淺與深雜質、雜質能階、雜質光譜、雜質與雜質或缺陷相互間之交互作用，以及復合雜質之形成與特性等。
  3. These quenching centers can quench both blue emission related to the surface defects and the orange emission of mn2 + impurities. they are most likely originated from the dangling bonds of the lone pairs on surface s2 " or the zn2 + vacancies

    這種表面猝滅中心對自激活藍光和橙光發射都有猝滅作用，它們極有可能來自表面s ~ （ 2 - ）孤對電子的懸空鍵或zn ~ （ 2 + ）空位。
  4. Quantum confinement effect was observed in the films by measurements of absorption spectrum of ge - sio2 films. the widening of optical band gap of the amorphous films seems to be related to the function of the quantum confinement on the impurities or defects in the films

    光吸收特性研究表明，因量子限域效應，對于ge - sio _ 2薄膜觀察到較強的光吸收和光吸收邊隨ge顆粒尺寸變小而藍移的現象。
  5. As for the pl mechanism, except the red band, the rest are all originated from luminescence defects related to impurity, and the luminescence centers are affected by configuration of impurities, while the red emitting band may attribute to the quantum confinement effect of nano - si, but will also rely on its interface characteristic

    就發光機制而言，除紅光寬帶外，均起源於氧、氮摻雜引起的缺陷發光中心，發光中心受雜質組態影響，紅光寬帶可能聯繫到量子限制效應，同時還依賴于界面特性。
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