second breakdown 中文意思是什麼
second breakdown
解釋
第二次擊穿-
And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown
而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。 -
The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping
首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。 -
The sequence of two patterns presence is changed alternately, that is, one pattern will appear at the second pulse of total pattern in this half cycle if it appears at first pulse in last half cycle. the stability of square pattern was studied by considering the interaction among the wall charges. the discharge moments of individual filament alternate from long one to short in the square pattern, which can been explained by using the breakdown and quench model through considering the wall discharge accumulated on the dielectric layers
實驗研究了正方網格斑圖與混合氣體的比例及外加電壓的關系，給出了班圖類型隨上述條件變化的相圖；實驗採用光學方法對正方網格斑圖進行了時空動力學測量，發現正方網格斑圖是由兩套正方網格斑圖相互嵌套而成，其中一套的微放電絲位於另一套正方形單元的中心，這兩套微放電絲交替進行放電；考慮到壁電荷之間的相互作用，研究了正方網格斑圖的穩定性；實驗發現正方網格斑圖的微放電絲放電時間間隔是長短交替變化的，考慮到電介質表面積累的壁電荷的作用，使用擊穿?熄滅方程很好的解釋了該現象。 -
In 1992, li zhiqing ' s master degree paper, the temperature stability of vertical bloch line ( vbl ) chains in walls of second hard dumbbell domain ( iid ) in the uncompressed state was investigated experimentally and a threshold temperature ( 7 ) nd at which to breakdown the vbl chains in the walls of iid was found
由於其轉化過程中vbl沒有丟失，也就是說，其疇壁結構沒有發生變化，所以我們再次證明了三類硬磁疇的疇壁結構是一致的，在直流偏場下之所以會出現不同的縮滅行為，完全是由於vbl的數目引起的。
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