soi 中文意思是什麼

soi 解釋
硅絕緣體
  1. Simox soi wafers produced by ion implant processes were used in this experiment. the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures. the soi transistors have been the key devices for achieving the low voltage operation and low power consumption, because of the small junction capacitance, the small s - factor, and the small substrate bias effect

    這三種模型分別是：第一，將傳統的mos電容結構應用到soi材料上來進行c - v ， i - v測試，分析計算soi材料的重要電學性能參數；第二種，針對soi材料的特殊結構，為了適應生產線上對無損soi園片進行電學性能測試的要求，應用mosos結構來對soi材料進行電學性能表徵。
  2. When the wpi - soi correlation is weak and the west pacific sst warmer ( colder ), a anomalous anticyclonic ( cyclonic ) circulation is found in the lower troposphere over northern equatorial western pacific. this anomalous circulation is not in favor of maintaining a significant correlation between the west pacific sst and enso

    Wpi - soi相關關系微弱時，在西太平洋赤道北側的對流層低層存在高（低）海溫?反氣旋（氣旋）異常環流系統，不利於維持enso與西太平洋海溫變化間的緊密聯系。
  3. During the research of the novel high - voltage soi lateral structure, we established its blocking theory based on poisson equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state

    在新型橫向高壓器件結構tsoi的研究中，本文通過二維泊松方程建立其解析理論，正確描述了漂移區中電場的分佈，並闡明其耐壓機理。
  4. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  5. Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band

    Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。
  6. Mr bloom interpolated. can you recall the boats ? our soi - disant sailor munched heavily awhile, hungrily, before answering

    我們這位自封的96水手貪饞地大口大口嚼了一通煙草才作答。
  7. That bitch, that english whore, did for him, the shebeen proprietor commented. she put the first nail in his coffin. - fine lump of a woman, all the same, the soi - disant town - clerk, henry campbell remarked, and plenty of her

    「都是那條母狗，那個英國婊子213要了他的命， 」偷賣漏稅酒的店老闆說， 「是她把第一顆釘子釘進他的棺材的。 」
  8. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  9. We propose a novel and simple y - branch configuration with simox soi wafers in order to achieve an asymmetric branching ration and low excess loss. the proposed structure only deviate the center axes of input taper wave - guides

    我們用soi晶片設計了一種新型的y分支型功率分配器，此結構通過改變中心軸線的位移值即可實現不同的功率分配的功能。
  10. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  11. In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

    本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。
  12. Is acceptable and fans of soi cheang should not be disappointed. however, don t expect another

    看來鄭保瑞距離修成正果之途，還有一大段路程。
  13. An entirely new structure of high voltage soi ldmos with located charge trenches in vertical and a lateral trench with a shape of u was studied. with lots of analysis on this new compound structure, the breakdown voltage was raised 30 % and size was reduced to 60 % of the common soi ldmos

    這樣，該復合結構不僅可突破普通高壓soimosfet器件的耐壓極限，同時也可以使器件尺寸減少30 %以上；是與國際水平同步的一項重要研究，對soi器件及其功率集成電路的研發具有重要的意義。
  14. It is represented the optimization and implementation of step drift doping profiles soi ldmos

    Soi階梯摻雜漂移區ldmos的優化設計與制備實驗。
  15. In this thesis, the optimization of soi step drift doping profiles ldmos is addressed. the work of the author included the optimization of soi single - resurf ldmos and ; design and implementation of a step drift doping profiles soi ldmos

    圍繞soi階梯摻雜ldmos器件的優化問題，本文從器件結構和工藝材料方面出發，借鑒已有理論，進行了soisingle - resurfldmos的優化研究以及soi階梯摻雜漂移區ldmos的優化設計及器件制備實驗。
  16. The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer

    模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。
  17. Soi cheang has successfully established his reputation as one of most gifted and promising young directors in hk who specializes in the horror genre. judging from the title, it is not hard to expect his latest work the death curse

    年青導演鄭保瑞擅拍恐怖片，先前兩部作品恐怖熱線-大頭怪嬰和熱血青年在輿論界都有不俗的口碑，是香港主流影壇少有的純恐怖片佳作。
  18. In this paper, the research of the dielectric isolation of over - 20 m - film soi is concentrated on the structure, technology and experiment

    論文對硅膜厚度大於20 m的soi介質隔離問題從結構、工藝和實驗三個方面進行了深入研究。
  19. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  20. In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

    本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。
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