semiconductor film 中文意思是什麼

semiconductor film 解釋
半導體薄膜
  • semiconductor : n. 【物理學】半導體。
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. Its main purpose is to know different kinds of detecting method. generally, euv and soft x - ray photodetector included five types : ionization gas, semiconductor, electron multiplier and film

    總的說來極紫外和軟x射線光電探測器的類型有氣體電離型、半導體型、電子倍增器以及極紫外和軟x射線膠片（干板） 。
  2. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  3. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度（ monolayer ，簡稱ml ）的fe單晶超薄膜進行了鐵磁共振（ fmr ）和磁光研究，建立了理論模型對鐵磁共振實驗結果進行了模擬，重現了不同厚度的超薄膜，從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化，特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  4. The light guiding unit on the surface is composed of sub - micron gratings whose transmission wavelengths are red, green and blue in order. the light source are red 、 green 、 blue led or semiconductor laser array. to enhance the light utilization, the surfaces of light guide plate except the incident and transmitted surfaces are coated with metallic film

    本文設計的亞微米光柵型導光板為矩形狀的，導光板上表面的導光單元是由三套出射光主波長分別是紅光632 . 8nm ，綠光521nm ，藍光441 . 6nm的亞微米光柵組成，光源採用的是紅、綠、藍三色發光二級管或者半導體激光器陣列，為了提高光能利用率，除入光面和出光面外，導光板其餘面都鍍上金屬膜。
  5. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  6. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  7. Semiconductor devices - integrated circuits - hybrid integrated circuits and film structures - manufacturing line certification - generic specification

    半導體器件.集成電路.混合集成電路和薄膜結構.生產線認證.總規范
  8. Semiconductor devices - integrated circuits - hybrid integrated circuits and film structures - manufacturing line certification - blank detail specification

    半導體器件.集成電路.混合集成電路和薄膜結構.生產線認證.空白詳細規范
  9. Semiconductor devices - integrated circuits - hybrid integrated circuits and film structures - manufacturing line certification - procedure for qualification approval

    半導體器件.集成電路.第23 - 5部分:混合集成電路和薄膜結構.生產線認證.合格鑒定規程
  10. Semiconductor devices - integrated circuits - part 23 - 5 : hybrid integrated circuits and film structures ; manufacturing line certification ; procedure for qualification approval

    半導體器件.集成電路.第23 - 5部分:混合集成電路和薄膜結構.生產線認證.鑒定批準
  11. Semiconductor devices - integrated circuits - hybrid integrated circuits and film structures - manufacturing line certification - manufacturers ' self - audit checklist and report

    半導體器件.集成電路.混合集成電路和薄膜結構.生產線認證.生產商自審清單和報告
  12. Semiconductor devices - integrated circuits - hybrid integrated circuits and film structures - manufacturing line certification - internal visual inspection and special tests

    半導體器件.集成電路.混合集成電路和薄膜結構.生產線認證.內部目視檢查和特殊試驗
  13. Semiconductor devices - integrated circuits - part 23 - 2 : hybrid integrated circuits and film structures ; manufacturing line certification ; internal visual inspection and special tests

    半導體器件.集成電路.第23 - 2部分:混合集成電路和薄膜結構.生產線認證.內部審查和特殊試驗
  14. In the experiment, we use the he - ne laser and the semiconductor laser as the source, record the bessel beam patterns behind the axicon by using a digital camera and a microscope, measure the radius of the bessel beam central spot by film - scanning and measure the effect of both the radius of the aperture and the open angle of the axicon on the maximum non - diffraction distance. the experiments show that a specific propagating range has constant power and the beam has a bessel - like distribution in this range. the results agree with the beam corresponding to a diffraction free beam

    同時我們還採用膠片掃描的方法測量了無衍射光束的中心光斑尺寸，測量了不同光闌孔徑和不同稜角情況下的最大無衍射距離和傳播軸附近橫截面內微小光孔中的光強，實驗結果顯示當激光光束經過軸棱錐轉換後有一段距離功率變化很小，且分佈近似貝塞爾分佈，符合無衍射光束的特性;經過聚焦后，呈現三維分佈中空的光束bottlebeam ，實驗結果與理論分析基本吻合。
  15. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  16. Due to great advantage of the excimer laser in photoelectron material, photoelectron technology research, so in this thesis, a xecl excimer laser is designed in order to solve some problem in semiconductor film, cmr film, quartz film and other kind of film application, optical etching field, interaction between laser and material, material plasma study. the parameters of the excimer laser is e also measured and analyzed

    因此本文以氣相沉積、外延生長、巨磁薄膜、金剛石及其它薄膜制備及后續的光刻，激光與物質的相互作用，等離子體研究為目的，研製獲得了激光脈寬18ns ，單脈沖能量150mj ，矩形光斑大小2cm 1cm ，束散角3mrad ，最高重復頻率5hz的xecl準分子激光器。
  17. Manufactures diodes, leds and led products, bridge rectifiers, film capacitors, lamps, quartz tubing and quartz fabrication, semiconductor epitaxy and refractory metals. online product specifications and rfq

    -浙江樂清科達通訊有限公司是一家專業生產公話機配件的廠家，主要產品有公話機的手柄掛叉鍵盤等
  18. C60, a new type of semiconductor material, has many superior properties, such as wide forbidden band, direct band gap, rapid responding time, high optical damage threshold value and wide responding frequency band etc. these capabilities indicate that c60 film will be used widely in computer, integrate optical instrument and storage device etc. however, the preparation and the purification of c60 material affect the large - scale application at all times

    C _ （ 60 ）薄膜作為新的半導體材料具備許多優越特性，如禁帶寬度大、直接帶隙、快速響應時間、高的光學損傷閥值、較寬的響應頻帶等，這些性能預示了c _ （ 60 ）薄膜在計算機、集成光學器件、光存儲器等方面具有廣闊的應用前景，但c _ （ 60 ）材料的制備與提純還一直是阻礙該新材料投入大規模實際應用的主要因素。
  19. Dynamic simulation of rocking curve for semiconductor film and epitaxal material

    半導體薄膜及外延層材料搖擺曲線的動態模擬
  20. Monte carlo simulation of epitaxial growth on semiconductor film material

    半導體薄膜材料外延生長的蒙特卡羅模擬
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