soi integrated circuit 中文意思是什麼

soi integrated circuit 解釋
絕緣體上硅結構集成電路
  • soi : 硅絕緣體
  • integrated : adj. 完整的,完全的。 an integrated iron and steel works 鋼鐵聯合企業。 an integrated oil company 大型石油(聯合)公司。
  • circuit : n 1 (某一范圍的)周邊一圈;巡迴,周遊;巡迴路線[區域];迂路。2 巡迴審判(區);巡迴律師會。3 【...
  1. Soi hvic ( silicon on insulator high voltage integrated circuit ) is the mainstream and trend of the power integrated circuit ( pic ) due to the improved no latch - up, reduced leakage current, perfect irradiation hardness, and improved insulation

    Soi ( silicononinsulator )高壓集成電路具有無閂鎖、漏電流小、抗輻射、隔離性能好等優點,已成為功率集成電路( powerintegratedcircuit )的重要發展方向。
  2. Owing to their unique optical properties, such as low loss and large refractive index difference between silicon and silicon oxide, soi structures can not only be used to fabricate smart integrate photonic devices, but offer the ability to integrate photonic devices into the cmos integrated circuit ( ic ) process

    同時,它也具備許多優越的光學特性,比如低損耗(在通信波段) 、高折射率差,這使得它不但能用來製作靈巧緊湊的光集成器件,也為利用cmos微電子工藝實現光電集成提供了一個很好的平臺。
  3. In this paper, the soi technology is applied to the integrated circuit fabrication. soi technology overcomes some disadvantages of bulk silicon because of its inherent structure. it has the advantages such as no latch - up effect, low parasitic capacitance, high transconductance, simple structure, high density and good anti - radiation

    Soi技術以其獨特的材料結構有效地克服了體硅材料的不足,它具有無閉鎖效應;漏源寄生電容小;較高的跨導和電流驅動能力;器件結構簡單;器件之間距離小;集成度高;抗輻射性能優良等優點。
  4. Small outline integrated circuit soi

    小型塑封集成電路
  5. It has many advantages including excellent device isolation function, less parasitic effects among different parts, high speed, good radiation toleration, and high integration density, etc. consequently, high voltage soi spic has become a new field of power integrated circuit research

    它具有器件隔離性能好、器件間的寄生效應小、電路工作速度高、抗輻射能力強和集成度高等優點。因此基於soi的高壓智能功率集成電路已經成為功率集成電路研究的新領域。
  6. A high voltage power integrated circuit based on soi is developed, which has the following features : the breakdown voltage of power mosfet exceeds 600v, the highest operating frequency is 150 khz, and the largest output current is 1a

    論文設計實現了一種基於soi的高壓驅動電路,其性能指標為:耐壓600v ,工作頻率150khz ,最大輸出電流1a 。
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