state density 中文意思是什麼

state density 解釋
狀態密度
  • state : n 1 〈常作 S 〉國，國家；〈通例作 S 〉（美國、澳洲的）州；〈the States〉 美國。2 國務，政權，政府...
  • density : n. 1. 稠密；濃厚。2. 【物理學】濃度；密度；比重。3. 愚鈍，昏庸。
  1. At a definite temperature a mesoscopic circuit isnt in a determinate quantum state instead of in the mixed state ( or statistical state ). using the density matrix of the canonical ensemble, we have deduced the formulate of the quantum fluctuations of both charge and current in a non - dissipative mesoscopic coupled circuit. and the dependences of the quantum fluctuation of the circuit on its temperature have obtained

    在有限溫度下，介觀電路系統實際上並不處在一個確定的量子狀態，而是處在混合態.根據正則系綜的密度矩陣導出耦合互感電路中電荷和電流的量子漲落，得到了量子漲落與溫度的依賴關系
  2. The main work and achierement are as following : ( 1 ) by using shock impedance matching technique and electric probe method, 5 shots of impact experiments were conducted to measure the hugoniot equation of state for enstatite ( mg0. 92, fe0. 08 ) sio3 with the average initial density 3. 05g / m3 from shock pressure 50 gpa to 115gpa, using two stage light gas gun

    本文研究取得的認識主要有以下幾點： （ 1 ）用阻抗匹配法和電探針技術在80 115gpa壓力范圍內對平均初始密度為3 . 05g / cm ~ 3的頑火輝石樣品進行了5發hugoniot狀態實驗測量。
  3. At the same time, the quality of different - state water was studied. the results show : the soil bulk density of the fir wildwood heightens with the increase of soil depth, specifically 0. 74 > 0. 94 andl. 34g / cm3, the saturated, canaliculus and field moisture contents decrease gradually in layer a, b and c, accordingly the soil total foveola decreases gradually, and the moisture - hold capacity of the soil lessens gradually with the increase of the soil depth ; there is small difference of the soil bulk density between layer a and b in the outer space, which are respectively 0. 92 and 0. 99g / cm3, and the other laws are the same as the in ner in the main ; reverse success often occurs in the low position of the thoroughly - fell trace and plateau marsh is formed

    結果表明：冷杉原始森林土壤容重隨土層深度的增加而增大，分別為0 . 74 、 0 . 94 、 1 . 34g cm ~ 3 ，飽和持水量、毛管持水量、田間持水量a層、 b層、 c層逐漸減小，十壤總孔隙度也逐漸減小，土壤的持水能力隨深度的增加逐漸減弱；林外空地a層、 b層十壤容重相差不人，分別為0 . 92和0 . 99g cm ~ 3 ，其它規律與林內人體相同：皆伐跡地的低洼地段容易發生逆行演替，形成高原沼澤地。
  4. This dissertation proves that a single m - partite entangled mixed state in the system whose dimension of each subsystem is two cannot be purified to an m - partite entangled pure state. in general, a single m - partite entangled mixed state whose density matrix has higher rank cannot be purified to an m - partite entangled pure state. for a class of entangled mixed states, its fidelity cannot be increased under locc

    論證了在局域操作和經典通信下，單個多體糾纏混合態（每個子系統的維數都為2 ）不可能被純化；密度矩陣有著較高秩的混合態也不可能被純化；給出了一類多體糾纏混合態，在局域操作和經典通信下，對某一糾纏純態的忠實度不能增加。
  5. By using the multi - configuration dirac - fock ( mcdf ) method, the effects of relaxation and correlation on the transition energies and probabilities of electric - dipole allowed ( el ) resonance and intercombination transitions for 2p53s3 - 2p6 in neutral neon have been systematically studied firstly. and the results of the transition energies and probabilities ( lifetimes ) in length and velocity gauge have been presented. during the calculation, in order to consider the rearrangement effects of the bound - state density and some important correlations, the asfs of transition initial - and final - states were divided according to their angular - momentum and parity and calculated, and different number of csfs were included in the expansion of asfs

    本文利用多組態dirac - fork （ mcdf ）理論方法，通過對輻射躍遷初、末態電子波函數的獨立計算以及在原子態波函數的展開中考慮不同數量的組態波函數，系統地研究了弛豫和相關效應對中性ne原子2p ~ 53s ~ （ 1 . 3 ） p _ 1 ~ o - 2p ~ 6 ~ 1s _ 0電偶極共振和復合躍遷的能量以及躍遷幾率的影響，給出了長度和速度兩種不同規范下激發態的能量和輻射壽命；以中性ne原子的研究為基礎，進一步研究了類ne等電子系列離子（ z = 11 - 18 ）較低的激發組態2p ~ 53s和基組態2p ~ 6的能級結構以及各能級間的輻射躍遷特性。
  6. Prevents melanin from forming by way of adjusting calcium ion density to keep the tyrosinase in inactive state

