strained lattice 中文意思是什麼
strained lattice
解釋
應變晶格-
The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example, batio _ 3 / srtio _ 3 with a lattice mismatch of 2. 18 % ), the growth mode of thin films is layer - by - layer, and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ), the strain relaxation process can be explained by theory of coherent strained islands
氧化物薄膜異質外延應變行為的理論預測和解釋。對于晶格失配較小的外延體系（如batio3 / srtio _ 3 2 . 18 % ） ，薄膜以層狀方式進行生長，臨界厚度和應變釋放過程可以用經典的matthews - blakeslee公式進行預測;對于晶格失配較大的體系（如mgo / srtio _ 3 8 % ） ，薄膜以島狀方式進行生長，應變釋放過程可以由彈性應變島的理論體系進行解釋。 -
Due to the change in lattice constant and the distortion of energy band, strained si exhibits great mobility enhancement compared with the conventional si material, and it is the critical reason for the wide application of strained si mosfets
由於晶格常數的改變，應變硅中載流子的遷移率高於普通硅材料，這是應變硅mosfet性能提高的根本原因。 -
As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped
眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。 -
Epitaxy : concerns / constraints ? lattice - matched systems ; strained layers ( pseudomorphic ) ? limits of thickness ; impact of strain on bands, properties
7磊晶：關鍵與限制-晶格匹配之材料系統；應變層（假晶） -厚度上限；應力對能帶的影響，特性。
分享友人