semiconductor transistor 中文意思是什麼

semiconductor transistor 解釋
半導體晶體管
  • semiconductor : n. 【物理學】半導體。
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Metal semiconductor field effect transistor mesfet

    金屬半導體場效應管
  2. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  3. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  4. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  5. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  6. Semiconductor discrete devices. detail specification for type 3da89 high - frequency power transistor

    半導體分立器件. 3da89型高頻功率晶體管詳細規范
  7. Semiconductor discrete device. detail specification for type 3da150 high frequency and power transistor

    半導體分立器件. 3da150型高頻功率晶體管詳細規范
  8. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  9. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  10. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  11. Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

    半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范
  12. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范
  13. Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4856 cs4861型硅n溝道耗盡型場效應晶體管詳細規范
  14. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范
  15. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范
  16. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范
  17. The electrical current can be supplied without any affection to the transistor ( for the use of el pixels and signal line ), which in the semiconductor equipment

    提供一種半導體裝置，在向負載（ el像素及信號線）供給電流的晶體管中，可以不受偏差的影響供給正確的電流。
  18. As a new bus standard in computer peripheral hardware, usb is adopted and widely used in virtual instruments for its ease of use, true plug and play, power supply from bus, high transmission speed, etc. the purpose of this project is to design and develop a virtual instrument that can test and display semiconductor transistor output characteristics curve, instead of tradition instrument which has being used in labs by now

    而usb總線作為一種新興的計算機外設總線標準，由於易用、支持熱插拔、總線供電、傳輸速率高等特點，已經在虛擬儀器當中得到采納與普及。本文介紹了一種實現晶體管特性曲線測量的虛擬測試儀器的設計和製作方案，其可用來取代目前在實驗室中使用的老式的晶體管特性圖示儀。
  19. Semiconductor discrete devices. detail specification for type bt51 npn silicon small power difference matched - pair transistor

    半導體分立器件. bt51型npn硅小功率差分對晶體管詳細規范
  20. By using the least number of igbt, an up - to - date power electronic semiconductor transistor, this paper completes the circuit design of p - hev electric part. by rebuilding the existing experimental station, the paper also designs the p - hev ' s experiment system

    本文用最少的電力半導體元件完成對hev動力源中電力部分的電路設計，並在現有臺架等條件的基礎上改造設計了hev實驗系統。
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