    藉由調整鈣離子濃度，讓酪胺酸酵素處于非活性狀態，避免黑色素生成。
  7. Spontaneous emission can be totally suppressed or strongly enhanced depending on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density. several novel phenomena can be obtained. the spontaneous emission displays an oscillatory behavior, classical light localization, photon - atom bound state, nonzero steady - state population and anomalously large vacuum rabi splitting. and localized mode associated with a defect site in an otherwise perfect photonic crystals, acts as a high - q micro - cavity

    通過原子上能級與光子頻率帶隙邊緣的相對位置或者光子態密度，可以抑制或增強原子的自發輻射。分析並得到了一些奇異的現象，如自發輻射的諧振子行為、光的局域、單光子?原子局域態、上能級中存在非零穩態原子布居數、類似於真空中的拉比頻率分裂等。
  8. In consideration of the calculation measures and the purpose of study, we selected the simple molecule model 5 in the above models and studied the relation between magnetism and structure. the molecular antiferromagnetism increases with the increasing of the bridging angle o - c - o ( o ). when 0 > 118. 623 degrees, the molecular antiferromagnetism increases with the decreasing of the spin density on the cu in its triplet state

    考慮到計算量及研究目的，在上面的模型中選取了較簡單的分子模型5 ，來研究其磁構效關系，分子的反鐵磁性隨橋聯角o - c - o夾角的增大而增強，在大於118 . 623度時，分子的反鐵磁性隨三重態銅上自旋密度的減小而增強，但當小於118 . 623度，分子反鐵磁性隨三重態銅上自旋密度的減小反而減小，在文中，我們解釋了這種現象。
  9. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  10. Present a modified particle filter ( pf ) algorithm based on the los / nlos binary state information of propagation environment using the numerical method of the probability density function ( pdf ) about the hybrid noise. the key idea is using numerical method to calculate the hybrid noise pdf, and integrating binary environment information to get filtering result

    2 .給出了應用粒子濾波器改進直達波與非直達波混合環境中移動終端跟蹤性能的新演算法，特色是利用數值方法計算混合噪聲密度函數，結合二元環境信息完成濾波估計。
  11. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  12. Based on experiments and theory analysis in the past, here we present the most important technology conditions that affecting photosensitivity : 1 、 cycle times, experiments showed that with the increase of cycle times, photosensitivity got worse ; 2 、 h dilution ratio, with the continuously increase of h dilution ratio, h ’ s bombardments on the growing surface enhanced continuously too. these bombardments can eliminate high - energy default configurations priorly and leave stable configurations behind. therefore, growing layer ’ s configurations are impacted ; default state density is decreased and photosensitivity is improved

    Layer - by - layer方法的制備工藝條件很多，我們在以往實驗和理論分析的基礎上，介紹了對光敏性影響最為重要的工藝條件: 1 、循環次數的影響，實驗表明隨著循環次數地增加，光敏性變差; 2 、 h稀釋比的影響，隨著h稀釋比的不斷增加， h對生長表面的轟擊不斷增強，這些轟擊能優先消除高能缺陷結構而留下穩定的結構，從而使生長層結構緻密，減少缺陷態密度，提高薄膜的光敏性。
  13. It is found that the fwm field can cause the asymmetry of electromagnetically induce transparency profile. in addition, the effect of different propagating orientations of probe field on the electromagnetically induced transparency is also discussed. in the molecular multi - level system with the perturbed superposition levels, we discuss the electromagnetically induced transparency, spontaneous emission enhancement, double dark resonance and double electromagnetically induced transparency by using the density matrix equation under weisskopf - winger approximation and dressed - state density matrix equation

    針對實際的實驗條件，考慮了一種影響量子干涉的新的因素-四波混頻場，研究了四波混頻場對雙光子探測的-型能級體系的eit的影響，發現四波混頻場能夠導致雙光子探測的eit線型的不對稱，在此基礎上，討論了不同探測場的傳播方式對eit的影響，針對分子中實際存在的包含有微擾能級的不同多能級系統，我們分別採用綴飾態繪景下的密度矩陣方程和weisskopf - wigner近似下的密度矩陣方程詳細地討論了電磁感應透明、自發輻射的干涉相消和相長、雙暗態共振和雙電磁感應透明現象。
  14. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  15. Determination of solid state density - part 2 : gaspycnometry

    固體密度的測定.第2部分:氣體比重瓶
  16. Determination of solid state density - part 3 : gas buoyancy method

    固體密度的測定:第3部分:氣體浮力法
  17. A model of the sic pn junctions irradiated by neutron is presented. the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically

    在輻照的電離效應方面，研究了輻照在sicmos氧化層中引入的陷阱電荷對mos溝道反型層遷移率的影響。
  18. Determination of solid state density - part 1 : principles

    固體密度的測定.第1部分:原理
  19. Self - assembled semiconductor quantum dots are widely used in fabrications of nano - electronic devices, since they have few defects, mature growth technology and electronic state density of 6 function

    自組裝半導體量子點由於缺陷少、生長技術成熟和具有函數形式的能態密度等優點而被廣泛用於納米電子器件制備中。
  20. The effect of interface state charges on the threshold voltage, drain current, transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution

    建立界面態密度的指數分佈模型，用數值方法較為詳細的分析了界面態電荷對n溝mosfet器件閾值，漏電流，跨導和場效應遷移率的影響。
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