source voltage 中文意思是什麼
source voltage
解釋
電源電壓-
Crowbar circuit protection of high voltage power supply of plasma filled hpm source
充等離子體微波源高壓電源的撬棒保護 -
The same remarks for the ideal voltage source in nodal analysis apply to ideal current sources in loop analysis.
關于節點分析法中理想電壓源的附註同樣可以應用到迴路分析法中出現理想電流源的情況。 -
In the foregoing example, the voltage source is nonideal and hence presents no difficulty.
在上面的例子中，電壓源是非理想的，所以沒有發現什麼困難。 -
In the paper, the four methods based on the evaluation of source ’ s reactive power are analyzed. those are voltage sensitivity ( vs ), pv curves, back - up generation and equivalent reactive compensation ( erc ) methods
由此文章分析了四種評估無功容量價值的方法:電壓靈敏度法、 pv曲線法、備用發電量法和等效無功補償法。 -
First from system aspect, this paper uses voltage sensitivity, pv curves method, equivalent reactive compensation method, back - up generation method to evaluate the reactive value of the generators in seven buses system and ieee 14 buses system. the vs and pv methods can evaluate the source ' s ability of tracking the load ' s variation. the erc and back - up methods can evaluate the availability of replacing other generators. the value determines the cost
從對系統貢獻角度，採用電壓靈敏度方法（ vs法） 、 pv曲線法、等效無功補償法（ erc ） 、無功備用方法來確定一個七節點系統中的發電機的無功價值和ieee14節點系統的發電機的無功價值，電壓靈敏度法和pv曲線法可比較出不同電源跟蹤負荷變化的靈敏度大小，而等效無功補償法和無功備用方法可比較出不同電源替換其它發電機是否是最有效率的。 -
2 ignitor : - this is an electronic amplifier that receives electric current from the ballast and boosts voltage to ignite the arc light source in all environments. it initializes plasma discharge within the source by delivering a high - volt pulse to the electrodes
2 ignitor : -是一個從ballast接收電流並向所有環境中的arc light source釋放電壓的電子放大器，它通過向電極傳遞高脈沖來對等離子放電器進行初始化 -
The voltage of bridge capacitor will become unbalanced, when inverter ' s input side is a single source. this phenomenon is inherent with the control of voltage feedback. a balance winding can overcome this shortcoming and widen the application of this circuit
採用單電源供電的半橋電路，如僅採用電壓反饋控制方案無法克服橋臂電容電壓的不平衡，通過加入平衡繞組可以克服這一缺陷，擴大電路的應用場合。 -
There are four kinds of dependent sources which are named as the voltage controlled voltage source ( vcvs ), the current controlled voltage source ( ccvs ), the voltage controlled current source ( vccs ), and current controlled current source
一個理想的電流源或電壓源，如果它的值受到電路其它量（通常是一個電壓或一個電流）的控制，稱它為受控源。 -
The main control board ( central process unit board, cpu board ) of measurement and control system is designed, and high accuracy programmable dual voltage source board ( dvs board ) is designed. improving suggestions of the cpu board are brought forward
設計了檢測與控制系統主控制板（ cpu板）和高精度可編程雙電壓源板（ dvs板） ，並提出對現在主控制板設計的升級方案建議。 -
It not only solves the problem of optimized control of the reactive current exchanging among branches, in other words, realizes the auto - tracking to the reactance factor, but also greatly improved the reliability of the system. to design the high voltage line wireless signal acquisition device with self - feed source, we applied electromagnet induction principle and digital communication technique
系統在優化控制技術中採用了電容器補償控制的兩段控制模型，不僅解決了分支線路之問穿越無功電流的最優控制問題，實現了功率因數的自動跟蹤，而且使整個系統的可靠性大大提高。 -
Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高 -
Monopole impulse substrate voltage source lbp - 6 type
單極脈沖偏壓電源lbp - 6型 -
As the experiment results show, multiple reasons led to the offset of oscillating frequency, including diode ’ s nonlinear characteristic, fluctuation of electrical source voltage, traction of load impedance, change of environmental temperature and humidity and the design of circuit
實驗結果表明多種因素引起了振蕩頻率的偏移，包括二極體的非線性、電源電壓的波動、負載的牽引、環境溫度濕度變化以及電路板設計方面的因素等。 -
We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on
本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。 -
