semiconductor detector 中文意思是什麼

semiconductor detector 解釋
半導體檢波器
  • semiconductor : n. 【物理學】半導體。
  • detector : n. 1. 發覺者。2. 偵查器。3. 【化學】檢定器。4. 【電學】檢電器。5. 【電訊】檢波器，指示器。
  1. The electron multiplier detector is appropriate to do ordinary detect works for its high sensitive and semiconductor photodiode ( such as silicon diode ) is appropriate to act as transfer standard detect for its high stability

    倍增器的靈敏度非常高，適合日常的測量工作；半導體型光電二極體（如si二極體）的穩定性好，適合作傳遞標準探測器。
  2. It is well known that wo3 is a conductance - type semiconductor gas sensing material, but the research on fish freshness detector with wo3 - based gas sensor to trimethylamine is still at a beginning stage. in this project, the wo3 - based gas sensors to trimethylamine are made, and their gas sensing performance are researched, especially at low temperature, the results are as follows : 1. the nano - sized wo3 powder is prepared by sol - gel method of sodium tungstate and hydrochloric acid, and its microstructure is analyzed by using xrd, sem and tem, for material ’ s microstructure is closely related to gas sensing performance

    本課題制備了wo3材料，並以它為基材，製作了三甲胺氣敏傳感器，研究了其對三甲胺的氣敏性能，尤其是低工作溫度下的氣敏性能，得到結果如下: 1 、本課題以鎢酸鈉和濃鹽酸為反應物，用溶膠凝膠法制備了納米wo3材料，並採用x射線衍射分析儀（ xrd ） ，掃描電鏡（ sem ） ，透射電鏡（ tem ）對該材料進行結構分析和形貌觀察，研究發現材料的微觀結構與氣敏性能緊密相關。
  3. Lithium drifted germanium semiconductor detector

    鋰漂移鍺半導體探測器
  4. Semiconductor discrete device. detail specification for type 2dv8cp silicon microwave detector diode

    半導體分立器件. 2dv8cp型硅微波檢波二極體詳細規范
  5. The products of hg genuine cover semiconductor laser and detector chip, active device, transceiver that are widely applied in communication and optical sensors

    公司產品包括半導體鐳射器和探測器管芯、光電子器件、光收發模組三大系列，主要應用於數字、模擬通信以及光傳感等領域。
  6. Zno is a ii - vi semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties

    氧化鋅（ zno ）是一種具有六方纖鋅礦晶體結構的寬禁帶ii - vi族半導體材料，由於其優良的特性，在太陽能電池、紫外探測器、聲表面波器件、氣敏傳感器、透明電極等方面得到了廣泛的應用。
  7. The experiment results are valuable to the research of infrared lens, laser window, integrated optical device, the device for blue semiconductor laser, optical detector, nonlinear device, optical waveguide, thz emitter and other devices the following is a brief summary of the works conducted in this thesis and the results achieved

    實驗結果有助於這些材料作為紅外透鏡、激光窗口、集成光學器件，藍光半導體激光器件、光探測器件、非線性光學器件、波導調制器件、 thz發射器件等的研究。
  8. Zno is a - semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, lighting displayer, saw device, gas sensor et al for their excellent physical properties

    氧化鋅（ zno ）是一種具有六方纖鋅礦晶體結構的寬禁帶-族半導體材料，由於其優良的物理特性， zno薄膜在太陽能電池、紫外探測器、發光顯示器件、聲表面波器件、氣敏傳感器等方面得到了廣泛的應用。
  9. The photoconductive uv detectors based on zno : al thin films, having a metal - semiconductor - metal ( msm ) structure with interdigital ( idt ) configuration, were fabricated by using au as a contact metal. the characteristics of dark and photocurrent of the uv detector and the uv photoresponse of the detector were investigated

    同時， au和zno : al薄膜間已形成歐姆接觸，無光照時，暗電流很小，當用= 350nm的光照射器件時，在6伏偏壓時，光生電流為58 . 05 a 。
  10. Undoped gaas semiconductor as photoconductor detector materiel is used and gaas photoconductor detector with double microstrip structure is developed. a set of techniques of making gaas detector is found during experiments. in order to improve property of the detector, the detector is irradiated by electron

    我們採用不摻雜的高純度的砷化鎵作為我們光電導探測器的材料，研製出了具有微帶結構的gaas光電導探測器，並經過深入仔細的研究，摸索出了一套製作gaas光電導探測器的有效工藝方法。
  11. Semiconductor optoelectronic devices. detail specification for type gd3283y position sensitive detector

    半導體光電子器件. gd3283y型位敏探測器詳細規范
  12. Our research work lays a good foundation on development of gaas semiconductor and has great significance to the development of semiconductor detector in our country

    我們的研究工作為開發砷化鎵單晶體的應用奠定了良好的基礎，對國內半導體探測器技術的發展具有重大意義。
  13. Cdznte detector is a new type semiconductor detector. its energy resolution is better than nai ( tl ) detector but worse than hpge detector. it is smaller in size, lighter in weight, and more stable than traditional detectors in room - temperature applications, so it is widely used in nuclear safeguards

    Cdznte探測器是一種新型的半導體探測器，能量解析度介於hpge探測器和nai （ t1 ）探測器之間，並具有體積小，重量輕，能夠在室溫下長時間工作的優點，目前已經在核保障測量中得到廣泛應用。
  14. Measurement procedures for semiconductor x - ray detector system and semiconductor x - ray energy spectrometers

    半導體x射線探測器系統和半導體x射線能譜儀的測量方法
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