side drain 中文意思是什麼

side drain 解釋
邊溝
  • side : n 1 (左右上下等的)邊,側面;(事物內外等的)面,方面;(人、物等的)旁,旁邊。2 〈數〉(三角形...
  • drain : vt 1 排去(水等液體),排泄,放干 (away; off)。2 喝乾,倒空。3 用完,花光。4 使…某物枯竭;使…耗...
  1. Fire water drain pit is provided at side of bottom of each fire elevator well, waste water will be sucked up and drained out by the pumps

    在每個消防電梯井底旁設有消防排水坑,廢水經潛污泵提升排至室外
  2. Remove l shape bracket from one side of air gap drain

    從氣隙排放裝置的一側拆卸l型支架。
  3. Side drain vent valve at the under part of flanged

    法蘭側面排氣排液閥在下部
  4. Side drain vent valve at the under part of flange

    法蘭側面排氣排液閥在下部
  5. Side drain vent valve on the top of flanged

    法蘭側面排氣排液閥在上部
  6. Side drain vent valve on the top of flange

    法蘭側面排氣排液閥在上部
  7. Side drain vent valve under of the flange

    法蘭側面排氣排液閥在下部
  8. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝,開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  9. Under hot carrier stress, device degradation is the consequence of hot carrier induced defect generation locally at drain side

    在熱載流子應力條件下,器件的退化主要是由於在漏極附近由熱載流子產生的損傷缺陷引起的。
  10. Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood

    我們通過載流子在漏極附加陷阱態勢壘的輸運模型,解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。
  11. Namely, the electric field at the drain - side edge of the gate decreases with the increasing of negative charge density in the surface, so the breakdown voltage of gaas mesfet ' s will increase

    表面受主態的增多使表面負電荷密度增大,表面聚集的負電荷可以分散漏側柵邊緣處的電力線密度,減弱了柵靠漏一側的電場強度,擊穿電壓提高。
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