secondary electron 中文意思是什麼

secondary electron 解釋
【物理學】次級電子。

  • secondary : adj 1 第二（位）的，第二次的；中級的 （opp primary）。2 副（的）；從屬的；附屬的；輔助的；補充的...
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  1. The performance of the static inverter has become more and more important since it is a basilic part of secondary power source in airplane which ensures the electron devices to work normally

    作為飛機二次電源重要組成部分之一的靜止變流器，是保證用電設備正常工作的基礎，其性能的重要性也越來越突出。
  2. The secondary backscattered electron current is used to modulate the intensity of an electron beam in a cathode ray tube(crt).

    二次電子或背散射電子的電流被用來調制陰極射線管（CRT）中電子束的強度。
  3. When primary electrons hit the surface of the chunnel, secondary electrons are generated, which make the electron distribution at the exit hole of the chunnel more uniform

    當初始電子碰撞絕緣壁時，會產生二次電子，而二次電子能改善電子在通道出口處的電子能量分佈的均勻性。
  4. Channel type secondary - electron multiplier

    形二次電子?倍管
  5. This project which is based on the demand of increasing the electron tube ’ s qualities totally and reducing the manufacture cost has done a large amount of investigative work as follows to improve and perfect the technologies for the important part of electron tube manufacture ? the grid surface processing : on the surface processing of the molybdenum grid, the primary purpose is to reduce thermionic emission and secondary electronic emission of the grid. by the constantly experiment and grabbling the different technology routes, we have successfully developed these new technologies on the tac and zrc electrophoresis and electroplating platinum black of the grid, and made its surface cladding quality very stable and reliable

    本課題是基於整體提高電子管的質量和降低生產成本的要求，對電子管生產中的重要部分? ?柵極的表面處理技術進行改進和完善，主要在以下方面進行了深入研究:在鉬柵極表面處理方面，主要為實現降低柵極的熱電子發射和二次電子發射，通過不同工藝路線的不斷試驗和摸索，成功開發出柵極電泳tac 、 zrc和電鍍鉑黑的新工藝，使柵極的塗覆質量穩定可靠。
  6. The fabrication parameters were preliminarily optimized. the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ). the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )

    闡述了摻硼金剛石膜的制備工藝，研究了摻硼金剛石膜成核和生長的影響因素，初步優化了沉積摻硼金剛石膜工藝參數，同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。
  7. Ion bombardment secondary electron image

    離子轟擊二次電子象
  8. Secondary electron detector

    二次電子探測器
  9. The secondary electron effect is incorporated into the simulation, which are divided into true secondary and reflected primary electrons

    分析了次級電子發射的特性，在模擬中將次級電子近似分為真實次級電子和反射的原電子分別處理。
  10. In chapter 2, the principles of mdc for twts, refocusing and the influence of the secondary electrons are analyzed. the electron energy entering the collector is analyzed

    第二章從分析互作用后電子能量分佈入手，分析多級降壓收集極的工作原理、再聚焦原理和次級電子的影響。
  11. The qualification of multipactor and the characteristic of the angle and velocity of secondary electron were study. bring forward a improved model of multipactor and solve it by a random sample made by monte carlo, as a result, a critical curve of multipactor was gained

    提出了一個改進型的次級電子倍增研究模型，利用蒙特卡羅法生成的隨機樣本來求解這個模型，得到了工作在2 . 85ghz的介質片的次級電子倍增敏感度曲線。
  12. The theory of seea is based on the insulator ' s surface emitted secondary electrons when bombarded by electron, includes the process of electron - simulated desorption ( esd ), the process of desorption gas ionization and the process of the ion influencing the flashover

    Seea理論以絕緣子表面在電子轟擊下發射二次電子為基礎，包含了電子誘發脫附（ esd ） ，和脫附氣體離子化並對閃絡過程產生影響等過程，對表面閃絡現象進行了解釋。
  13. In this paper based on the theory of the low energy electrons, the movement of the irons in the counter is analyzed. the theories of sputtering and secondary electron emission are discussed respectively. the irons " action and effect on the counter are putted forward

    本文從低能電子發射機理入手，分析了計數管內部離子運動情況，討論了離子濺射和二次電子發射，提出了離子與計數管內壁相互作用及其對計數管的影響，給出了計數管內壁表面處理模擬圖。
  14. The numerical computing methods of the equations involving the static electric - magnetic field, electronic motion in the static electric - magnetic field, and so on are detailed. the methods of the boundary disposal are introduced. the phenomenon of secondary electron emission has also been studied

    介紹了數值計算方法，包括靜電磁場的數值計算、在靜電靜磁場中電子運動軌跡的數值計算、空間電荷密度的數值計算和空間電位分佈的數值計算;介紹了邊界處理方法。
  15. A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente

    電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。
  16. The selections of electron microscope magnifying multiple and measuring size in fatigue fracture fractal measure are studied in this paper, and the improved treatment of secondary electron lines scanning fractal dimension, is applied successfully to the measuring of ti alloy welded joint fracture fractal dimension and the valuable selective range of fractal dimension measuring parameter is got, which is very important to further research

    本文應用數據處理技術研究了疲勞斷口分維數測量中電鏡放大倍數及測量碼尺的選擇問題，改進了二次電子線掃描分維數處理方法，並成功地應用於鈦合金焊接接頭斷口分維數的測量，得到了有價值的分維數測量參數的選擇范圍，對進一步的研究具有重要意義。
  17. The factors which influenced the process include the insulator ' s material, structure, the distribution of space electrical field, the way to deal with the surface, the characteristic of voltage waveform, pulse width etc. there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr )

    影響該過程的因素包括絕緣材料結構、空間電場分佈、表面處理方法、所加電壓特徵，脈沖寬度等。研究真空表面閃絡過程有兩類理論：二次電子發射崩潰（ seea ）和電子引發極化鬆弛（ etpr ） 。
  18. Based on the comparison and analysis of the secondary electron emission coefficient of two kinds of emitter gaas in theory, it is concluded that when primary electron energy is lower the deviation of secondary electron emission coefficient of two kinds of emitter gaas will become smaller, while when primary electron energy is higher the deviation will increase

    通過對兩種負電子親和勢二次電子發射材料的二次電子發射系數的理論值進行比較和分析，得出：當原電子入射能量較低時，兩種材料的二次電子發射系數差值較小；當原電子入射能量較高時，兩種材料的二次電子發射系數差值較大，而且隨著原電子入射能量的升高，兩種材料的二次電子發射系數差值也在增大。
  19. One is that output window is cracked by the arcing on the surface of output window resulted by the secondary - electron, the other is that the stresses result from intense local heating produced by the power dissipation due to the loss factor of dielectric of the output window cause the output window to rupture 2. the second problem is now discussed in this dissertation

    這就會導致輸出窗片溫度過高，熱應力過大。當窗片的熱應力超出它的承受能力時，窗片就會破裂。因此，有必要對輸出窗進行熱分析研究，為輸出窗的設計提供理論依據。
  20. According to secondary electron emission avalanche ( seea ) theory, the effects of insulating materials, shapes, electrode structures of vacuum insulator on surface flashover and its mechanism, design optimization methods for vacuum insulator to improve surface flashover voltage by selecting insulating material, shape and electrode structure are reviewed

    摘要根據二次電子發射崩（ seea ）理論，綜述了真空絕緣子的絕緣介質材料、幾何形狀和電極結構對絕緣子沿面閃絡的影響和機理過程，以及從這三方面優化設計真空絕緣子以提高其沿面閃絡電壓的方法。
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