reverse bias 中文意思是什麼
reverse bias
解釋
反偏壓-
The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer.
位移電流的機理只對反向偏壓或要維持空間電荷層所需要的非常弱的正向偏壓條件下的電容器才有用。 -
This condition, known as reverse bias, is not conducive to current flow through the junction.
這種叫做反向偏置的狀態不利於電流穿越結。 -
The presence of a large density of contaminant causes anomalous increases in the diode current with increasing reverse bias.
大量沾污也會使二級管電流隨反向偏壓的增加而呈現反常的增大。 -
The photo-current was found to closely follow the eletro-absorption at large reverse bias values.
在很大的反向偏壓下，光電流緊隨著電吸收發生變化。 -
In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices. one is a typical of oc stress method with collector open and reverse - bias emitter - base junction. another one, a new technique, is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction
本論文採用兩種反偏電應力方法考察器件的可靠性，一種為傳統的oc應力（集電極開路，發射結反向偏置）方法，另一種為新的方法fc應力（集電結正向偏置，發射結反向偏置）方法。 -
The usual method to broaden the bandwidth of the pin diode switch is combining the pin diodes with stub filters : when under reverse bias, the didoe is part of the filter, the transmission bandwidth is broadened ; when under forward bias, the structure of the filter is destroyed, signal is isolated
Pin二極體開關展寬頻帶的方法一般是把pin二極體結合進短截線濾波器，使pin二極體在反向偏置時作為濾波器的組成部分，以展寬開關在傳輸狀態下的頻帶；當二極體正向偏置的時候，濾波器的結構被破壞，起到隔離的作用。 -
Devr - v series high - temperature reverse bias burn - in system
Devr - v系列高溫反偏老化系統 -
Both spontaneous and reverse - bias assisted recoveries of device performances were observed, and these degradation and recover } " phenomena were discussed in terms of the movement of ionic impurities and the formation of permanent and induced electric field dipoles in organic layers
文中定性的比較了在中斷電場和反向電場前後的發光特性變化，定量的給出了中斷電場和反向電場前後發生器件性能衰變的恢復程度。 -
The purpose of introducing ferroelectric polymeric pvdf material was to make use of the remanent polarization of ferroelectric materials and to study the effect of the internal field formed in the device during the device worked. the diodes were driven at constant voltage and were also kept under short - circuit or reverse - bias conditions
本文將具有特殊極化性能的鐵電高分子材料pvdf引入器件，目的在於利用其電場下其殘余極化特性，研究此種器件工作時形成的內電場情況及其對器件穩定性的影響。 -
In view of the very small leakage currents in the blocking state ( reverse bias ) and the small voltage in the conducting state ( forward bias ) as compared to the operating voltage and currents of the circuit in which the diode is used, the i - v characteristics for the diode can be idealized
與二極體的工作電流和電壓相比，在阻斷（截止）狀態下漏電流很小，在導通狀態下電壓比較小，因此二極體的電流-電壓（伏安）特性可以理想化。 -
Experimental results indicated that for the two reverse - bias stresses the degradation of the devices depended on magnitude and energy of the injected carriers. fc stress condition may speed up the degradation of devices and shorten the time of evaluating the devices life
在實驗中我們發現對這兩種應力，器件的退化與注入的熱載流子的數量以及能量有關， fc應力方法可以加速器件的退化，縮短評估器件壽命的時間。
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