In this paper, the working principle of the interleaving two - transistor forward converter is analyzed in detail, and the waveforms of the switch drain - to - source voltage and transformer magnetizing current are researched in different duty cycle conditions. the simulation model is constructed and the simulation results verify the analysis
本文分析了交錯並聯雙管正激變換器的工作原理，研究了在不同占空比條件下開關管的漏源電壓和變壓器勵磁電流波形，建立了模擬模型，模擬結果證明理論分析的正確性。 -
The hardware circuit design include : industrial control computer configuration, selection of industrial control board type, design of the power supply and monitoring interface circuit, design of signal processing interface circuit ( the constant current source circuit, the time base signal processing circuit, the processing circuit for the signal to be measured ), design of panel control circuit, design of the system self - checking circuit, and etc. the program flow hart include : main program flow chart, system boot - strap self - checking program flow chart, manual static testing program flow chart, semiautomatic static testing program flow chart, automatic static testing program flow chart, dynamic testing program flow chart, transient testing program flow chart, source voltage and current monitor program flow chart, investigate function testing program flow chart, and etc. the measure system offers six working power supplies, the signal of time base, the signal of constant current source, sine wave signal and step to leap signal, and measures the frequency of the output pulse signal of the wide range pulse convert circuit accurately under three kinds of different test state ( static form, dynamic form and transient form )
硬體電路設計包括：工控機配置、工控板卡選型、產品電源及監控介面電路設計、信號處理介面電路（恆流源電路、時基信號處理電路、被測信號處理電路）設計、面板控制電路設計、系統自檢電路設計等。程序流程圖包括：主程序流程圖、系統開機自檢程序流程圖、手動靜態測試程序流程圖、半自動靜態測試程序流程圖、自動靜態測試程序流程圖、動態測試程序流程圖、暫態測試程序流程圖、電源電壓和電流監控程序流程圖、研究功能測試程序流程圖等。測試系統提供六路工作電源、時基信號、恆流源信號、正弦波信號和階躍信號，並對三種不同測試狀態（靜態、動態、暫態）下大量程脈沖變換電路輸出脈沖信號的頻率進行精確測量。 -
To put into operation a large amount of non - linear load, make in harmony wave of rural power grids serious becoming in pollution, pass to rural local electric wire netting main in harmony analysis of wave source, put forward in order to restrain from insert rural power grids in harmony wave source voltage total in harmony wave distortion rate and the containing rate change last device number pulsating for increase of goal, increase the pulse of the current change device and install light specified value electricity active wave filter mix with passive wave filter near the harmonics source to control the wave in harmony
摘要大量非線性負荷的投運，使農村電網的諧波污染日趨嚴重，通過對農村地方電網主要諧波源的分析，最終提出了以限制接入農村電網的諧波源的電壓總諧波畸變率和各次諧波電壓含有率為目標的增加換流裝置脈動數，以及在諧波源附近裝設小額定值的電力有源濾波器配以無源濾波器的混合型電力濾波方式，以進行諧波治理。 -
Subcircuit models are designed and simulated, which includes bias current source, voltage reference, error amplifier, pwm comparator, driver circuit, protection circuits for over - temperature, over - current. at last, combined with periphery component, the circuit is simulated, and the result meets the anticipant requirement
並對集成電路內的各個模塊包括電流偏置電路、基準電壓電路、誤差放大電路、三角波振蕩發生電路、 pwm比較電路、驅動電路、過熱保護電路和過流保護等進行了具體的設計和模擬，並對整體應用電路進行了模擬，結果均達到了預先設定的指標。 -
Finally, th e design of low voltage low power current mode cmos circuit is discussed, the design is base on a novel structure which converts serial switches to parallel switches, allows the circuits to perform under lower source voltage which makes low power consuming possible, examples and simulation results are also given to prove the low power character can be reached
論文最後還討論了低電壓低功耗電流型cmos電路的設計，這一設計巧妙地將電路中的串聯開關轉換成並聯開關，使電流型cmos電路能在更低的電源電壓下工作，實現了電路的低功耗設計。論文中給出的設計實例和模擬結果驗證了基於並聯開關的電流型cmos電路的低功耗特性。 -
This character of mcml makes it favorable for constructing low power circuits because lowering the source voltage is the most effective way to lower the power
由於降低電源電壓是降低集成電路功耗最有效的手段， mcml電路的這一特點十分有利於集成電路的低功耗實現。
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